Patents by Inventor Frank Umbach
Frank Umbach has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230048908Abstract: A method of producing a power semiconductor device includes: providing a semiconductor body; forming, at the semiconductor body, a polycrystalline semiconductor region; forming, at the polycrystalline semiconductor region, an amorphous sublayer; subjecting the amorphous sublayer to a re-crystallization processing step to form a re-crystallized sublayer; and forming a metal layer at the re-crystallized sublayer.Type: ApplicationFiled: August 5, 2022Publication date: February 16, 2023Inventors: Damiano Cassese, Andreas Korzenietz, Holger Schulze, Frank Umbach
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Patent number: 11251266Abstract: A power semiconductor device includes a semiconductor body having a drift region of a first conductivity type inside an active region. An edge termination region includes: a guard region of a second conductivity type at a front side of the semiconductor body and surrounding the active region; and a field plate trench structure extending vertically into the body from the front side and at least partially filled with a conductive material that is electrically connected with the guard region and insulated from the body external of the guard region. A first portion of the field plate trench structure at least partially extends into the guard region and is at least partially arranged below a metal layer arranged at the front side. A second portion of the field plate trench structure extends outside of the guard region and surrounds the active area, the metal layer not extending above the second portion.Type: GrantFiled: February 14, 2020Date of Patent: February 15, 2022Assignee: Infineon Technologies AGInventors: Philip Christoph Brandt, Manfred Pfaffenlehner, Frank Dieter Pfirsch, Francisco Javier Santos Rodriguez, Steffen Schmidt, Frank Umbach
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Patent number: 10957764Abstract: A semiconductor body includes first and second opposing surfaces, an edge extending in a vertical direction substantially perpendicular to the first surface, an active area, a peripheral area arranged in a horizontal direction substantially parallel to the first surface between the active area and edge, and a pn-junction extending from the active area into the peripheral area. In the peripheral area the semiconductor device further includes a first conductive region arranged next to the first surface, a second conductive region arranged next to the first surface, and arranged in the horizontal direction between the first conductive region and edge, and a passivation structure including a first portion at least partly covering the first conductive region, a second portion at least partly covering the second conductive region. The first portion has a different layer composition than the second portion and/or a thickness which differs from the thickness of the second portion.Type: GrantFiled: April 6, 2015Date of Patent: March 23, 2021Assignee: Infineon Technologies AGInventors: Franz Josef Niedernostheide, Manfred Pfaffenlehner, Hans-Joachim Schulze, Holger Schulze, Frank Umbach, Christoph Weiss
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Patent number: 10777506Abstract: According to an embodiment of a semiconductor device, the semiconductor devices includes a metal structure electrically connected to a silicon carbide semiconductor body and a metal adhesion and barrier structure between the metal structure and the silicon carbide semiconductor body. The metal adhesion and barrier structure includes a layer comprising titanium and tungsten.Type: GrantFiled: September 20, 2019Date of Patent: September 15, 2020Assignee: Infineon Technologies AGInventors: Frank Hille, Ravi Keshav Joshi, Michael Fugger, Oliver Humbel, Thomas Laska, Matthias Müller, Roman Roth, Carsten Schaeffer, Hans-Joachim Schulze, Holger Schulze, Juergen Steinbrenner, Frank Umbach
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Publication number: 20200266269Abstract: A power semiconductor device includes a semiconductor body having a drift region of a first conductivity type inside an active region. An edge termination region includes: a guard region of a second conductivity type at a front side of the semiconductor body and surrounding the active region; and a field plate trench structure extending vertically into the body from the front side and at least partially filled with a conductive material that is electrically connected with the guard region and insulated from the body external of the guard region. A first portion of the field plate trench structure at least partially extends into the guard region and is at least partially arranged below a metal layer arranged at the front side. A second portion of the field plate trench structure extends outside of the guard region and surrounds the active area, the metal layer not extending above the second portion.Type: ApplicationFiled: February 14, 2020Publication date: August 20, 2020Inventors: Philip Christoph Brandt, Manfred Pfaffenlehner, Frank Dieter Pfirsch, Francisco Javier Santos Rodriguez, Steffen Schmidt, Frank Umbach
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Publication number: 20200013722Abstract: According to an embodiment of a semiconductor device, the semiconductor devices includes a metal structure electrically connected to a silicon carbide semiconductor body and a metal adhesion and barrier structure between the metal structure and the silicon carbide semiconductor body. The metal adhesion and barrier structure includes a layer comprising titanium and tungsten.Type: ApplicationFiled: September 20, 2019Publication date: January 9, 2020Inventors: Frank Hille, Ravi Keshav Joshi, Michael Fugger, Oliver Humbel, Thomas Laska, Matthias Müller, Roman Roth, Carsten Schaeffer, Hans-Joachim Schulze, Holger Schulze, Juergen Steinbrenner, Frank Umbach
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Patent number: 10475743Abstract: According to an embodiment of a semiconductor device, the semiconductor devices includes a metal structure electrically connected to a semiconductor body and a metal adhesion and barrier structure between the metal structure and the semiconductor body. The metal adhesion and barrier structure includes a first layer having titanium and tungsten, and a second layer having titanium, tungsten, and nitrogen on the first layer having titanium and tungsten.Type: GrantFiled: March 14, 2017Date of Patent: November 12, 2019Assignee: Infineon Technologies AGInventors: Frank Hille, Ravi Keshav Joshi, Michael Fugger, Oliver Humbel, Thomas Laska, Matthias Mueller, Roman Roth, Carsten Schaeffer, Hans-Joachim Schulze, Holger Schulze, Juergen Steinbrenner, Frank Umbach
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Patent number: 10224237Abstract: A method for forming a semiconductor device includes forming an insulating material layer above a semiconductor substrate and modifying at least a portion of a surface of the insulating material layer after forming the insulating material layer. Further, the method includes forming an electrical conductive structure on at least the portion of the surface of the insulating material layer after modifying at least the portion of the surface of the insulating material layer.Type: GrantFiled: May 23, 2017Date of Patent: March 5, 2019Assignee: Infineon Technologies AGInventors: Roman Roth, Frank Umbach
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Publication number: 20170345711Abstract: A method for forming a semiconductor device includes forming an insulating material layer above a semiconductor substrate and modifying at least a portion of a surface of the insulating material layer after forming the insulating material layer. Further, the method includes forming an electrical conductive structure on at least the portion of the surface of the insulating material layer after modifying at least the portion of the surface of the insulating material layer.Type: ApplicationFiled: May 23, 2017Publication date: November 30, 2017Inventors: Roman Roth, Frank Umbach
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Publication number: 20170271268Abstract: According to an embodiment of a semiconductor device, the semiconductor devices includes a metal structure electrically connected to a semiconductor body and a metal adhesion and barrier structure between the metal structure and the semiconductor body. The metal adhesion and barrier structure includes a first layer having titanium and tungsten, and a second layer having titanium, tungsten, and nitrogen on the first layer having titanium and tungsten.Type: ApplicationFiled: March 14, 2017Publication date: September 21, 2017Inventors: Frank Hille, Ravi Keshav Joshi, Michael Fugger, Oliver Humbel, Thomas Laska, Matthias Mueller, Roman Roth, Carsten Schaeffer, Hans-Joachim Schulze, Holger Schulze, Juergen Steinbrenner, Frank Umbach
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Patent number: 9741639Abstract: A semiconductor chip includes a semiconductor body and a chip metallization applied on the semiconductor body. The chip metallization has an underside facing away from the semiconductor body. The chip further includes a layer stack applied to the underside of the chip metallization and having a number N1?1 or N1?2 of first partial layers and a number N2?2 of second partial layers. The first partial layers and the second partial layers are arranged alternately and successively such that at least one of the second partial layers is arranged between the first partial layers of each first pair of the first partial layers and such that at least one of the first partial layers is arranged between the second partial layers of each second pair of the second partial layers.Type: GrantFiled: September 16, 2013Date of Patent: August 22, 2017Assignee: Infineon Technologies AGInventors: Frank Umbach, Niels Oeschler, Kirill Trunov
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Patent number: 9419374Abstract: A plug connector for providing an electrical connection with a counter piece, the plug connector including a housing in which contacts that are supported in a front portion of the housing with respect to a plug in direction are connectable with a cable which is run out of a rear portion of the housing with respect to the plug in direction; a securing sleeve which is supported on the housing rotationally movable in a circumferential direction and which provides a securing screw connection for a plug connection between the connector and the counter piece, wherein an axial section of the housing and an axial section of the securing sleeve enter a form locking engagement at least at an end of a movement of the securing screw connection wherein the form locking engagement provides vibration protection for the plug connection; and an elastic seal which secures the plug connection against contaminants.Type: GrantFiled: July 21, 2015Date of Patent: August 16, 2016Assignee: Lumberg Connect GmbHInventor: Frank Umbach
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Patent number: 9397022Abstract: A semiconductor device includes a semiconductor substrate having a first side, at least a first area formed in the semiconductor substrate, at least a second area formed in the semiconductor substrate, a first metal layer structure having at least a first metal portion in the first area and at least a second metal portion in the second area, and a second metal layer structure on and in ohmic contact with the first metal portion in the first area while leaving the second metal portion of the first metal layer structure in the second area uncovered. The second metal layer structure and the first metal portion of the first metal layer structure form together a common metallization structure on the first side of the semiconductor substrate in the first area.Type: GrantFiled: October 12, 2015Date of Patent: July 19, 2016Assignee: Infineon Technologies Austria AGInventors: Roman Roth, Frank Umbach
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Publication number: 20160134050Abstract: A plug connector for providing an electrical connection with a counter piece, the plug connector including a housing in which contacts that are supported in a front portion of the housing with respect to a plug in direction are connectable with a cable which is run out of a rear portion of the housing with respect to the plug in direction; a securing sleeve which is supported on the housing rotationally movable in a circumferential direction and which provides a securing screw connection for a plug connection between the connector and the counter piece, wherein an axial section of the housing and an axial section of the securing sleeve enter a form locking engagement at least at an end of a movement of the securing screw connection wherein the form locking engagement provides vibration protection for the plug connection; and an elastic seal which secures the plug connection against contaminants.Type: ApplicationFiled: July 21, 2015Publication date: May 12, 2016Inventor: Frank Umbach
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Patent number: 9281360Abstract: A semiconductor device has a semiconductor body including opposing bottom and top sides, a surface surrounding the semiconductor body, an active semiconductor region formed in the semiconductor body, an edge region surrounding the active semiconductor region, a first semiconductor zone of a first conduction type formed in the edge region, an edge termination structure formed in the edge region at the top side, and a shielding structure arranged on that side of the edge termination structure facing away from the bottom side. The shielding structure has a number of N1?2 first segments and a number of N2?1 second segments. Each of the first segments is electrically connected to each of the other first segments and to each of the second segments, and each of the second segments has an electric resistivity higher than an electric resistivity of each of the first segments.Type: GrantFiled: August 12, 2014Date of Patent: March 8, 2016Assignee: Infineon Technologies AGInventors: Karin Buchholz, Matteo Dainese, Elmar Falck, Hans-Joachim Schulze, Gerhard Schmidt, Frank Umbach
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Publication number: 20160049463Abstract: A semiconductor device has a semiconductor body including opposing bottom and top sides, a surface surrounding the semiconductor body, an active semiconductor region formed in the semiconductor body, an edge region surrounding the active semiconductor region, a first semiconductor zone of a first conduction type formed in the edge region, an edge termination structure formed in the edge region at the top side, and a shielding structure arranged on that side of the edge termination structure facing away from the bottom side. The shielding structure has a number of N1?2 first segments and a number of N2?1 second segments. Each of the first segments is electrically connected to each of the other first segments and to each of the second segments, and each of the second segments has an electric resistivity higher than an electric resistivity of each of the first segments.Type: ApplicationFiled: August 12, 2014Publication date: February 18, 2016Inventors: Karin Buchholz, Matteo Dainese, Elmar Falck, Hans-Joachim Schulze, Gerhard Schmidt, Frank Umbach
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Publication number: 20160043013Abstract: A semiconductor device includes a semiconductor substrate having a first side, at least a first area formed in the semiconductor substrate, at least a second area formed in the semiconductor substrate, a first metal layer structure having at least a first metal portion in the first area and at least a second metal portion in the second area, and a second metal layer structure on and in ohmic contact with the first metal portion in the first area while leaving the second metal portion of the first metal layer structure in the second area uncovered. The second metal layer structure and the first metal portion of the first metal layer structure form together a common metallization structure on the first side of the semiconductor substrate in the first area.Type: ApplicationFiled: October 12, 2015Publication date: February 11, 2016Inventors: Roman Roth, Frank Umbach
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Patent number: 9196560Abstract: A method for forming a semiconductor device includes providing a semiconductor substrate having a first area and a second area. A first metal layer structure is formed which includes at least a first metal portion in the first area and a second metal portion in the second area. A plating mask is formed on the first metal layer structure to cover the second metal portion, and a second metal layer structure is plated on and in ohmic contact with the first metal portion of the first metal layer structure.Type: GrantFiled: October 31, 2013Date of Patent: November 24, 2015Assignee: Infineon Technologies Austria AGInventors: Roman Roth, Frank Umbach
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Publication number: 20150303260Abstract: A semiconductor body includes first and second opposing surfaces, an edge extending in a vertical direction substantially perpendicular to the first surface, an active area, a peripheral area arranged in a horizontal direction substantially parallel to the first surface between the active area and edge, and a pn-junction extending from the active area into the peripheral area. In the peripheral area the semiconductor device further includes a first conductive region arranged next to the first surface, a second conductive region arranged next to the first surface, and arranged in the horizontal direction between the first conductive region and edge, and a passivation structure including a first portion at least partly covering the first conductive region, a second portion at least partly covering the second conductive region. The first portion has a different layer composition than the second portion and/or a thickness which differs from the thickness of the second portion.Type: ApplicationFiled: April 6, 2015Publication date: October 22, 2015Inventors: Franz Josef Niedernostheide, Manfred Pfaffenlehner, Hans-Joachim Schulze, Holger Schulze, Frank Umbach, Christoph Weiss
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Publication number: 20150115391Abstract: A method for forming a semiconductor device includes providing a semiconductor substrate having a first area and a second area. A first metal layer structure is formed which includes at least a first metal portion in the first area and a second metal portion in the second area. A plating mask is formed on the first metal layer structure to cover the second metal portion, and a second metal layer structure is plated on and in ohmic contact with the first metal portion of the first metal layer structure.Type: ApplicationFiled: October 31, 2013Publication date: April 30, 2015Inventors: Roman Roth, Frank Umbach