Abstract: An adjusting mechanism includes a first sub-assembly, a bolt disposed on the first sub-assembly and a second sub-assembly. The bolt is configured to receive a force in a radial direction relative to an axis of the bolt. The second sub-assembly is mounted so as to be rotatable relative to the first sub-assembly by means of the bolt. The rotatability of the second sub-assembly relative to the first sub-assembly is configured to be reduced by a positive connection created using plastic deformation between the bolt and at least one of the first sub-assembly and the second sub-assembly.

Abstract: Methods of fabricating semiconductor devices are disclosed. In a preferred embodiment, a method of fabricating a semiconductor device includes providing a workpiece including a plurality of active area regions defined therein, and forming at least one trench in the workpiece between at least two of the plurality of active area regions. A first insulating material is deposited over the plurality of active area regions and the at least one trench, partially filling the at least one trench with the first insulating material and forming peaks of the first insulating material over the plurality of active area regions. A masking material is formed over the first insulating material in the at least one trench, leaving the peaks of the first insulating material over the plurality of active area regions completely exposed. At least the peaks of the first insulating material are removed from over the plurality of active area regions.

Abstract: Methods and devices are provided for two-way authentication. In one example, a method prompts a user for an account number and a PIN. Upon authentication of the account number and the PIN, an e-mail having a link to a new session is sent to the user. If the account number and the PIN were authenticated, a custom background preselected by the user is presented in the new session and a password is requested. Use of the custom background preselected by the user may help the user authenticate the computer system to which he is attempting to gain entry. Upon authentication of the password, entry to a computer system is permitted. To provide optional, enhanced anti-phishing capability, if the account number and the PIN were not authenticated, the an indication may be made that the e-mail message is being sent.

Abstract: Methods of fabricating semiconductor devices are disclosed. In a preferred embodiment, a method of fabricating a semiconductor device includes providing a workpiece including a plurality of active area regions defined therein, and forming at least one trench in the workpiece between at least two of the plurality of active area regions. A first insulating material is deposited over the plurality of active area regions and the at least one trench, partially filling the at least one trench with the first insulating material and forming peaks of the first insulating material over the plurality of active area regions. A masking material is formed over the first insulating material in the at least one trench, leaving the peaks of the first insulating material over the plurality of active area regions completely exposed. At least the peaks of the first insulating material are removed from over the plurality of active area regions.

Abstract: Cleaning systems and methods are provided. A preferred embodiment comprises a method of cleaning that includes providing a device and disposing a cleaning fluid on the device. The cleaning fluid includes a first component saturated with a second component. The first component comprises a liquid, and the second component comprises a material that is releasable from the cleaning fluid as a gas. The second component is caused to be released from the cleaning fluid while the cleaning fluid is disposed on the device.

Abstract: Embodiments of the invention provide a semiconductor device having dielectric material and its method of manufacture. A manufacturing method comprises forming a layer of silicon over a substrate, forming an opening through the layer of silicon, filling the opening with a conductor; and anodically etching the layer of silicon so as to form porous silicon. Embodiments may further include passivating the porous silicon such as by treating its surface with an organometallic compound. Other embodiments of the invention provide a semiconductor device comprising a layer comprising functional devices; and an interconnect structure over the layer, wherein the interconnect structure comprises a porous silicon dielectric. In an embodiment of the invention, the interconnect structure comprises a dual damascene interconnect structure. Other embodiments may include a passivation step after the step of oxidizing the porous silicon.

Abstract: A method of repairing damaged low-k dielectric materials is disclosed. Plasma-based processes, which are commonly used in semiconductor device manufacturing, frequently damage carbon-containing, low-k dielectric materials. Upon exposure to moisture, the damaged dielectric material may form silanol groups. In preferred embodiments, a two-step approach converts the silanol to a suitable organic group. The first step includes using a halogenating reagent to convert the silanol to a silicon halide. The second step includes using a derivatization reagent, preferably an organometallic compound, to replace the halide with the suitable organic group. In a preferred embodiment, the halogenating agent includes thionyl chloride and the organometallic compound includes an alkyllithium, preferably methyllithium. In another preferred embodiment, the organometallic compound comprises a Grignard reagent.

Abstract: Test system for testing integrated chips and an adapter element for a test system.

Abstract: In preferred embodiments, a polydentate pore-sealing ligand is used to seal or repair pores damaged by plasma processing. The polydentate ligand includes bidentate ligands corresponding to the general formula X—CH2—(CH2)n—CH2—X or X—Si(CH3)2—(CH2)n—Si(CH3)2—X. The polydentate ligand also includes tridendate ligands corresponding to the general formula X—CH2—(CH2)m(CXH)(CH2)o—CH2—X or X—Si(CH3)2—(CH2)m(CXH)(CH2)o—Si(CH3)2—X. Alternative embodiments may include single or multiply branched polydentate ligands. Other embodiments include ligands that are cross-linked after attachment to the dielectric. Still other embodiments include a derivatization reaction wherein silanol groups formed by plasma damage are removed and favorable dielectric properties are restored.

Abstract: Compounds of formula I in which R has a meaning as indicated in claim 1, or one of their optical isomers or pharmaceutically acceptable salts, used for the treatment of extrapyramidal movement disorders and/or adverse effects in extrapyramidal movement disorders and/or for the treatment of extrapyramidal symptoms (EPS) induced by neuroleptics.

Abstract: A method of improving the effectiveness of semiconductor cleaning solvents is provided. Insoluble gas bubbles, typically air, hinder wet chemical cleaning methods. Preferred embodiments include purging a first, insoluble gas from the cleaning system and replacing it with a second, soluble gas. After replacing the first gas with the second gas, the wafer is rinsed in the cleaning solvent. Any gas bubbles trapped within narrow, recessed features during cleaning rapidly dissolve due to the second gas's solubility. Temperature adjustments during the process may further enhance cleaning.

Abstract: A method of manufacturing cleaning solvents is provided. The method includes selecting a small plurality of test solvents from a large plurality of perspective solvents. The equilibrium composition of a multi-component solution is preferably described by the Hansen solubility model. A small plurality of test solvents is applied to solute samples and the degree of dissolution or swelling recorded. Based on the degree of dissolution or swelling, at least one solvent is selected from the large plurality of perspective solvents based on the Hansen parameters. In other embodiments, the three-parameter Hansen solubility model includes additional parameters that enable more accurate solubility predictions. In one embodiment, an additional parameter accounts for oxidizing solution components. In an alternative embodiment, an additional parameter accounts for the acidic/basic property of the solution. Still another embodiment accounts for temperature effects.

Abstract: In preferred embodiments, a polydentate pore-sealing ligand is used to seal or repair pores damaged by plasma processing. The polydentate ligand includes bidentate ligands corresponding to the general formula X—CH2—(CH2)n—CH2—X or X—Si(CH3)2—(CH2)n—Si(CH3)2—X. The polydentate ligand also includes tridendate ligands corresponding to the general formula X—CH2—(CH2)m(CXH)(CH2)o—CH2—X or X—Si(CH3)2—(CH2)m(CXH)(CH2)o—Si(CH3)2—X. Alternative embodiments may include single or multiply branched polydentate ligands. Other embodiments include ligands that are cross-linked after attachment to the dielectric. Still other embodiments include a derivatization reaction wherein silanol groups formed by plasma damage are removed and favorable dielectric properties are restored.

Abstract: A method of repairing damaged low-k dielectric materials is disclosed. Plasma-based processes, which are commonly used in semiconductor device manufacturing, frequently damage carbon-containing, low-k dielectric materials. Upon exposure to moisture, the damaged dielectric material may form silanol groups. In preferred embodiments, a two-step approach converts the silanol to a suitable organic group. The first step includes using a halogenating reagent to convert the silanol to a silicon halide. The second step includes using a derivatization reagent, preferably an organometallic compound, to replace the halide with the suitable organic group. In a preferred embodiment, the halogenating agent includes thionyl chloride and the organometallic compound includes an alkyllithium, preferably methyllithium. In another preferred embodiment, the organometallic compound comprises a Grignard reagent.

Abstract: The instant invention relates to the use of compounds that are effective as selective opiate receptor modulators for the manufacture of pharmaceuticals for the diagnosis and/or the treatment of disorders, said disorders being selected from eating disorders and digestive disorders, especially psychogenic eating disorders, for the manufacture of a pharmaceutical effective for modulating, the gastrointestinal tonus, and to pharmaceutical composition, comprising one or more of said modulator compounds and one or more compounds that are effective as appetite depressant.

Abstract: A combination direct/indirect liquid heating heater comprises a tower, a cold water inlet conduit causing water to fall in said tower, a hot water reservoir in communication with said tower, a gas burner, a hot gas inlet manifold encased in the reservoir and, by means of a vertical section, directing the gas into the tower. The hot gas manifold vertical section is capped by a cap impeding water flow into the manifold. Also, the vertical section comprises a baffle impeding gas flow from the tower into the reservoir.

Abstract: Test system for testing integrated chips and an adapter element for a test system.

Abstract: (R/S)-(±)-2-[5-(4-fluorophenyl)-3-pyridylmethylaminomethyl]-chromane or a physiologically acceptable salt thereof and/or (S)-(+)-2-[5-(4-fluorophenyl)-3-pyridylmethylaminomethyl]-chromane or a physiologically acceptable salt thereof are used for the manufacture of a medicament for the treatment of extrapyramidal movement disorders and/or adverse effects in extrapyramidal movement disorders.

Abstract: The invention relates to the use of a medicament n-methyl-N-[(1S)-1-phenyl-2((3S)-3-hydroxypyrrolidin-1-yl)ethyl]-2,2-diphenyl-acetamaide or one of the pharmacologically acceptable salts thereof for the production of medicament formulations for the treatment of bladder diseases, particularly irritable bladder syndrome and the pains associated therewith.

Abstract: A method for releasable contact-connection of a plurality of integrated semiconductor modules on a wafer, each of which having a plurality of interconnected supply voltage terminals, includes the steps of providing a contacting card for applying external electrical signals to the semiconductor modules with contact elements for releasable electrical connection to terminal pads of the semiconductor modules, aligning the contacting card with the wafer, producing a releasable contact between terminal pads of the plurality of semiconductor modules and the contact elements of the contacting card, checking the contact quality for each of the semiconductor modules by applying a voltage to at least one of the supply voltage terminals of the semiconductor module through the contacting card, measuring the voltage present at a further one of the supply voltage terminals through the contacting card, and using the measurement result to assess whether or not the semiconductor module has correct contact.