Abstract: An apparatus for rapid thermal processing of silicon wafers is provided. The apparatus may include a heating element, sensing element and a cooling element, all of which are positioned in opposing relation to a backside of a silicon wafer. A method of using the apparatus includes using the apparatus to rapidly heat a wafer, apply desired processing assists, and rapidly cool the wafer. The apparatus may also include an array of sensing elements which are interposed between heating elements. The sensing elements may be a combination of absolute and relative sensors. The array permits accurate zonal control of the heating elements and prevents cross talk between the heaters. The apparatus may be used to monitor the temperature at various points across a wafer and to control the associated heating elements in response to the monitoring step. The apparatus may also include a high speed rotating support for the wafer.