Abstract: An edge protection process for semiconductor device fabrication includes forming a protective layer on the circumferential edge region of a semiconductor substrate. The semiconductor substrate is placed in a plasma atmosphere and trench structures, such as deep trenches and shallow trench isolation structures are etched in the substrate. The protective layer substantially prevents the etching of the circumferential edge region, such that the formation of black silicon is substantially minimized during the etching process.

Abstract: An edge protection process for semiconductor device fabrication includes forming a protective layer on the circumferential edge region of a semiconductor substrate. The semiconductor substrate is placed in a plasma atmosphere and trench structures, such as deep trenches and shallow trench isolation structures are etched in the substrate. The protective layer substantially prevents the etching of the circumferential edge region, such that the formation of black silicon is substantially minimized during the etching process.

Abstract: A chemical mechanical polishing method and apparatus are introduced that reduce embedded particles during CMP processing. Throughout the CMP process, the wafer-carrier and the polish platen turn or rotate in the same direction. This enables particles to become embedded in the oxide or other film surface. In the disclosed process, during a final polish step, the wafer carrier or polish platen is turned or rotated in the opposite direction. Embedded particles are then pulled out of the oxide or film, creating a much cleaner wafer. This increases manufacturing yield and decreases manufacturing cost while introducing one additional step and a minor modification to conventional equipment.