Abstract: An optoelectronic device including an integrated circuit including light-emitting diodes, thin film transistors, and a stack of electrically-insulating layers, said stack being located between the light-emitting diodes and the transistors, said stack further including conductive elements, between and through said insulating layers, said conductive elements connecting at least some of the transistors to the light-emitting diodes.

Abstract: A method for protecting optoelectronic devices against electrostatic discharges. Each optoelectronic device includes an electronic circuit including at least one electronic component and one optoelectronic circuit bonded to the electronic circuit and including at last one optoelectronic component from among a light-emitting diode or a photodiode. The method includes forming of first and second wafers, one of the first or second wafer includes a plurality of copies of the electronic circuit and the other one of the first or second wafer including a plurality of copies of the optoelectronic circuit, the bonding of the first wafer to a support, the bonding of the second wafer to the first wafer, and the separation of the electronic devices from one another, wherein the first wafer and/or the second wafer comprises at least one system for protecting optoelectronic devices against electrostatic discharges.

Abstract: A method for manufacturing an electronic device including a transfer phase a a step E1 of providing a substrate towards a receiving substrate, step E2 of providing a transfer device, a step E3 including adjusting a physical parameter, a set-up step E4, a step E5 including adjusting the physical parameter so that the value of the physical parameter is included within a second range of values, a step E7 including depositing an active element in which the physical parameter allows placing the material in a first state to impart a detachment between the active element and the housing in which the active element has been inserted at step E4, step E7 being carried out so that the detachment causes setting of a portion of the active element in contact with the receiving substrate.

Abstract: An optoelectronic device having a set of pixels wherein each pixel has a sub-pixel capable of emitting a primary light beam, a set of pixels each pixel being adjacent to a pixel wherein each secondary pixel has at least one secondary sub-pixel capable of emitting a secondary light beam, a set of optical systems arranged so as to be able to cover an entire pixel belonging to one of the sets and at least part of the sub-pixels of at least one of the adjacent pixels belonging to the other set, the number of pixels being greater than twice the number of optical systems. At least one movement mechanism applies a relative movement between the set and the sets according to a predetermined sequence.

Abstract: A method for manufacturing an optoelectronic device includes providing a support supporting a plurality of three-dimensional semiconductor structures, forming a sacrificial portion under a first set of 3D structures of the plurality of three-dimensional semiconductor structures, forming a barrier portion around the sacrificial portion, said barrier portion having a basal wall extending under the sacrificial portion, and a lateral wall extending at the edge of the sacrificial portion, forming an access trench up to the sacrificial portion, the access trench extending continuously along the lateral wall of the barrier portion, etching the sacrificial portion from the access trench, and removing the first set of 3D structures.

Abstract: An optoelectronic device including an optoelectronic circuit including light-emitting diodes, thin-film transistors, and a stack of electrically-insulating layers, said stack being located between the light-emitting diodes, and the transistors stack further including conductive elements, between and through the insulating layers, the conductive elements connecting at least some of the transistors to the light-emitting diodes The device further includes a support having a surface, the support being flexible and/or the surface being curved and non-planar, the optoelectronic circuit being connected to the surface on the side of the thin-film transistors.

Abstract: Disclosed is a method for manufacturing a set of light emitters each including a light emitting structure and an electrical contact, the method including the steps of:—providing a wafer carrying a set of light emitting structures, each emitting structure being configured to emit a first radiation when an electric current flows through the emitting structure, and—manufacturing, for each emitting structure, an electric contact, the contact being electrically insulated from each other. The manufacturing includes:—forming a first set of at least two first contacts and at least one conductor, the contact of the first set being electrically connected to each other first contact of the one or the conductor,—injecting, for each contact belonging to the first set, a electric current through the contact and the corresponding emitting structure, and—observing a radiation emitted in response to the injection.

Abstract: A method of protecting optoelectronic devices against electrostatic discharges, each optoelectronic device comprising an optoelectronic circuit comprising at least one optoelectronic component from among a light-emitting diode or a photodiode.

Abstract: A method of manufacturing an optoelectronic device including assemblies of light-emitting diodes (LED) having first and second assemblies and first blocks made of a first photoluminescent material, each covering one of the first assemblies. The method includes the forming of a layer covering the first and second assemblies, the delimiting of first openings in the layer to expose the first assemblies, the filling of the first openings with the first material, and the performing of a chemical-mechanical polishing to delimit the first blocks.

Abstract: An optoelectronic device including at least first and second light-emitting diodes, each including a first P-type doped semiconductor portion and a second N-type doped semiconductor portion, an active area including multiple quantum wells between the first and second semiconductor portions, a conductive layer covering the lateral walls of the active area and of at least a portion of the first semiconductor portion, and an insulating layer interposed between the lateral walls of the active area and of at least a portion of the conductive layer. The device includes means for controlling the conductive layer of the first light-emitting diode independently from the conductive layer of the second light-emitting diode.

Abstract: An optoelectronic device having a set of pixels wherein each pixel has a sub-pixel capable of emitting a primary light beam, a set of pixels each pixel being adjacent to a pixel wherein each secondary pixel has at least one secondary sub-pixel capable of emitting a secondary light beam, a set of optical systems arranged so as to be able to cover an entire pixel belonging to one of the sets and at least part of the sub-pixels of at least one of the adjacent pixels belonging to the other set, the number of pixels being greater than twice the number of optical systems. At least one movement mechanism applies a relative movement between the set and the sets according to a predetermined sequence.

Abstract: An optoelectronic device includes at least one light-emitting diode having a three-dimensional shape having a height along a longitudinal axis and having a first longitudinal dimension measured along the longitudinal axis and at least a second transverse dimension corresponding to a dimension of the three-dimensional shape measured perpendicular to the longitudinal axis. The first longitudinal dimension and the second transverse dimension are each less than or equal to substantially 20 ?m. The optoelectronic device has at least one optical lens capable of transforming the light rays emitted by the light-emitting diode which pass through the optical lens.

Abstract: An optoelectronic device includes a number of pixels, with each pixel including a lighting mechanism having at least one light-emitting diode capable of emitting an initial light beam, a light-conversion module having a plurality of conversion pads including at least one primary conversion pad and at least one secondary conversion pad. Each pixel includes a light-adjustment system configured to control at least one element chosen from a relative position between the lighting mechanism and the light-conversion module and the initial light beam. The action of the light-adjustment system is adapted so that the primary conversion pad and the secondary conversion pad emit a first light beam and a second light beam respectively, from the initial light beam, simultaneously or alternately in a predetermined sequence.

Abstract: An optoelectronic device including an integrated circuit including light-emitting diodes, thin film transistors, and a stack of electrically-insulating layers, said stack being located between the light-emitting diodes and the transistors, said stack further including conductive elements, between and through said insulating layers, said conductive elements connecting at least some of the transistors to the light-emitting diodes.

Abstract: The invention relates to charge-coupled TDI image sensors for the observation of one and the same image strip by multiple rows of pixels in succession with summation of the electric charge generated by an image point, for a row duration (TL ), in the pixels of the same rank of the various rows. According to the invention, the pixels are subdivided, in the direction of movement, into at least two adjacent portions (SUBai,j, SUBbi,j), each portion comprising at least one charge storage area that is independent of the storage areas of the other portion while allowing a transfer of charge from the first portion to the second, one of the portions (SUBai,j) being masked against light and the other portion (SUBbi,j) not being masked. The unmasked portion comprises a charge removal structure which is activated at a variable moment in time defining a start of actual integration that is independent of the start of a period of observing the image strip.

Abstract: In an active pixel sensor comprising a photodiode Dp, a memory node MN and a readout node SN, the memory node being provided to contain the charge generated by the photodiode at the end of an integration period allowing an integration in global shutter mode and a correlated double sampling, it is envisaged to carry out, in each integration period, at least one transfer {circle around (2)} of charge from the photodiode to the memory node followed by clipping {circle around (3)} of the amount of charge contained in the memory node at an intermediate voltage t1 after the start of the integration period but before a last transfer of charge {circle around (4)} to the memory node at the end of the integration period. The pixels are subsequently read out, row by row, by correlated double sampling CDS.

Abstract: In a sensor comprising active pixels including a photodiode PHD, a memory node MN and a read-out node SN, the memory node being provided to hold the charge generated by the photodiode at the end of an integration period enabling integration in global-shutter mode and a correlated double sampling read-out, provision is made for the charge-storage capacity of the memory node to be at least N times higher than the charge-storage capacity of the photodiode (N being an integer higher than or equal to 2) and provision is made to carry out, in each integration and read-out cycle, during the integration duration Tint(i), N transfers Tri1, Tri2, Tri3 of charge from the photodiode to the memory node, the N transfers being equally distributed over the integration duration. The dynamic range of the sensor is improved under high light levels.

Abstract: In a sensor comprising active pixels including a photodiode PHD, a memory node MN and a read-out node SN, the memory node being provided to hold the charge generated by the photodiode at the end of an integration period enabling integration in global-shutter mode and a correlated double sampling read-out, provision is made for the charge-storage capacity of the memory node to be at least N times higher than the charge-storage capacity of the photodiode (N being an integer higher than or equal to 2) and provision is made to carry out, in each integration and read-out cycle, during the integration duration Tint(i), N transfers Tri1, Tri2, Tri3 of charge from the photodiode to the memory node, the N transfers being equally distributed over the integration duration. The dynamic range of the sensor is improved under high light levels.

Abstract: The invention relates to color-image sensors. To benefit both from a good luminance resolution and a color accuracy that is not excessively degraded by the sensitivity of silicon to near-infrared radiation, the invention proposes to produce a mosaic of pixels comprising colored pixels (R), (G), (B), coated with color filters, which are distributed in the matrix, with white pixels (T) not coated with color filters and which are distributed in the matrix. The colored pixels include photodiodes constructed differently from the photodiodes of the white pixels, the different construction being such that the photodiodes of the colored pixels have a lower sensitivity to infrared radiation than the photodiodes of the white pixels.

Abstract: The invention concerns active-pixel electronic image sensors. The pixel comprises a photodiode (PH) designed in a semiconductor active layer (12) and maintained at a nil reference potential, and above the active layer an anti-blooming gate (G5) adjacent on one side to the photodiode and on another side to an evacuation drain (22). The sensor comprises means for applying to the anti-blooming gate, during most of the duration of integration, a blocking potential creating beneath the gate a potential barrier of a first height, and, during a series of brief pulses over the duration of integration, an anti-blooming potential creating a potential barrier of a second height, lower than the first. The fact of only applying the anti-blooming voltage during the brief pulses reduces the dark noise induced by tunneling effect by the electric field between gate and photodiode.