Abstract: The present invention provides a method of calibrating an analytical tool. The method, in a illustrative embodiment, includes preparing a calibration standard having a known concentration of an element and obtaining a portion of the calibration standard with a focused beam, wherein the calibration standard is representative of the concentration. The portion of the calibration standard is then used to calibrate an analytical tool.

Abstract: The present invention provides a method of calibrating an analytical tool. The method, in a illustrative embodiment, includes determining a concentration of an element located within a known matrix, obtaining a calibration standard of the known matrix with a polishing process, the calibration standard being representative of the concentration, and obtaining a detection limit of an analytical tool with respect to the concentration. Furthermore, secondary ion mass spectrometry may be used to determine the concentration of the element within the known matrix.

Abstract: The present invention provides a method of testing an unknown sample with an analytical tool The method may include calibrating an analytical tool to a calibration standard having a known concentration of an element therein and obtained with a focused beam, thereby to achieve a calibrated analytical tool, determining an unknown concentration of the element within the unknown sample with the calibrated analytical tool, and correcting the unknown concentration with the calibration standard.

Abstract: A probe tip locator for, and method of, use in determining a location of a probe tip relative to the probe tip locator comprising sets of discrete location markers in which numbers and positions of the location markers in each of the sets are employable uniquely to identify corresponding specific locations on the probe tip locator, the sets being distributed about the probe tip locator to avoid unbalanced partial encroachments into both sides of a scanpath of the probe tip by location markers in sets normally adjacent the scanpath thereby to prevent an erroneous determination of location caused by unbalanced partial encroachments of the location markers into both sides of the scanpath as the probe tip traverses the scanpath.

Abstract: A method of preparing a monolithic structure for scanning electron microscope/energy dispersive spectroscopy (SEM/EDS) and a sample produced by way of the method. In one embodiment, the method includes: (1) aiming a focused ion beam at a location behind or beneath an area of interest in the monolithic structure and (2) employing the focused ion beam to remove at least a portion of an interaction volume of material beneath the area of interest. The area of interest preferably remains substantially intact for the spectroscopy.

Abstract: A method of detecting defects within a semiconductor device is disclosed. An ion beam is focused in predetermined directions onto an area of a semiconductor device that is believed to have a suspected defect. A portion of the semiconductor device is milled and forms a thin film specimen to be removed from the semiconductor device. The thin film specimen is removed from the semiconductor device and placed onto an insulated film mount. Electrical connection points are created on previously unexposed portions of the thin film specimen by depositing a line of conductive material using a focused ion beam. The surface of the thin film specimen is scanned with an electron beam in a scanning electron microscope and observed for contrast. Processing errors are determined and the lateral resolution is about the electron beam size.

Abstract: The present invention provides an apparatus and a method of manufacturing that apparatus. More specifically, to a method of manufacturing probes for a stylus nanoprofilometer having a non-circular probe tip geometry and a method of measurement of semiconductor wafer features using the same. In one embodiment, the probe comprises an upper portion couplable to the stylus nanoprofilometer and a probative portion coupled to the upper portion. The probative portion has a cross section that is substantially thinner than a cross section of the upper portion. The probative portion further has a terminus distal the upper portion and a reentrant angle from the terminus to the upper portion.

Abstract: A method for utilizing secondary ion mass spectrometry (SIMS) analysis allows for the accurate determination of alkali elements in insulator materials by controlling the penetration depth of an electron beam used for charge neutralization so as to minimize the movement of alkali elements in the insulator. The method can be employed in connection with both magnetic sector SIMS instruments and quadrupole SIMS instruments.

Abstract: A method for introducing a known concentration of at least one species of ions into the surface or near surface of a substrate can be employed as a calibration technique prior to subsequent surface or near surface measurement. The method involves the introduction of a removable layer onto the surface followed by ion implantation which is performed to provide a known concentration of implanted ion at the interface between the removable layer and the surface. Subsequent to removal of the removable layer, the surface can be subjected to determination of elemental concentrations at the surface or near surface levels by techniques such as total reflection x-ray fluorescence or secondary ion mass spectrometry.