Abstract: An integrated circuit device comprises an interface to transmit a first code, a strobe signal after a delay and data to a dynamic random access memory (DRAM). The first code indicates that data is to be written to the DRAM. The first code is registered by the DRAM on one or more edges of an external clock signal received by the DRAM. The strobe signal specifies one or more discrete points in time synchronous with the external clock signal at which the data is registered by the DRAM.

Abstract: A high-speed memory system is disclosed in which a single command effects control over either a single memory device or a plurality of memory devices depending on a present mode of operation. Such control may effect data transfer between the one or more memory devices and a memory controller, as well as operating state transitions or power mode transitions for the memory devices. Similarly, various configurations of relatively low bandwidth memory devices respond as a selectively controllable group to transmit or receive high bandwidth data.

Abstract: A method is described for providing a memory with a serial sequence of write enable signals that are offset in time with respect to respective data received by a plurality of data inputs of the memory. A memory is also described with an array for data storage, a plurality of data input pins, and a separate pin for receiving either additional data or a serial sequence of write enable signals applicable to data received by the plurality of data input pins. The additional data that the separate pin can receive includes, for example, error detection and correction (EDC) information. A method is also described for multiplexing write enable information and error detection and correction information.

Abstract: A memory module includes an array of N memory devices, each memory device having M data pins, where N is greater than M, and M and N are positive integers; and N bit lines traversing the array of N memory devices, such that each one of the N bit lines is connected to M of the N memory devices.

Abstract: A high-speed memory system is disclosed in which a single command effects control over either a single memory device or a plurality of memory devices depending on a present mode of operation. Such control may effect data transfer between the one or more memory devices and a memory controller, as well as operating state transitions or power mode transitions for the memory devices. Similarly, various configurations of relatively low bandwidth memory devices respond as a selectively controllable group to transmit or receive high bandwidth data.

Abstract: A high-speed memory system is disclosed in which a single command effects control over either a single memory device or a plurality of memory devices depending on a present mode of operation. Such control may effect data transfer between the one or more memory devices and a memory controller, as well as operating state transitions or power mode transitions for the memory devices. Similarly, various configurations of relatively low bandwidth memory devices respond as a selectively controllable group to transmit or receive high bandwidth data.

Abstract: A semiconductor memory device that includes an array of memory cells, the memory device operating synchronously with respect to an external clock signal. The memory device includes a set of interface terminals to receive a plurality of control signals which specify that the memory device receive a first set of data bits and a second set of data bits. The first set of data bits are received during a first half of a first clock cycle of the external clock signal. The second set of data bits are received during a second half of the first clock cycle of the external clock signal. In addition, the memory device includes a mask terminal to receive first and second mask bits during a second clock cycle of the external clock signal. The first clock cycle is temporally offset from the second clock cycle. The first mask bit is received during a first half of the second clock cycle, the first mask bit to indicate whether to write the first set of data bits to the array.

Abstract: A semiconductor memory device and a method of operation in the semiconductor memory device. The memory device receives an external clock signal and includes an array of memory cells. The method of operation of the memory device includes receiving, during a first half of a clock cycle of the external clock signal, a first data value and a first mask bit. The first mask bit indicates whether to write the first data value to the array. The method further includes receiving, during a second half of the clock cycle of the external clock signal, a second data value and a second mask bit. The second mask bit indicates whether to write the second data value to the array.

Abstract: A semiconductor memory device which includes a set of interface terminals to receive a plurality of control signals which specify that the memory device receive a first set of data bits and a second set of data bits. The plurality of control signals further specify that the memory device precharge sense amplifiers used in writing the first set of data bits to an array of memory cells, and precharge sense amplifiers used in writing the second set of data bits to the array of memory cells. The memory device further includes a mask terminal to receive a first mask bit during a first half of a clock cycle of an external clock signal, the first mask bit to indicate whether to write the first set of data bits to the array. The mask terminal further receives a second mask bit during a second half of the clock cycle of the external clock signal, the second mask bit to indicate whether to write the second set of data bits to the array.

Abstract: A method is described for providing a memory with a serial sequence of write enable signals that are offset in time with respect to respective data received by a plurality of data inputs of the memory. A memory is also described with an array for data storage, a plurality of data input pins, and a separate pin for receiving either additional data or a serial sequence of write enable signals applicable to data received by the plurality of data input pins. The additional data that the separate pin can receive includes, for example, error detection and correction (EDC) information. A method is also described for multiplexing write enable information and error detection and correction information.

Abstract: The present invention provides a high data bandwidth memory system capable of operating in non-chip-kill and chip-kill modes. In chip-kill mode, cycle multiplexing, bit multiplexing, and time and space multiplexing are used to read/write data and syndrome across a group of memory devices. Current command packet formats are adapted to communicate with the group of memory devices in chip-kill mode.

Abstract: A method is described for providing a memory with a serial sequence of write enable signals that are offset in time with respect to respective data received by a plurality of data inputs of the memory. A memory is also described with an array for data storage, a plurality of data input pins, and a separate pin for receiving either additional data or a serial sequence of write enable signals applicable to data received by the plurality of data input pins. The additional data that the separate pin can receive includes, for example, error detection and correction (EDC) information. A method is also described for multiplexing write enable information and error detection and correction information.

Abstract: A method is described for providing a memory with a serial sequence of write enable signals that are offset in time with respect to respective data received by a plurality of data inputs of the memory. A memory is also described with an array for data storage, a plurality of data input pins, and a separate pin for receiving either additional data or a serial sequence of write enable signals applicable to data received by the plurality of data input pins. The additional data that the separate pin can receive includes, for example, error detection and correction (EDC) information. A method is also described for multiplexing write enable information and error detection and correction information.

Abstract: A method is described for providing a memory with a serial sequence of write enable signals that are offset in time with respect to respective data received by a plurality of data inputs of the memory. A memory is also described with an array for data storage, a plurality of data input pins, and a separate pin for receiving either additional data or a serial sequence of write enable signals applicable to data received by the plurality of data input pins. The additional data that the separate pin can receive includes, for example, error detection and correction (EDC) information. A method is also described for multiplexing write enable information and error detection and correction information.

Abstract: A method is described for providing a memory with a serial sequence of write enable signals that are offset in time with respect to respective data received by a plurality of data inputs of the memory. A memory is also described with an array for data storage, a plurality of data input pins, and a separate pin for receiving either additional data or a serial sequence of write enable signals applicable to data received by the plurality of data input pins. The additional data that the separate pin can receive includes, for example, error detection and correction (EDC) information. A method is also described for multiplexing write enable information and error detection and correction information.

Abstract: A high speed bus system in which at least one master device, such as a processor and at least one DRAM slave device are coupled to the bus. An innovative packet format and device interface which utilizes a plurality of time and space saving features in order to decrease the die size of the device receiver and decrease the overall latency on the bus is provided. In the preferred embodiment the request packet is transmitted on ten multiplexed transmission lines, identified as BusCtl and BusData. The packet is transmitted over six sequential bus cycles, wherein during each bus cycle, a different portion of the packet is transmitted. The lower order address bits are moved ahead of the higher order address bits of the memory request. This enables the receiving device to process the memory request faster as the locality of the memory reference with respect to previous references can be immediately determined and page mode accesses on the DRAM can be initiated as quickly as possible.

Abstract: A high speed bus system in which at least one master device, such as a processor and at least one DRAM slave device are coupled to the bus. An innovative packet format and device interface which utilizes a plurality of time and space saving features in order to decrease the die size of the device receiver and decrease the overall latency on the bus is provided. In the preferred embodiment the request packet is transmitted on ten multiplexed transmission lines, identified as BusCtl and BusData ?8:0!. The packet is transmitted over six sequential bus cycles, wherein during each bus cycle, a different portion of the packet is transmitted. The lower order address bits are moved ahead of the higher order address bits of the memory request. This enables the receiving device to process the memory request faster as the locality of the memory reference with respect to previous references can be immediately determined and page mode accesses on the DRAM can be initiated as quickly as possible.

Abstract: A high speed bus system in which at least one master device, such as a processor and at least one DRAM slave device are coupled to the bus. An innovative packet format and device interface which utilizes a plurality of time and space saving features in order to decrease the die size of the device receiver and decrease the overall latency on the bus is provided. In the preferred embodiment the request packet is transmitted on ten multiplexed transmission lines, identified as BusCtl and BusData ?8:0!. The packet is transmitted over six sequential bus cycles, wherein during each bus cycle, a different portion of the packet is transmitted. The lower order address bits are moved ahead of the higher order address bits of the memory request. This enables the receiving device to process the memory request faster as the locality of the memory reference with respect to previous references can be immediately determined and page mode accesses on the DRAM can be initiated as quickly as possible.

Abstract: Circuitry for performing a memory block write is described. The memory block includes b block words, each block word having t block bytes. Each block byte has s bits of memory. Each block byte is associated with at least two associated mask value bits. A constant register has at least s.times.t bits of memory arranged as t constant bytes, each constant byte storing a constant value, each constant byte associated with one block of every block word. The block write circuitry includes control circuitry for selecting one of a normal write function and a block write function in accordance with a block write signal. When the block write function is selected, the control circuitry stores the associated constant value in every nonmasked block byte substantially simultaneously in accordance with a value of the associated mask value bits.

Abstract: A high speed bus system in which at least one master device, such as a processor and at least one DRAM slave device are coupled to the bus. An innovative packet format and device interface which utilizes a plurality of time and space saving features in order to decrease the die size of the device receiver and decrease the overall latency on the bus is provided. In the preferred embodiment the request packet is transmitted on ten multiplexed transmission lines, identified as BusCtl and BusData ?8:0!. The packet is transmitted over six sequential bus cycles, wherein during each bus cycle, a different portion of the packet is transmitted. The lower order address bits are moved ahead of the higher order address bits of the memory request. This enables the receiving device to process the memory request faster as the locality of the memory reference with respect to previous references can be immediately determined and page mode accesses on the DRAM can be initiated as quickly as possible.