Patents by Inventor Frederick B. Hidden

Frederick B. Hidden has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SPUTTERING TARGETS, SPUTTER REACTORS, METHODS OF FORMING CAST INGOTS, AND METHODS OF FORMING METALLIC ARTICLES
    Publication number: 20120273097
    Abstract: The invention encompasses a method of forming a metallic article. An ingot of metallic material is provided, and such ingot has an initial thickness. The ingot is subjected to hot forging. The product of the hot forging is quenched to fix an average grain size of less than 250 microns within the metallic material. The quenched material can be formed into a three dimensional physical vapor deposition target. The invention also includes a method of forming a cast ingot. In particular aspects, the cast ingot is a high-purity copper material. The invention also includes physical vapor deposition targets, and magnetron plasma sputter reactor assemblies.
    Type: Application
    Filed: July 11, 2012
    Publication date: November 1, 2012
    Applicant: HONEYWELL INTERNATIONAL INC.
    Inventors: Chi tse Wu, Wuwen Yi, Frederick B. Hidden, Susan D. Strothers
  • Sputtering targets, sputter reactors, methods of forming cast ingots, and methods of forming metallic articles
    Publication number: 20040144643
    Abstract: The invention encompasses a method of forming a metallic article. An ingot of metallic material is provided, and such ingot has an initial thickness. The ingot is subjected to hot forging. The product of the hot forging is quenched to fix an average grain size of less than 250 microns within the metallic material. The quenched material can be formed into a three dimensional physical vapor deposition target. The invention also includes a method of forming a cast ingot. In particular aspects, the cast ingot is a high-purity copper material. The invention also includes physical vapor deposition targets, and magnetron plasma sputter reactor assemblies.
    Type: Application
    Filed: January 14, 2004
    Publication date: July 29, 2004
    Inventors: Chi tse Wu, Wuwen Yi, Frederick B. Hidden, Susan D. Strothers