Abstract: A die temperature measurement system (300) includes an external test environment setup (352) and an integrated circuit (302). The external test environment setup (352) includes means to force and accurately measure electrical variables. The integrated circuit (302) includes a bipolar transistor (325); a selectable switch (340) for selecting from plurality of integrated resistances (342, 344) to be coupled in series between a base (322) of the bipolar transistor and a first input (362); and a selectable-gain current mirror (310) with a gain, a programmable current-mirror output coupled to the collector (326) of the bipolar transistor. The bipolar transistor and optional diodes (335) are sequentially biased with a set of proportional collector current levels. For each bias condition, the temperature-dependent voltage produced by the structure is extracted and stored. Die temperature is obtained through algebraic manipulation (450) of this data. Parasitic resistance and I/O pad leakage effects are canceled.

Abstract: Methods of forming 3-D ICs with integrated passive devices (IPDs) include stacking separately prefabricated substrates coupled by through-substrate-vias (TSVs). An active device (AD) substrate has contacts on its upper portion. An isolator substrate is bonded to the AD substrate so that TSVs in the isolator substrate are coupled to the contacts on the AD substrate. An IPD substrate is bonded to the isolator substrate so that TSVs therein are coupled to an interconnect zone on the isolator substrate and/or TSVs therein. The IPDs of the IPD substrate are coupled by TSVs in the IPD and isolator substrates to devices in the AD substrate. The isolator substrate provides superior IPD to AD cross-talk attenuation while permitting each substrate to have small high aspect ratio TSVs, thus facilitating high circuit packing density and efficient manufacturing.

Abstract: Fabrication processes for semiconductor devices are presented here. The device includes a support substrate, a buried oxide layer overlying the support substrate, a first semiconductor region located above the buried oxide layer and having a first conductivity type. The device also includes second, third, fourth, and fifth semiconductor regions. The second semiconductor region is located above the first semiconductor region, and it has a second conductivity type. The third semiconductor region is located above the second semiconductor region, and it has the first conductivity type. The fourth semiconductor region is located above the third semiconductor region, and it has the second conductivity type. The fifth semiconductor region extends through the fourth semiconductor region and the third semiconductor region to the second semiconductor region, and it has the second conductivity type.

Abstract: A test structure (200) in an integrated circuit (100) includes a probe pad (210) disposed at a surface of a die (102) of the integrated circuit, a transmission gate (202) for connecting portions of an electronic circuit within the integrated circuit in response to a momentary signal applied to the probe pad, a first inverter (221) having an input coupled to the probe pad and having an output coupled to a control input of the transmission gate, and a second inverter (222) having an input coupled to an output of the first inverter and having an output coupled to another control input of the transmission gate. The output of the second inverter is coupled to the input of the first inverter. Upon power-up, the transmission gate is open. After the momentary signal is applied to the probe pad, the transmission gate closes and remains closed until power is disconnected.

Abstract: Systems and methods are provided for delivering power from a first energy source to a second energy source. An electrical system for delivering power from a first energy source to a second energy source comprises an interface configured to be coupled to the second energy source, a switching element coupled between the first energy source and the interface, and a processing system coupled to the switching element and the interface. The processing system is configured to identify a connection event based on an electrical characteristic of the interface that is indicative of the interface being coupled to the second energy source and operate the switching element to provide a path for current from the first energy source in response to identifying the connection event.