Patents by Inventor Fritz L. Schurmeyer

Fritz L. Schurmeyer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Virtually nonvolatile static random access memory device
    Patent number: 4070655
    Abstract: A high density, static, virtually nonvolatile, Random Access Memory (RAM) cell is disclosed in which variable threshold n-channel depletion mode Metal-Nitride-Oxide-Semiconductor (MNOS) transistors are the load devices for a pair of active, n-channel, enhancement mode, Insulated Gate Field Effect Transistors (IGFETs) in a flip-flop circuit. N-channel enhancement mode access transistors also IGFETs connect the cell to the bit line and the bit line. Information is written in, and read, in volatile form conventionally. A +25 volt, 10 msec pulse applied to the gates of the depletion mode MNOS load devices transfers the data from the volatile mode to the nonvolatile mode.
    Type: Grant
    Filed: November 5, 1976
    Date of Patent: January 24, 1978
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Fritz L. Schurmeyer, Charles R. Young