Abstract: In an embodiment, a device bonding apparatus is provided. The device bonding apparatus includes a first process station configured to receive a wafer; a first bond head configured to carry a die to the wafer, wherein the first bonding head includes a first rigid body and a vacuum channel in the first rigid body for providing an attaching force for carrying the die to the wafer; and a second bond head configured to press the die against the wafer, the second bond head including a second rigid body and an elastic head disposed over the second rigid body for pressing the die, the elastic head having a center portion and an edge portion surrounding the center portion, the center portion of the elastic head having a first thickness, the edge portion of the elastic head having a second thickness, the second thickness being greater than the second thickness.

Abstract: A projection device, including an illumination system, a control element, a driving element, a light valve, and a projection lens, is provided. The illumination system includes multiple light sources for providing multiple light beams to be combined into an illumination light beam. The driving element respectively drives the light sources in a first mode or a second mode, so that the light beams have respective luminous brightness, and the driving element is switched from the first mode to the second mode according to a first signal. The control element provides the first signal to the driving element according to an optical state or a time state of the projection device. The light valve is adapted to convert the illumination light beam into an image light beam. The projection lens is adapted to project the image light beam out of the projection device.

Abstract: A support apparatus for a flexible screen, a foldable display module and a display device. The support apparatus for the flexible screen includes a support portion and a driving assembly. The support portion includes a first support portion and a second support portion connected with the first support portion. The driving assembly includes a rotary shaft assembly and a linkage assembly connected with the rotary shaft assembly. The rotary shaft assembly includes a plurality of rotary shafts arranged in parallel. The second support portion is slidably provided on the rotary shaft assembly and can be bent or unfolded together with the rotary shaft assembly. When the rotary shaft assembly is bent, the first support portion is driven by the linkage assembly to move away from or close to the rotary shaft assembly.

Abstract: An illumination system for providing an illumination beam includes red, blue, and green light source modules, a first light combining element, and a light uniforming element. The red light source module includes a first red light emitting element emitting first red light and a second red light emitting element emitting second red light. A peak wavelength of the second red light is greater than a peak wavelength of the first red light. The blue light source module includes a first blue light emitting element emitting first blue light and a second blue light emitting element emitting second blue light. A peak wavelength of the second blue light is less than a peak wavelength of the first blue light. The green light source module generates green light. The first light combining element guides these lights into the light uniforming element, so that the illumination system outputs the illumination beam.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first conductive structure arranged over a substrate. A memory layer is arranged over the first conductive structure, below a second conductive structure, and includes a ferroelectric material. An annealed seed layer is arranged between the first and second conductive structures and directly on a first side of the memory layer. An amount of the crystal structure that includes an orthorhombic phase is greater than about 35 percent.

Abstract: An apparatus and method for expanding a box blank into a box, the apparatus comprising an arm assembly, a controller, a camera and a box blank conveyor. The arm assembly includes a folding arm having a position in a first direction and a rotational angle controlled by the controller based on a position of a feature of the box blank in the field of view of the camera. The camera captures images of the box blank which are used to position the arm assembly and to evaluate the need to reject a box blank.

Abstract: A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a first nitride-based transistor, and a second nitride-based transistor. The first nitride-based transistor applies the 2DEG region as a channel thereof and comprising a first drain electrode that makes contact with the second nitride-based semiconductor layer to form a first Schottky diode with the second nitride-based semiconductor layer. The second nitride-based transistor applies the 2DEG region as a channel thereof and includes a second drain electrode that makes contact with the second nitride-based semiconductor layer to form a second Schottky diode with the second nitride-based semiconductor layer, such that the first Schottky diode and the second Schottky diode are connected to the same node.

Abstract: A device, which is used to inspect the confinement boundary of a vertical spent nuclear fuel storage canister during operation, includes a vertical spent nuclear fuel storage unit, a lifting unit, a transferring unit and an inspection platform. The vertical spent nuclear fuel storage unit includes a vertical storage canister and a storage overpack. The vertical storage canister is configured for storing spent nuclear fuels, and the storage overpack is configured for storing the vertical storage canister. The lifting unit, connected with the vertical storage canister, is configured for lifting the vertical storage canister. The transferring unit, connected with the lifting unit, is configured for protecting the lifted vertical storage canister. The inspection platform, connected with the transferring unit and the storage overpack, is configured for creating more space with sufficient shielding for the usage of inspecting the confinement boundary of the vertical storage canister.

Abstract: The present disclosure provides a semiconductor structure, including a transistor. The transistor includes a semiconductive substrate, a gate structure, a pair of highly doped regions and a dielectric element. The semiconductive substrate has a top surface. The gate structure is over the top surface. The pair of highly doped regions is separated by the gate structure. The dielectric element is embedded in the semiconductive substrate. The dielectric element is laterally and vertically misaligned with the pair of highly doped regions.

Abstract: A semiconductor device includes a first and a second nitride-based semiconductor layers, a source electrode, a drain electrode, a passivation layer, a stress modulation layer and a gate electrode. The stress modulation layer is disposed over the second nitride-based semiconductor layer and extends along at least one sidewall of the passivation layer to make contact with the second nitride-based semiconductor layer, so as to form an interface. The gate electrode is disposed over the stress modulation layer and between the source and drain electrodes. The gate electrode is located directly above the interface of the stress modulation layer and the second nitride-based semiconductor layer.

Abstract: A method and a system for detecting a semiconductor device are provided. The method comprises obtaining an image of the semiconductor device, evaluating a feature of the image, detecting a defect of the semiconductor device based on the feature, extracting a defect information for the defect, calculating a defect die ratio (DDR) in response to the defect and analyzing a relation between the DDR and the defect information.

Abstract: Various embodiments of the present disclosure are directed towards a memory cell comprising a blocking layer configured to block diffusion of metal from an electrode of the memory cell to a ferroelectric layer of the memory cell. More particularly, the blocking layer and the ferroelectric layer are between a top electrode of the memory cell and a bottom electrode of the memory cell, which both comprise metal. Further, the blocking layer is between the ferroelectric layer and the electrode, which corresponds to one of the top and bottom electrodes. In some embodiments, the metal of the one of the top and bottom electrodes has a lowest electronegativity amongst the metals of top and bottom electrodes and is hence the most reactive and likely to diffuse amongst the metals of top and bottom electrodes.

Abstract: An electronic whiteboard system and an operation method thereof are provided. The electronic whiteboard system includes a data processing device. The data processing device calculates an original message amount of an original object move message according to an object move operation on a cloud electronic whiteboard operated by one of the client devices. The data processing device simulates a grouping message amount of a grouping object move message according to the object move operation. The data processing device compares the original message amount and the grouping message amount to determine whether to generate the grouping object move message, and transmits the original object move message or the grouping object move message to other of the plurality of client devices.

Abstract: A bi-directional and multi-channel optical module incudes an encapsulation casing, a TOSA, a plurality of ROSAs and a plurality of optical folding elements. The TOSA is accommodated in the encapsulation casing. The TOSA includes a light emitting element and a thin film LiNbOx modulator, and a light receiving end of the thin film LiNbOx modulator is optically coupled with the light emitting element. The ROSAs are accommodated in the encapsulation casing. The ROSAs are configured to receive external optical signals propagating into the encapsulation casing. The optical folding elements are optically coupled with a plurality of light propagation ends of the thin film LiNbOx modulator, respectively, for changing a traveling direction of light emitted by the TOSA. Each of the optical folding elements is configured to enable one of the ROSAs share a fiber access terminal with the TOSA.

Abstract: A nitride-based semiconductor device includes a buffer, a first nitride-based semiconductor layer, a shield layer, a second nitride-based semiconductor layer, S/D electrodes, and a gate electrode. A first nitride-based semiconductor layer is disposed over the buffer. A shield layer is disposed between the buffer and the first nitride-based semiconductor layer and includes a first isolation compound that has a bandgap greater than a bandgap of the first nitride-based semiconductor layer, in which the first isolation compound is made of at least one two-dimensional material which includes at least one metal element. A second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap less than the bandgap of the first isolation compound and greater than the bandgap of the first nitride-based semiconductor layer. The pair of S/D electrodes and the gate electrode are disposed over the second nitride-based semiconductor layer.

Abstract: A semiconductor device includes a first to a third nitride-based semiconductor layers, a source electrode, a drain electrode and a gate electrode. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap less than a bandgap of the first nitride-based semiconductor layer, so as to form a heterojunction therebetween with a two-dimensional hole gas (2DHG) region. A third nitride-based semiconductor layer is embedded in the second nitride-based semiconductor layer and spaced apart from the first nitride-based semiconductor layer. The third nitride-based semiconductor layer is doped to have a first conductivity type different than that of the second nitride-based semiconductor layer.

Abstract: A semiconductor device a method of forming the same are provided. The method includes forming a fin extending from a substrate and forming a gate dielectric layer along a top surface and sidewalls of the fin. A first thickness of the gate dielectric layer along the top surface of the fin is greater than a second thickness of the gate dielectric layer along the sidewalls of the fin.

Abstract: A nitride-based semiconductor device including a first and a second nitride-based semiconductor layers, a source electrode and a drain electrode, and a gate structure. The gate structure includes at least one conductive layer and two or more doped nitride-based semiconductor layers. The at least one conductive layer includes metal, and is in contact with the second nitride-based semiconductor layer to form a metal-semiconductor junction therebetween. The two or more doped nitride-based semiconductor layers are in contact with the second nitride-based semiconductor layer and abut against the conductive layer, so as to form contact interfaces abutting against the metal-semiconductor junction with the second nitride-based semiconductor.

Abstract: An integrated circuit layout includes a first standard cell and a second standard cell. The first standard cell includes first gate lines arranged along a first direction and extending along a second direction. The second standard cell abuts to one side of the first standard cell along the second direction and includes second gate lines arranged along the first direction and extending along the second direction. A first gate line width of the first gate lines and a second gate line width of the second gate lines are different. A first cell width of the first standard cell and a second cell width of the second standard cell are integral multiples of a default gate line pitch of the first gate lines and the second gate lines. At least some of the second gate lines and at least some of the first gate lines are aligned along the second direction.

Abstract: A bidirectional optical module includes a TOSA, a ROSA and an optical filter. The TOSA includes a light emitting unit and a thin film LiNbOx modulator, and the thin film LiNbOx modulator is optically coupled with the light emitting unit. The ROSA is connected with the TOSA. The optical filter is provided for a fiber port which the TOSA shares with the ROSA.