Abstract: This disclosure relates to a polishing composition that includes an abrasive, at least two pH adjusters, a barrier film removal rate enhancer, a low-k removal rate inhibitor, and an azole-containing corrosion inhibitor. This disclosure also features a method of using the polishing composition to polish a substrate containing copper and silicon oxide.

Abstract: A voltage conversion device includes a filter circuit, a first inductor, a second inductor a first conversion module, a second conversion module, and a control circuit. The filter circuit is electrically connected to a first AC terminal and a second AC terminal. The first inductor is electrically connected to the first AC terminal and a first conversion terminal. The second inductor is electrically connected to the second AC terminal and a second conversion terminal. The first conversion module is electrically connected to a first DC voltage terminal, a second DC voltage terminal, and the first conversion terminal. The second conversion module is electrically connected to the first DC voltage terminal, the second DC voltage terminal, and the second conversion terminal. The control circuit transmits switch-control signals to the first conversion module and the second conversion module. A voltage conversion method is used with the voltage conversion device.

Abstract: A precharge method for a data driver includes steps of: outputting a display data to a plurality of output terminals of the data driver; outputting a second precharge voltage to an output terminal among the plurality of output terminals prior to outputting the display data to the output terminal, to precharge the output terminal to a voltage level closer to an output voltage; and outputting a first precharge voltage to the output terminal prior to outputting the second precharge voltage. The first precharge voltage provides a faster voltage transition on the output terminal than the second precharge voltage.

Abstract: An impeller includes a hub and a plurality of blades. The blades are arranged around the hub, and each blade includes a leading edge, a blade tip, a root portion, a trailing edge, a windward side and a leeward side. The windward side including a first turning point and a second turning point, a first vertical height difference is formed from the blade tip to the first turning point, and a second vertical height difference is formed from the first turning point to the second turning point, and the first vertical height difference is greater than the second vertical height difference. The impeller apparently reduces the noise.

Abstract: A mobile device includes a system circuit board, a metal frame, one or more other antenna elements, a display device, a first feeding element, and an RF (Radio Frequency) module. The system circuit board includes a system ground plane. The metal frame at least includes a first portion and a second portion. The metal frame at least has a first cut point positioned between the first portion and the second portion. The metal frame further has a second cut point for separating the other antenna elements from the first portion. The first cut point is arranged to be close to a middle region of the display device. The first feeding element is directly or indirectly electrically connected to the first portion. A first antenna structure is formed by the first feeding element and the first portion.

Abstract: A driving method for a multiple frequency coupling generator is provided. The method includes: in normal operations, interpreting an input digital control signal transmitted from a digital signal processor into an interpreted digital control signal; interpreting the interpreted digital control signal into a plurality of magnetic coupling signals by a magnetic coupling switch circuit; performing signal recovery and differential delay on the magnetic coupling signals by an interlocking circuit for reducing time difference and signal loss of the magnetic coupling signals; and when the interlocking circuit determines that the magnetic coupling signals have substantially no time difference and no signal loss, transforming the magnetic coupling signals into a first driving signal and a second driving signal by a switch circuit, a driver circuit and an output pad group to drive a backend driving loop.

Abstract: A bus system is provided. A plurality of slave devices are electrically connected to a master device through an enhanced serial peripheral interface (eSPI) bus. Each slave device has an alert handshake pin. The alert handshake pins of the slave devices are electrically connected together via an alert handshake control line. In a first phase of a plurality of phases in each assignment period of an assignment stage after a synchronization stage, the first slave device is configured to control the alert handshake control line to a second voltage level via the alert handshake pin. In the phases of each of the assignment periods except for the first phase, a first slave device of the slave devices is configured to control the alert handshake control line to communicate with the slave devices via the alert handshake pin. The first phase corresponds to a first slave device.

Abstract: A bus system is provided. A plurality of slave devices are electrically connected to a master device through an enhanced serial peripheral interface (eSPI) bus. The slave devices are electrically connected together via a control line. A first slave device is configured to provide a first clock signal to each second slave device via the control line, so that a second clock signal of each second slave device is synchronized with the first clock signal. After the second clock signals are synchronized with the first clock signal, each second slave device is configured to adjust a phase of the second clock signal in a clock phase shift stage, so that each second clock signal has a phase difference with the first clock signal. The phase differences between the second clock signals of the second slave devices and the first clock signal are different.

Abstract: A connector structure includes an insulated housing, at least one terminal assembly and at least one conductive assembly. The terminal assembly is disposed in the insulated housing. The conductive assembly is disposed at one side of the terminal assembly by crossing over the terminal assembly. The conductive assembly includes at least one metal piece and at least one polymer included conductive component. The polymer included conductive component is used to electrically connect the at least one metal pieces. The metal piece includes at least one spring finger contact, and the spring finger contact is electrically connected to the ground terminal in the terminal assembly. In additional, a terminal assembly structures of connector is also provided.

Abstract: A bus system is provided. The bus system includes a master device, an enhanced serial peripheral interface (eSPI) bus, an SPI bus, a memory device electrically connected to the master device via the SPI bus, and a plurality of slave devices electrically connected to the master device via the eSPI bus. Each of the slave devices has a pin, and the pins of the slave devices are electrically connected together via a control line. After obtaining program code from the memory device via the master device, a first slave device is configured to decrypt the program code according to a first security code, and transmit the program code decrypted by the first security code to the slave devices via the control line, so that the program code decrypted by the first security code is decrypted in the slave devices according to a decryption sequence.

Abstract: A bus system is provided. A plurality of slave devices are electrically connected to a master device through an enhanced serial peripheral interface (eSPI) bus. The slave devices are electrically connected together via a control line. A first slave device is configured to provide a first clock signal to each second slave device via the control line, so that a second clock signal of each second slave device is synchronized with the first clock signal. After the second clock signals are synchronized with the first clock signal, each second slave device is configured to adjust a phase of the second clock signal in a clock phase shift stage, so that each second clock signal has a phase difference with the first clock signal. The phase differences between the second clock signals of the second slave devices and the first clock signal are different.

Abstract: A bus system is provided. A memory device is electrically connected to a master device via a serial peripheral interface (SPI) bus. A plurality of slave devices are electrically connected to the master device via an enhanced SPI (eSPI) bus. Each of the slave devices has an alert handshake pin. The alert handshake pins of the slave devices are electrically connected together via an alert-handshake control line. The first slave device is electrically connected to the memory device via the SPI bus. After obtaining a program code from the memory device, the first slave device verifies the program code using a security code and controls the alert-handshake control line to unlock all the slave devices except for the first slave device via the alert handshake pin in response to the program code being verified. The unlocked slave devices communicate with the master device via the eSPI bus.

Abstract: A bus system is provided. The bus system includes a master device, an enhanced serial peripheral interface (eSPI) bus, an SPI bus, a memory device electrically connected to the master device via the SPI bus, and a plurality of slave devices electrically connected to the master device via the eSPI bus. Each of the slave devices has a pin, and the pins of the slave devices are electrically connected together via a control line. After obtaining program code from the memory device via the master device, a first slave device is configured to decrypt the program code according to a first security code, and transmit the program code decrypted by the first security code to the slave devices via the control line, so that the program code decrypted by the first security code is decrypted in the slave devices according to a decryption sequence.

Abstract: A User Equipment (UE) including a wireless transceiver and a controller is provided. The wireless transceiver performs wireless transmission and reception to and from a mobile communication network. The controller determines whether the mobile communication network supports IMS services. The controller establishes a Packet Data Network (PDN) connection or a Protocol Data Unit (PDU) session with the mobile communication network for the IMS services via the wireless transceiver in response to the mobile communication network supporting the IMS services. The controller sends application data on the PDN connection or PDU session via the wireless transceiver.

Abstract: A User Equipment (UE) including a wireless transceiver and a controller is provided. The wireless transceiver performs wireless transmission and reception to and from a mobile communication network. The controller determines whether the mobile communication network supports IMS services. The controller establishes a Packet Data Network (PDN) connection or a Protocol Data Unit (PDU) session with the mobile communication network for the IMS services via the wireless transceiver in response to the mobile communication network supporting the IMS services. The controller sends application data on the PDN connection or PDU session via the wireless transceiver.

Abstract: A bus system is provided. A memory device is electrically connected to a master device via a serial peripheral interface (SPI) bus. A plurality of slave devices are electrically connected to the master device via an enhanced SPI (eSPI) bus. Each of the slave devices has an alert handshake pin. The alert handshake pins of the slave devices are electrically connected together via an alert-handshake control line. The first slave device is electrically connected to the memory device via the SPI bus. After obtaining a program code from the memory device, the first slave device verifies the program code using a security code and controls the alert-handshake control line to unlock all the slave devices except for the first slave device via the alert handshake pin in response to the program code being verified. The unlocked slave devices communicate with the master device via the eSPI bus.

Abstract: A method of forming a semiconductor device includes implanting dopants of a first conductivity type into a semiconductor substrate to form a first well, epitaxially growing a channel layer over the semiconductor substrate, forming a fin from the second semiconductor material, and forming a gate structure over a channel region of the fin. The semiconductor substrate includes a first semiconductor material. Implanting the dopants may be performed at a temperature in a range of 150° C. to 500° C. The channel layer may include a second semiconductor material. The channel layer may be doped with dopants of the first conductivity type.

Abstract: A bus system is provided. A plurality of slave devices are electrically connected to a master device through an enhanced serial peripheral interface (eSPI) bus. Each slave device has an alert handshake pin. The alert handshake pins of the slave devices are electrically connected together via an alert handshake control line. In a first phase of a plurality of phases in each assignment period of an assignment stage after a synchronization stage, the first slave device is configured to control the alert handshake control line to a second voltage level via the alert handshake pin. In the phases of each of the assignment periods except for the first phase, a first slave device of the slave devices is configured to control the alert handshake control line to communicate with the slave devices via the alert handshake pin. The first phase corresponds to a first slave device.

Abstract: A method of forming a semiconductor device includes implanting dopants of a first conductivity type into a semiconductor substrate to form a first well, epitaxially growing a channel layer over the semiconductor substrate, forming a fin from the second semiconductor material, and forming a gate structure over a channel region of the fin. The semiconductor substrate includes a first semiconductor material. Implanting the dopants may be performed at a temperature in a range of 150° C. to 500° C. The channel layer may include a second semiconductor material. The channel layer may be doped with dopants of the first conductivity type.