Abstract: A coating composition is provided. The coating composition comprises (a) an aluminum oxide precursor and (b) a solvent, wherein the aluminum oxide precursor (a) comprises aluminum elements and the following groups bound thereon: (a1) a —OR1 group, wherein R1 is H or a substituted or unsubstituted C1 to C13 alkyl; (a2) a bidentate chelating group; and (a3) a tetrahedral coordinating group, wherein, the amount of the aluminum oxide precursor (a) is about 1 wt % to about 50 wt %, based on the total weight of the composition, and the total amount of the groups (a1), (a2) and (a3) is no more than 3 moles per 1 mole of the aluminum elements. The coating composition can be used in a semiconductor process for providing a passivation layer.

Abstract: The present invention pertains to a passivation layer disposed on a surface of a substrate for use in solar cells, including a first passivation layer formed on the substrate by screen printing. The present invention also pertains to a method for preparing the passivation layer structure. The method according to the present invention can prepare a passivation layer on a surface of a semiconductor substrate by screen printing, and during the screen printing, a patterning step can be performed simultaneously. Therefore, the present invention is able to produce the passivation layer in a more economic and faster manner.

Abstract: A coating composition is provided. The coating composition comprises (a) an aluminum oxide precursor and (b) a solvent, wherein the aluminum oxide precursor (a) comprises aluminum elements and the following groups bound thereon: (a1) a —OR1 group, wherein R1 is H or a substituted or unsubstituted C1 to C13 alkyl; (a2) a bidentate chelating group; and (a3) a tetrahedral coordinating group, wherein, the amount of the aluminum oxide precursor (a) is about 1 wt % to about 50 wt %, based on the total weight of the composition, and the total amount of the groups (a1), (a2) and (a3) is no more than 3 moles per 1 mole of the aluminum elements. The coating composition can be used in a semiconductor process for providing a passivation layer.

Abstract: The present invention discloses synthesis of 2,2?-disubstituted 9,9?-spirobifluorene-based triaryldiamine. First, 2,2?-diamino-9,9?-spirobifluorene, a Pd-catalyst as auxiliary and aryl halide BX are provided, wherein X is selected from the group consisting of: Cl, Br and I, B comprises one of the following group: aryl moiety, hetero cycle, multiple fused ring, multiple fused ring with hetero atom(s). Next, a substitution reaction is performed to react the 2,2?-diamino-9,9?-spirobifluorene with the aryl halide BX to produce the 2,2?-disubstituted 9,9?-spirobifluorene-based triaryldiamines. In addition, the present invention discloses organic light emitting devices comprising hole transporting material comprising 2,2?-bis(N,N-disubstituted amino)-9,9?-spirobifluorenes.

Abstract: The present invention discloses a carbazole-based compound with a general formula as following: , wherein Q is a non-conjugate moiety, A comprises one of the following group: aryl moiety, hetero cycle, multiple fused ring, multiple fused ring with hetero atom(s). In addition, the present invention discloses a method for forming the carbazole-based compound.

Abstract: The present invention discloses synthesis of 2,2?-disubstituted 9,9?-spirobifluorene-based triaryldiamine. First, 2,2?-diamino-9,9?-spirobifluorene, a Pd-catalyst as auxiliary and aryl halide BX are provided, wherein X is selected from the group consisting of: Cl, Br and I, B comprises one of the following group: aryl moiety, hetero cycle, multiple fused ring, multiple fused ring with hetero atom(s). Next, a substitution reaction is performed to react the 2,2?-diamino-9,9?-spirobifluorene with the aryl halide BX to produce the 2,2?-disubstituted 9,9?-spirobifluorene-based triaryldiamines. In addition, the present invention discloses organic light emitting devices comprising hole transporting material comprising 2,2?-bis(N,N-disubstituted amino)-9,9?-spirobifluorenes.

Abstract: A substituted oligofluorene for organic light-emitting diode (OLED) and organic photoconductor (OPC) has a chemical structure of: wherein X and Y are an integer of 0 or 1, G1 and G2 are independently of either CnH2n+1 or CnH2n+1O; and n is an integer of 0 to 16.