Abstract: An interconnect and a method of forming an interconnect for a semiconductor device is provided. The interconnect is formed by treating an upper surface of a dielectric layer to create a high density layer. The treatment may include, for example, creating a high density monolayer using hexamethyldisilazane (HMDS), trimethylsilydiethylamine (TMSDEA) or trimethylsilylacetate (OTMSA). After treating, the dielectric layer may be patterned to create openings, which are subsequently filled with a conductive material. Excess conductive material may be removed using, for example, a chemical mechanical polishing.

Abstract: The present disclosure provides a method of fabricating a semiconductor device with metal interconnections and a design of a tool for performing such a method. In one embodiment, a method of fabricating a semiconductor device, the method includes providing a semiconductor substrate, depositing a dielectric layer over the semiconductor substrate, forming at least one trench in the dielectric layer, and forming a metallization layer in the trench and over the dielectric layer. The method further includes performing a chemical mechanical polishing process to planarize the metallization layer and the dielectric layer, performing a surface treatment on the planarized dielectric layer to form a protection layer, cleaning the planarized metallization layer and the treated dielectric layer to remove residue from the chemical mechanical polishing process, and drying the cleaned metallization layer and dielectric layer in an inert gas environment.

Abstract: A semiconductor substructure with improved performance and a method of forming the same is described. The method includes providing a semiconductor dielectric layer having a recess formed therein; forming an interconnect structure with a metal liner and a conductive fill within the recess; and applying an electron beam treatment to the substructure.

Abstract: In a semiconductor wafer manufacturing apparatus, a rotation module is provided to hold the semiconductor wafer at a plane. The semiconductor wafer is revolved by the rotation module around a first axis. The first axis is substantially perpendicular to the plane. A cleaning module is configured to revolve around a second axis when the cleaning module contacts the surface of the semiconductor wafer. A mechanism is further provided to enable the rotation module and/or the cleaning module to move along a direction substantially perpendicular to the first axis. Consequently, the relative velocities at the contact points between the semiconductor wafer and the cleaning module are changed. Moreover, no relative velocity at any contact point between the semiconductor wafer and the cleaning module is zero or close to zero.

Abstract: Embodiments of mechanisms for performing a chemical mechanical polishing (CMP) process are provided. A method for performing a CMP process includes polishing a wafer by using a polishing pad. The method also includes applying a cleaning liquid jet on the polishing pad to condition the polishing pad. A CMP system is also provided.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate and an interconnect structure disposed over the substrate. The interconnect structure includes a plurality of interconnect layers. One of the interconnect layers contains: a plurality of metal via slots and a bulk metal component disposed over the plurality of metal via slots. The present disclosure also provides a method. The method includes providing a wafer, and forming a first layer over the wafer. The method includes forming an interconnect structure over the first layer. The forming the interconnect structure includes forming a second interconnect layer over the first layer, and forming a third interconnect layer over the second interconnect layer. The second interconnect layer is formed to contain a plurality of metal via slots and a bulk metal component formed over the plurality of metal via slots. The third interconnect layer contains one or more metal trenches.

Abstract: A plate with a static charge on a surface is used to clean a brush. The plate uses both static charge and mechanical force to remove particles from the surface of the brush to increase the useful life of the brush.

Abstract: A method for manufacturing a container from husk includes the steps of comminuting the husk into powder form, mixing the powder with an edible adhesive, with the introduction of steam, to form a paste, forming a blank from the paste, shaping the blank into a primary semi-product, re-shaping the primary semi-product to force the paste to flow and fill into cracks formed on the primary semi-product during the shaping step to form a secondary semi-product, drying the secondary semi-product and applying a surface coating to the dried product and then drying the surface coating.