Abstract: A metal electrode of a ceramic capacitor and a method of forming the same are provided. The method includes mixing metal powders and a barium titanate organic-precursor to obtain precursor powders; adding an adhesive to the precursor powders to obtain a metal slurry; performing a molding process to the metal slurry to obtain a film material; performing a binder burn-out process to the film material to obtain a degumming film; and performing a sintering process to the degumming film to obtain the metal electrode. By mixing specific amount of barium titanate organic-precursor with the metal powders, the barium titanate metallic organic-precursor can be transformed to barium titanate in the following process, and barium titanate can be dispersed between the metals homogeneously. Therefore, electrode continuity can be increased.

Abstract: A novel method for determining whether substrates are correctly positioned on a substrate support in a semiconductor substrate processing or measuring tool for optimum processing or measuring of the substrates. The method includes providing a control substrate; providing alignment marks on the substrate; determining a homing position for the alignment marks on the control substrate wherein the position of the control substrate corresponds to a homing position for optimum processing or measuring of actual substrates; periodically testing the position of the control substrate on the substrate support as facilitated by the substrate transfer and/or substrate positioning equipment of the tool; and determining whether the position of the alignment marks on the control substrate, with respect to the substrate support, stray outside an accepted deviation range.

Abstract: A novel method for determining whether substrates are correctly positioned on a substrate support in a semiconductor substrate processing or measuring tool for optimum processing or measuring of the substrates. The method includes providing a control substrate; providing alignment marks on the substrate; determining a homing position for the alignment marks on the control substrate wherein the position of the control substrate corresponds to a homing position for optimum processing or measuring of actual substrates; periodically testing the position of the control substrate on the substrate support as facilitated by the substrate transfer and/or substrate positioning equipment of the tool; and determining whether the position of the alignment marks on the control substrate, with respect to the substrate support, stray outside an accepted deviation range.

Abstract: A method including operating an ion implanted to implanting ions in a semiconductor wafer at a first ion dose level; performing a first thermal wave measurement to obtain the first thermal wave value; placing the semiconductor wafer in a rapid thermal annealing furnace and operating the furnace to rapidly heat the semiconductor wafer at a first rate for a first time period and so that the wafer is heated with intent of achieving a wafer temperature of 500° C.; performing a second thermal wave measurement to obtain a second thermal wave value; comparing the difference between the first thermal wave value and the second thermal wave value to a target range of 376.5-382.5 and rejecting the wafer as being outside of an acceptable specification if the difference is outside of the target range.

Abstract: A rapid thermal anneal (RTA) chamber having one or multiple openings in a chamber wall and a reflective index monitor in the opening or openings, respectively. The reflective index monitor or monitors each measures the infrared reflective index of the reflector plate of the rapid thermal anneal chamber, and sends a corresponding signal to a process controller, an alarm, or both a process controller and an alarm. In the event that the measured reflective index of the reflector plate deviates from the reflective index of a control, the process controller terminates heating operation of the chamber to prevent damage to the semiconductor wafer in the chamber. The alarm may be activated to alert personnel to the need for immediate replacement of the contaminated reflector plate.

Abstract: A method including operating an ion implanted to implanting ions in a semiconductor wafer at a first ion dose level; performing a first thermal wave measurement to obtain the first thermal wave value; placing the semiconductor wafer in a rapid thermal annealing furnace and operating the furnace to rapidly heat the semiconductor wafer at a first rate for a first time period and so that the wafer is heated with intent of achieving a wafer temperature of 500° C.; performing a second thermal wave measurement to obtain a second thermal wave value; comparing the difference between the first thermal wave value and the second thermal wave value to a target range of 376.5-382.5 and rejecting the wafer as being outside of an acceptable specification if the difference is outside of the target range.

Abstract: A method and apparatus comprising a wafer platform which rotates a semiconductor wafer at a predetermined speed while being moved in a linear motion with respect to a stationary water jet nozzle spraying a water or fluid jet onto the wafer during a wafer scrubbing process. The coupled rotary and linear motions of the wafer facilitates through washing or rinsing of the wafer surface and spreads impact energy of water or fluid sprayed onto a wafer surface over a large surface area on the wafer, resulting in a substantial reduction of particles remaining at the center of the wafer after the wafer scrubbing operation and preventing or minimizing the likelihood of impact damage to the wafer during the wafer scrubbing process. In another embodiment, the water or fluid jet nozzle moves along a horizontal axis while the spinning wafer remains stationary.

Abstract: A rapid thermal anneal (RTA) chamber having one or multiple openings in a chamber wall and a reflective index monitor in the opening or openings, respectively. The reflective index monitor or monitors each measures the infrared reflective index of the reflector plate of the rapid thermal anneal chamber, and sends a corresponding signal to a process controller, an alarm, or both a process controller and an alarm. In the event that the measured reflective index of the reflector plate deviates from the reflective index of a control, the process controller terminates heating operation of the chamber to prevent damage to the semiconductor wafer in the chamber. The alarm may be activated to alert personnel to the need for immediate replacement of the contaminated reflector plate.