Patents by Inventor Fu-Tsai Hou

Fu-Tsai Hou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated circuit with multi-level arrangement of e-fuse protected decoupling capacitors
    Patent number: 10014252
    Abstract: An embodiment is a circuit. The circuit includes active circuitry, a first capacitor, a first fuse, a second capacitor, and a second fuse. The active circuitry has a first power node and a second power node. The first capacitor is coupled to the first fuse serially to form a first segment. The second capacitor is coupled to the second fuse serially to form a second segment. The first segment and the second segment are coupled together in parallel and between the first power node and the second power node.
    Type: Grant
    Filed: July 1, 2016
    Date of Patent: July 3, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Cheng Chang, Liang-Chen Lin, Fu-Tsai Hou, Tung-Chin Yeh, Shih-Kai Lin, Gia-Her Lu, Jyun-Lin Wu, Hsien-Pin Hu
  • CAPACITOR WITH FUSE PROTECTION
    Publication number: 20160315050
    Abstract: An embodiment is a circuit. The circuit includes active circuitry, a first capacitor, a first fuse, a second capacitor, and a second fuse. The active circuitry has a first power node and a second power node. The first capacitor is coupled to the first fuse serially to form a first segment. The second capacitor is coupled to the second fuse serially to form a second segment. The first segment and the second segment are coupled together in parallel and between the first power node and the second power node.
    Type: Application
    Filed: July 1, 2016
    Publication date: October 27, 2016
    Inventors: Shih-Cheng Chang, Liang-Chen Lin, Fu-Tsai Hou, Tung-Chin Yeh, Shih-Kai Lin, Gia-Her Lu, Jyun-Lin Wu, Hsien-Pin Hu
  • Methods for forming stacked capacitors with fuse protection
    Patent number: 9385079
    Abstract: An embodiment is a circuit. The circuit includes active circuitry, a first capacitor, a first fuse, a second capacitor, and a second fuse. The active circuitry has a first power node and a second power node. The first capacitor is coupled to the first fuse serially to form a first segment. The second capacitor is coupled to the second fuse serially to form a second segment. The first segment and the second segment are coupled together in parallel and between the first power node and the second power node.
    Type: Grant
    Filed: July 17, 2014
    Date of Patent: July 5, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Cheng Chang, Liang-Chen Lin, Fu-Tsai Hou, Tung-Chin Yeh, Shih-Kai Lin, Gia-Her Lu, Jyun-Lin Wu, Hsien-Pin Hu
  • Capacitor with Fuse Protection
    Publication number: 20150214150
    Abstract: An embodiment is a circuit. The circuit includes active circuitry, a first capacitor, a first fuse, a second capacitor, and a second fuse. The active circuitry has a first power node and a second power node. The first capacitor is coupled to the first fuse serially to form a first segment. The second capacitor is coupled to the second fuse serially to form a second segment. The first segment and the second segment are coupled together in parallel and between the first power node and the second power node.
    Type: Application
    Filed: July 17, 2014
    Publication date: July 30, 2015
    Inventors: Shih-Cheng Chang, Liang-Chen Lin, Fu-Tsai Hou, Tung-Chin Yeh, Shih-Kai Lin, Gia-Her Lu, Jyun-Lin Wu, Hsien-Pin Hu
  • Bump-on-trace structures with wide and narrow portions
    Patent number: 8441127
    Abstract: A device includes a package component, and a metal trace on a surface of the package component. A first and a second dielectric mask cover a top surface and sidewalls of the metal trace, wherein a landing portion of the metal trace is located between the first and the second dielectric masks. The landing portion includes a first portion having a first width, and a second portion connected to an end of the first portion. The second portion has a second width greater than the first width, wherein the first and the second widths are measured in a direction perpendicular to a lengthwise direction of the metal trace.
    Type: Grant
    Filed: June 29, 2011
    Date of Patent: May 14, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Fu-Tsai Hou, Liang-Chen Lin
  • Bump-on-Trace Structures with Increased Current Entrance Areas
    Publication number: 20130001769
    Abstract: A device includes a package component, and a metal trace on a surface of the package component. A first and a second dielectric mask cover a top surface and sidewalls of the metal trace, wherein a landing portion of the metal trace is located between the first and the second dielectric masks. The landing portion includes a first portion having a first width, and a second portion connected to an end of the first portion. The second portion has a second width greater than the first width, wherein the first and the second widths are measured in a direction perpendicular to a lengthwise direction of the metal trace.
    Type: Application
    Filed: June 29, 2011
    Publication date: January 3, 2013
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Fu-Tsai Hou, Liang-Chen Lin