Abstract: A differential amplifier stage and method for offset cancellation include an amplifier having an input and an output. An internal offset cancellation circuit has an input for receiving a control signal to control offset cancellation in the amplifier. The offset cancellation circuit is integrated with the amplifier but isolated from the input and the output of the amplifier, and, in accordance with its isolation, an impedance of the stage is unaffected by the offset cancellation circuit.

Abstract: An apparatus and method for aligning one or more components while attaching the component to a substrate. The component is positioned over the substrate. An alignment tool is attachable to the component. The alignment tool includes a tool alignment element, an optical tool, and a substrate alignment element attached to the substrate. The tool alignment element aligns with the substrate alignment element such that the components are positioned at specified locations on the substrate for attachment to the substrate. Further, in the method according to the disclosure, the tool alignment element aligns with the substrate alignment element to position one or more components at a specified location on the substrate.

Abstract: A silicon-on-insulator wafer is provided. The silicon-on-insulator wafer includes a silicon substrate having optical vias formed therein. In addition, an optically transparent oxide layer is disposed on the silicon substrate and the optically transparent oxide layer is in contact with the optical vias. Then, a complementary metal-oxide-semiconductor layer is formed over the optically transparent oxide layer.

Abstract: A differential amplifier stage and method for offset cancellation include an amplifier having an input and an output. An internal offset cancellation circuit has an input for receiving a control signal to control offset cancellation in the amplifier. The offset cancellation circuit is integrated with the amplifier but isolated from the input and the output of the amplifier, and, in accordance with its isolation, an impedance of the stage is unaffected by the offset cancellation circuit.

Abstract: A silicon-on-insulator wafer is provided. The silicon-on-insulator wafer includes a silicon substrate having optical vias formed therein. In addition, an optically transparent oxide layer is disposed on the silicon substrate and the optically transparent oxide layer is in contact with the optical vias. Then, a complementary metal-oxide-semiconductor layer is formed over the optically transparent oxide layer.

Abstract: Processing for a silicon photonics wafer is provided. A silicon photonics wafer that includes an active silicon photonics layer, a thin buried oxide layer, and a silicon substrate is received. The thin buried oxide layer is located between the active silicon photonics layer and the silicon substrate. An electrical CMOS wafer that includes an active electrical layer is also received. The active silicon photonics layer of the silicon photonics wafer is flip chip bonded to the active electrical layer of the electrical CMOS wafer. The silicon substrate is removed exposing a backside surface of the thin buried oxide layer. A low-optical refractive index backing wafer is added to the exposed backside surface of the thin buried oxide layer. The low-optical refractive index backing wafer is a glass substrate or silicon substrate wafer. The silicon substrate wafer includes a thick oxide layer that is attached to the thin buried oxide layer.

Abstract: A differential amplifier stage and method for offset cancellation include an amplifier having an input and an output. An internal offset cancellation circuit has an input for receiving a control signal to control offset cancellation in the amplifier. The offset cancellation circuit is integrated with the amplifier but isolated from the input and the output of the amplifier, and, in accordance with its isolation, an impedance of the stage is unaffected by the offset cancellation circuit.

Abstract: A differential amplifier stage and method for offset cancellation include an amplifier having an input and an output. An internal offset cancellation circuit has an input for receiving a control signal to control offset cancellation in the amplifier. The offset cancellation circuit is integrated with the amplifier but isolated from the input and the output of the amplifier, and, in accordance with its isolation, an impedance of the stage is unaffected by the offset cancellation circuit.

Abstract: A photonic integrated circuit apparatus is disclosed. The apparatus includes a photonic chip and a lens array coupling element. The photonic chip includes a waveguide at a side edge surface of the photonic chip. The lens array coupling element is mounted on a top surface of the photonic chip and on the side edge surface. The coupling element includes a lens array that is configured to modify spot sizes of light traversing to or from the waveguide. The coupling element further includes an overhang on a side of the coupling element that opposes the lens array and that abuts the top surface of the photonic chip. The overhang includes a vertical stop surface that has a depth configured to horizontally align an edge of the waveguide with a focal length of the lens array and that vertically aligns focal points of the lens array with the edge of the waveguide.

Abstract: A differential amplifier stage and method for offset cancellation include an amplifier having an input and an output. An internal offset cancellation circuit has an input for receiving a control signal to control offset cancellation in the amplifier. The offset cancellation circuit is integrated with the amplifier but isolated from the input and the output of the amplifier, and, in accordance with its isolation, an impedance of the stage is unaffected by the offset cancellation circuit.

Abstract: A chip system and method includes a photonics chip and an electrical integrated circuit (IC) flip-chip coupled to the photonics chip to form an optochip. The IC or the photonics chip includes an array of bond pads for attachment to the other. The optochip has an array of bond pads for subsequent attachment to a carrier where the photonics chip includes an exposed edge to connect with at least one waveguide.

Abstract: An apparatus and method for aligning one or more components while attaching the component to a substrate. The component is positioned over the substrate. An alignment tool is attachable to the component. The alignment tool includes a tool alignment element, an optical tool, and a substrate alignment element attached to the substrate. The tool alignment element aligns with the substrate alignment element such that the components are positioned at specified locations on the substrate for attachment to the substrate. Further, in the method according to the disclosure, the tool alignment element aligns with the substrate alignment element to position one or more components at a specified location on the substrate.

Abstract: An apparatus and method for aligning one or more components while attaching the component to a substrate. The component is positioned over the substrate. An alignment tool is attachable to the component. The alignment tool includes a tool alignment element, an optical tool, and a substrate alignment element attached to the substrate. The tool alignment element being alignable with the substrate alignment element such that the components are positioned at specified locations on the substrate for attachment to the substrate. Further, in the method according to the disclosure, the tool alignment element aligning with the substrate alignment element to position one or more components at a specified location on the substrate.

Abstract: A differential amplifier stage and method for offset cancellation include an amplifier having an input and an output. An internal offset cancellation circuit has an input for receiving a control signal to control offset cancellation in the amplifier. The offset cancellation circuit is integrated with the amplifier but isolated from the input and the output of the amplifier, and, in accordance with its isolation, an impedance of the stage is unaffected by the offset cancellation circuit.

Abstract: A silicon-on-insulator wafer is provided. The silicon-on-insulator wafer includes a silicon substrate having optical vias formed therein. In addition, an optically transparent oxide layer is disposed on the silicon substrate and the optically transparent oxide layer is in contact with the optical vias. Then, a complementary metal-oxide-semiconductor layer is formed over the optically transparent oxide layer.

Abstract: An apparatus and method for aligning one or more components while attaching the component to a substrate. The component is positioned over the substrate. An alignment tool is attachable to the component. The alignment tool includes a tool alignment element, an optical tool, and a substrate alignment element attached to the substrate. The tool alignment element aligns with the substrate alignment element such that the components are positioned at specified locations on the substrate for attachment to the substrate.

Abstract: A method of fabricating a dielectric film comprising atoms of Si, C, O and H (hereinafter SiCOH) that has improved insulating properties as compared with prior art dielectric films, including prior art SiCOH dielectric films that are not subjected to the inventive deep ultra-violet (DUV) is disclosed. The improved properties include reduced current leakage which is achieved without adversely affecting (increasing) the dielectric constant of the SiCOH dielectric film. In accordance with the present invention, a SiCOH dielectric film exhibiting reduced current leakage and improved reliability is obtained by subjecting an as deposited SiCOH dielectric film to a DUV laser anneal. The DUV laser anneal step of the present invention likely removes the weakly bonded C from the film, thus improving leakage current.

Abstract: A method of fabricating a dielectric film comprising atoms of Si, C, O and H (hereinafter SiCOH) that has improved insulating properties as compared with prior art dielectric films, including prior art SiCOH dielectric films that are not subjected to the inventive deep ultra-violet (DUV) is disclosed. The improved properties include reduced current leakage which is achieved without adversely affecting (increasing) the dielectric constant of the SiCOH dielectric film. In accordance with the present invention, a SiCOH dielectric film exhibiting reduced current leakage and improved reliability is obtained by subjecting an as deposited SiCOH dielectric film to a DUV laser anneal. The DUV laser anneal step of the present invention likely removes the weakly bonded C from the film, thus improving leakage current.

Abstract: A method of fabricating a dielectric film comprising atoms of Si, C, O and H (hereinafter SiCOH) that has improved insulating properties as compared with prior art dielectric films, including prior art SiCOH dielectric films that are not subjected to the inventive deep ultra-violet (DUV) is disclosed. The improved properties include reduced current leakage which is achieved without adversely affecting (increasing) the dielectric constant of the SiCOH dielectric film. In accordance with the present invention, a SiCOH dielectric film exhibiting reduced current leakage and improved reliability is obtained by subjecting an as deposited SiCOH dielectric film to a DUV laser anneal. The DUV laser anneal step of the present invention likely removes the weakly bonded C from the film, thus improving leakage current.

Abstract: A method of fabricating a dielectric film comprising atoms of Si, C, O and H (hereinafter SiCOH) that has improved insulating properties as compared with prior art dielectric films, including prior art SiCOH dielectric films that are not subjected to the inventive deep ultra-violet (DUV) is disclosed. The improved properties include reduced current leakage which is achieved without adversely affecting (increasing) the dielectric constant of the SiCOH dielectric film. In accordance with the present invention, a SiCOH dielectric film exhibiting reduced current leakage and improved reliability is obtained by subjecting an as deposited SiCOH dielectric film to a DUV laser anneal. The DUV laser anneal step of the present invention likely removes the weakly bonded C from the film, thus improving leakage current.