Abstract: A combined electric power generations' supply system includes an AC power generator that supplies power by off grid independent operation, a DC power supply device, an inverter that converts DC power output by the DC power supply device into AC power. The rotation calculation unit calculates a value relating to a rotation of a rotor when driving the virtual power generator according to an active power command based on a rotor model calculates a value relating to the rotation of the rotor of the virtual power generator and the active power command. The output determination unit determines values relating to an active power and a reactive power to be output to the inverter based on the calculated value relating to the rotation. The modulation control unit performs control of a pulse width modulation of the inverter based on the determined value relating to the active power and reactive power.

Abstract: There is provided a medicament capable of enhancing the antimicrobial peptide production ability. The medicament contains, as an active ingredient, a compound which is glycyrrhizin or a pharmaceutically acceptable salt thereof and capable of inhibiting the production of at least one of interleukin-10 (IL-10) and chemokine CCL2. The antimicrobial peptide is preferably defensin or cathelicidin.

Abstract: The invention is a method of determining a set temperature profile of a method of controlling respective substrate temperatures of plurality of groups in accordance with respective corresponding set temperature profiles. The invention includes a first heat processing step of controlling respective substrate temperatures of a plurality of groups in accordance with respective predetermined provisional set temperature profiles for first-batch substrates that are classified into the plurality of groups, and of introducing a process gas to conduct a heat process to form films on the substrates; a first film-thickness measuring step of measuring a thickness of the films formed on the substrates; and a first set-temperature-profile amending step of respectively amending the provisional set temperature profiles based on the measured thickness, in such a manner that a thickness of films formed during a heat process is substantially the same between the plurality of groups.

Abstract: The object of the present invention is to provide the use of glycyrrhizin and its derivatives for inhibition of MCP-1 production. The present invention discloses an MCP-1 production inhibition method and pharmaceutical composition for the same comprising administration of glycyrrhizin and its derivatives in an amount effective for said inhibition to mammals in which migration of monocytes or T lymphocytes is increased, or production of IL-10 is increased, and inhibition of said increase is desired, thereby treating or preventing decreases in infection resistance.

Abstract: The object of the present invention is to provide the use of glycyrrhizin and its derivatives for inhibition of MCP-1 production. The present invention discloses an MCP-1 production inhibition method and pharmaceutical composition for the same comprising administration of glycyrrhizin and its derivatives in an amount effective for said inhibition to mammals in which migration of monocytes or T lymphocytes is increased, or production of IL-10 is increased, and inhibition of said increase is desired.

Abstract: A heat treatment apparatus has a controller (100) provided with a temperature estimator (110) for estimating a temperature of a wafer by detection signals of temperature sensors (Sin, Sout) and a temperature calibrator (120) for correcting the estimated temperature of the wafer. In order to calibrate the temperature, an offset value stored in an offset table (122) is used. The offset value is determined based on the relationship between film-thickness of films formed in an experimental heat treatment process and process temperatures.

Abstract: Temperature control is made without the risk of contaminating object-to-be-processed and with high accuracy. Temperatures are metered out of contact with the objects-to-be-processed, and based on a metered result, estimated temperatures of the objects-to-be-processed are computed. Furthermore, estimation errors of the estimated temperatures are computed to correct the estimated temperatures. Based on a temperature recipe stating relationships between set temperatures and times and the corrected estimated temperatures, a heater is controlled.

Abstract: The invention is a method of determining a set temperature profile for a method of controlling respective substrate temperatures of a plurality of groups in accordance with respective corresponding set temperature profiles, in a method of heat processing a plurality of substrates that are classified into the plurality of groups.

Abstract: A heat treatment apparatus for making a heat treatment while estimating temperatures of objects-to-be-processed that can estimate correct temperatures of the objects-to-be-processed. A reaction tube includes heaters and temperature sensors, and receives a wafer boat. A controller estimates temperatures of wafers and temperatures of the temperature sensors in zones in the reaction tube corresponding to the heaters by using the temperature sensors and electric powers of the heaters. Based on relationships between estimated temperatures of the temperature sensors and really metered temperatures, functions expressing the relationships between the estimated temperatures and the really metered temperatures are given for the respective zones. The functions are substituted by the estimated wafer temperatures to correct the estimated wafer temperatures.

Abstract: The invention is a method of determining a set temperature profile for a method of controlling respective substrate temperatures of a plurality of groups in accordance with respective corresponding set temperature profiles, in a method of heat processing a plurality of substrates that are classified into the plurality of groups.

Abstract: A temperature drop is be prevented when a plurality of substrates are processed one after another so as to improve a uniformity of process quality between the substrate. An offset temperature value is obtained which is a difference between a temperature of a processing atmosphere at a time immediately before a first one of the substrates is carried into a reaction container and a temperature of the processing atmosphere at a time the temperature has become constant after the substrate are subjected to a heat treatment process one after another. An electric power is supplied to a heater so as to obtain a time period necessary for raising the temperature of a processing atmosphere to a temperature higher than a setting temperature for the heat treatment process by the offset temperature value.

Abstract: The object of the present invention is to provide the use of glycyrrhizin and its derivatives for induction of RANTES. The present invention discloses an RANTES induction method and pharmaceutical composition for the same comprising administration of glycyrrhizin and its derivatives in an amount effective for treating or preventing decreases in infection resistance to opportunistic infections occurring in burn patients, AIDS patients, cancer patients, encephalitis patients, individuals having suffered serious injuries or undergone major surgery, or individuals subject to stress.

Abstract: The object of the present invention is to provide the use of glycyrrhizin and its derivatives for inhibition of MCP-1 production. The present invention discloses an MCP-1 production inhibition method and pharmaceutical composition for the same comprising administration of glycyrrhizin and its derivatives in an amount effective for said inhibition to mammals in which migration of monocytes or T lymphocytes is increased, or production of IL-10 is increased, and inhibition of said increase is desired.

Abstract: There is provided a batch type heat treatment system, control method and heat treatment method capable of appropriately coping with a multi-product small-lot production. A reaction tube 2 comprises a plurality of heaters 31 through 35 and a plurality of temperature sensors, and houses therein a wafer boat 23. A control part 100 stores therein many mathematical models for estimating (calculating) the temperature of wafers W in the reaction tube 2, in accordance with the number and arranged position of the wafers W mounted on the wafer boat 23, and many target temperature trajectories. If the wafer boat 23 is loaded in the reaction tube 2, a mathematical model and a target temperature trajectory corresponding to the number and arranged position of the mounted wafers W are read.

Abstract: A heat treatment apparatus has a controller (100) provided with a temperature estimator (110) for estimating a temperature of a wafer by detection signals of temperature sensors (Sin, Sout) and a temperature calibrator (120) for correcting the estimated temperature of the wafer. In order to calibrate the temperature, an offset value stored in an offset table (122) is used. The offset value is determined based on the relationship between film-thickness of films formed in an experimental heat treatment process and process temperatures.

Abstract: A temperature drop is be prevented when a plurality of substrates are processed one after another so as to improve a uniformity of process quality between the substrate. An offset temperature value is obtained which is a difference between a temperature of a processing atmosphere at a time immediately before a first one of the substrates is carried into a reaction container and a temperature of the processing atmosphere at a time the temperature has become constant after the substrate are subjected to a heat treatment process one after another. An electric power is supplied to a heater so as to obtain a time period necessary for raising the temperature of a processing atmosphere to a temperature higher than a setting temperature for the heat treatment process by the offset temperature value.

Abstract: A heat treatment apparatus has a controller (100) provided with a temperature estimator (110) for estimating a temperature of a wafer by detection signals of temperature sensors (Sin, Sout) and a temperature calibrator (120) for correcting the estimated temperature of the wafer. In order to calibrate the temperature, an offset value stored in an offset table (122) is used. The offset value is determined based on the relationship between film-thickness of films formed in an experimental heat treatment process and process temperatures.

Abstract: The invention is a method of determining a set temperature profile for a method of controlling respective substrate temperatures of a plurality of groups in accordance with respective corresponding set temperature profiles, in a method of heat processing a plurality of substrates that are classified into the plurality of groups.

Abstract: This invention is a method of determining set temperature trajectories for a heat treatment system that conducts a first heat treatment process and a second heat treatment process to an object to be processed. The method comprises the steps of: conducting the first heat treatment process to a first test object to be processed, by using a temporary first set temperature trajectory; measuring a result of the first heat treatment process produced on the first test object to be processed; and determining a first set temperature trajectory for the first heat treatment process by correcting the temporary first set temperature trajectory on the basis of the measured result of the first heat treatment process.

Abstract: A plurality of wafers W are mounted on a wafer boat 11 in a reaction tube 1 having a double-tube structure as shelves, and zones 6a, 6b and 6c in the reaction tube 1 are heated to a first process temperature, e.g., 770° C., by heating parts 4a, 4b and 4c of a heater 4, respectively. Then, while the temperature in each of the zones 6a, 6b and 6c is lowered to a second process temperature, e.g., 750° C., which is lower than the first process temperature, a deposition gas is fed to deposit a thin film. If a step of raising the temperature in each of the zones 6a, 6b and 6c and a step of feeding the deposition gas while lowering the temperature of each of the zones 6a, 6b and 6c are repeatedly carried out, a deposition process is carried out while the temperature of the peripheral edge portion of each of the wafers W is lower than the temperature of the central portion of the wafer W. Thus the uniformity of the thickness of the film deposited on each of the wafers is improved.