Abstract: The cleaning agent described above comprises a surfactant and an organic solvent, and the cleaning method described above is characterized by allowing the cleaning agent described above to flow on the surface of the material to be treated at a high speed to thereby clean the above surface. According to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.

Abstract: The bleaching compositions of discolored teeth comprise titanium dioxide initiating photocatalyst action with light irradiation, chemical compounds generating hydrogen peroxide in an aqueous solution and thickening agents. Further the bleaching methods of discolored teeth comprising applying the bleaching composition onto the surface area of the teeth and then initiating photocatalyst action by irradiating the applied surfaces area with light. Therefore, the present invention shows remarkable bleaching results due to easy application of the compositions onto discolored teeth and keeping the original activity of the photocatalyst without its deterioration.

Abstract: The cleaning method described above is characterized by allowing a cleaning agent comprising an oxidizing agent, a chelating agent and fluorine compound to flow on a surface of a material to be treated at a high speed to thereby clean the above surface according to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.

Abstract: The cleaning method described above is characterized by allowing a cleaning agent comprising an oxidizing agent, a chelating agent and a fluorine compound to flow on a surface of a material to be treated at a bigh speed to thereby clean the above surface. according to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.

Abstract: The cleaning agent described above comprises a surfactant and an organic solvent, and the cleaning method described above is characterized by allowing the cleaning agent described above to flow on the surface of the material to be treated at a high speed to thereby clean the above surface. According to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.

Abstract: There is disclosed a cleaning liquid for producing a semiconductor device which comprises (A) fluorine-containing compound; (B) water-soluble or water-miscible organic solvent; and (C) inorganic acid and/or organic acid, optionally, further comprises (D) quaternary ammonium salt or (D') a specific organic carboxylic acid ammonium salt and/or an organic carboxylic acid amine salt; as well as a process for producing a semiconductor device by forming a resist pattern on a substrate equipped on the surface with an insulating film layer or a metallic electroconductive layer, forming a via hole or electric wiring by dry etching, removing the resist pattern by ashing treatment with oxygen plasma; and effecting an cleaning treatment with the above cleaning liquid. The above cleaning liquid and production process can readily remove the deposit polymer formed in the case of dry etching without impairing metallic film and insulating film.