Abstract: The present disclosure provides a placing and routing method for implementing back bias in fully depleted silicon-on-insulator. In accordance with some illustrative embodiments herein, the placing and routing method comprises placing a first plurality of a standard tap well cell along a first direction, the standard tap well cell being formed by: routing a p-BIAS wire VPW and an n-BIAS wire VNW in a first a first metallization layer, and routing a power rail and a ground rail in a second metallization layer, the VPW and the VNW extending across each of the power and ground rail, wherein the VPWs of the first plurality of standard tap well cells are continuously connected and the VNWs of the first plurality of standard tap well cells are continuously connected.

Abstract: The present disclosure provides a placing and routing method for implementing back bias in fully depleted silicon-on-insulator. In accordance with some illustrative embodiments herein, the placing and routing method comprises placing a first plurality of a standard tap well cell along a first direction, the standard tap well cell being formed by: routing a p-BIAS wire VPW and an n-BIAS wire VNW in a first a first metallization layer, and routing a power rail and a ground rail in a second metallization layer, the VPW and the VNW extending across each of the power and ground rail, wherein the VPWs of the first plurality of standard tap well cells are continuously connected and the VNWs of the first plurality of standard tap well cells are continuously connected.

Abstract: Techniques for use in integrated circuit design systems for reducing metal fill insertion time in the integrated circuit design process. In one example, a method includes the following steps. Metal fill data associated with a given layout from a placement and routing database of an integrated circuit design system is stored. The metal fill data is purged from the placement and routing database. At least one change to layout data in the placement and routing database is implemented. The stored metal fill data is loaded into the placement and routing database after the at least one change is implemented to the layout data. A check is performed for an existence of one or more violations associated with the metal fill data due to implementing the at least one change to the layout data in the placement and routing database. A correction procedure is performed on the metal fill data when one or more violations exist.

Abstract: Techniques for use in integrated circuit design systems for reducing metal fill insertion time in the integrated circuit design process. In one example, a method includes the following steps. Metal fill data associated with a given layout from a placement and routing database of an integrated circuit design system is stored. The metal fill data is purged from the placement and routing database. At least one change to layout data in the placement and routing database is implemented. The stored metal fill data is loaded into the placement and routing database after the at least one change is implemented to the layout data. A check is performed for an existence of one or more violations associated with the metal fill data due to implementing the at least one change to the layout data in the placement and routing database. A correction procedure is performed on the metal fill data when one or more violations exist.