Abstract: An oxide superconductor member is composed of a tape-shaped substrate, an intermediate layer formed on this substrate and an oxide superconductor thin film layer formed on this intermediate layer. A surface of the tape-shaped substrate is polished by continuously running the tape-shaped substrate. The polishing step includes initial polishing process and finishing process which are carried out such that the average surface roughness Ra of the substrate becomes 2 nanometers or less and the in-plane directionality of the intermediate layer becomes 5° or less after the polishing step.

Abstract: An oxide superconductor member is composed of a tape-shaped substrate, an intermediate layer formed on this substrate and an oxide superconductor thin film layer formed on this intermediate layer. A surface of the tape-shaped substrate is polished by continuously running the tape-shaped substrate. The polishing step includes initial polishing process and finishing process which are carried out such that the average surface roughness Ra of the substrate becomes 2 nanometers or less and the in-plane directionality of the intermediate layer becomes 5° or less after the polishing step.

Abstract: A surface polishing method for enhancing crystal orientation on the surface of a tapelike metal substrate in order to enhance the critical current of a superconducting thin film. In an oxide superconductor comprising a tapelike substrate, an intermediate layer formed on the tapelike substrate, and an oxide superconducting thin film layer formed on the intermediate layer, the method for polishing a surface to be polished of the tapelike substrate comprises a step for polishing the surface to be polished while traveling the tapelike substrate continuously, wherein an initial polishing step and a finish polishing step are included. Ultimately, the average surface roughness Ra of the polished surface is 2 nanometer or less and the in-plane orientation ?? is 5° or less.

Abstract: An oxide superconductor member is composed of a tape-shaped substrate, an intermediate layer formed on this substrate and an oxide superconductor thin film layer formed on this intermediate layer. A surface of the tape-shaped substrate is polished by continuously running the tape-shaped substrate. The polishing step includes initial polishing process and finishing process which are carried out such that the average surface roughness Ra of the substrate becomes 2 nanometers or less and the in-plane directionality of the intermediate layer becomes 5° or less after the polishing step.