Abstract: There is provided a shower head electrode assembly of a plasma processing apparatus, comprising: an electrode having a plurality of first gas flow paths and having a surface exposed to plasma; and a backing member attached to the electrode and having a plurality of second gas flow paths which communicate with the plurality of first gas flow paths. Each of the plurality of second gas flow paths is a slit-shaped elongated hole, and is configured such that a length of the elongated hole in radial direction is longer than a length of the elongated hole in circumferential direction with respect to a central axis of the shower head electrode assembly.

Abstract: A plasma processing apparatus disclosed herein includes a chamber, a substrate support, an upper electrode, and at least one power supply. The chamber provides a processing space therein. The substrate support is provided in the chamber. The upper electrode configures a shower head that introduces a gas into the processing space from above the processing space. The upper electrode includes a first electrode and a second electrode. The first electrode provides a plurality of first gas holes opened toward the processing space. The second electrode is provided directly or indirectly on the first electrode and provides a plurality of second gas holes communicating with the plurality of first gas holes. The at least one power supply is configured to set a potential of the second electrode to a potential higher than a potential of the first electrode.

Abstract: An etching method is performed using a plasma processing apparatus that includes a processing chamber equipped with a support stage that accommodates a substrate, a first annular member disposed around the substrate and at least a part of the first annular member is disposed in a space between a lower surface of an outer peripheral portion of the substrate and an upper surface of the support stage, and a second annular member disposed outside the first annular member. The etching method includes adjusting a dielectric constant in the space using the first annular member in accordance with consumption of the second annular member; and etching the substrate.

Abstract: An etching method is performed using a plasma processing apparatus that includes a processing chamber equipped with a support stage that accommodates a substrate, a first annular member disposed around the substrate and at least a part of the first annular member is disposed in a space between a lower surface of an outer peripheral portion of the substrate and an upper surface of the support stage, and a second annular member disposed outside the first annular member. The etching method includes adjusting a dielectric constant in the space using the first annular member in accordance with consumption of the second annular member; and etching the substrate.