Abstract: According to one embodiment, a projection type liquid crystal display device includes a liquid crystal display panel and a bezel. The liquid crystal display panel includes an array substrate, an opposed substrate, and a liquid crystal layer provided between the array substrate and the opposed substrate. The liquid crystal display panel has a first surface on one side of the array substrate and the opposed substrate, and a second surface on another side of the array substrate and the opposed substrate. The bezel covers a part of the liquid crystal panel. The bezel includes a first opening provided on a side of the first surface and a second opening provided on a side of the second surface. The second opening has a larger size than the first opening.

Abstract: According to one embodiment, a projection type liquid crystal display device includes a liquid crystal display panel and a bezel. The liquid crystal display panel includes an array substrate, an opposed substrate, and a liquid crystal layer provided between the array substrate and the opposed substrate. The liquid crystal display panel has a first surface on one side of the array substrate and the opposed substrate, and a second surface on another side of the array substrate and the opposed substrate. The bezel covers a part of the liquid crystal panel. The bezel includes a first opening provided on a side of the first surface and a second opening provided on a side of the second surface. The second opening has a larger size than the first opening.

Abstract: According to one embodiment, a projection type liquid crystal display device includes a liquid crystal display panel and a bezel. The liquid crystal display panel includes an array substrate, an opposed substrate, and a liquid crystal layer provided between the array substrate and the opposed substrate. The liquid crystal display panel has a first surface on one side of the array substrate and the opposed substrate, and a second surface on another side of the array substrate and the opposed substrate. The bezel covers a part of the liquid crystal panel. The bezel includes a first opening provided on a side of the first surface and a second opening provided on a side of the second surface. The second opening has a larger size than the first opening.

Abstract: According to one embodiment, a projection type liquid crystal display device includes a liquid crystal display panel and a bezel. The liquid crystal display panel includes an array substrate, an opposed substrate, and a liquid crystal layer provided between the array substrate and the opposed substrate. The liquid crystal display panel has a first surface on one side of the array substrate and the opposed substrate, and a second surface on another side of the array substrate and the opposed substrate. The bezel covers a part of the liquid crystal panel. The bezel includes a first opening provided on a side of the first surface and a second opening provided on a side of the second surface. The second opening has a larger size than the first opening.

Abstract: The radius of curvature of an outer surface of a panel useful portion is 10,000 mm or more. Assuming that a length of a perforated region of a shadow mask in an X-axis (major axis) direction is 2L, s is a variable satisfying 0<s<1, a sagging amount difference of the perforated region at a point of X=sL with respect to a point of X=0 on the X axis and a sagging amount difference of the perforated region at a point of X=L with respect to the point of X=sL on the X axis are ?Z01(s) and ?Z02(s), respectively, a sagging amount difference of the perforated region at the point of X=sL with respect to the point of X=0 on the long side and a sagging amount difference of the perforated region at the point of X=L with respect to the point of X=sL on the long side are ?Z11(s) and ?Z12(s), respectively, when ?(s) represented by ?(s)=(?Z01(s)/?Z11(s))/(?Z02(s)/?Z12(s)) is defined, d?(s)/ds?0.4 is satisfied in at least a portion in a range of 0.2?s?0.8.

Abstract: The radius of curvature of the outer surface of a panel is 10,000 mm or more, and a shadow mask is made of a material containing 95% or more of iron. A sagging amount change curve along a curve C1 on the surface of the shadow mask, which a plane passing through a center P0 of a useful area of the shadow mask and parallel to a tube axis and a major axis crosses, satisfies a particular Condition 1. Assuming that an intersection between the curve C1 and a useful area end of the shadow mask is a major axis end PL, a distance from the center P0 to the major axis end PL along a major axis is W, and a point on the curve C1 away from the center P0 by ?×W in the major axis direction is P1, a sagging amount change curve along a curve C2 on the surface of the shadow mask, which a plane passing through the point P1 and parallel to the tube axis and the minor axis crosses, satisfies a particular Condition 2.

Abstract: The radius of curvature of an outer surface of a useful portion of a panel is 10,000 mm or more, and a shadow mask is made of a material containing 95% or more of iron. Assuming that a distance (unit: mm) along an X-axis between a center of the panel and a peripheral edge of the useful portion is LH, and a total number of rows of apertures composed of electron beam passage apertures arranged on a straight line substantially parallel to a Y-axis is N, 0.9?LH/N?1.0 is satisfied. Furthermore, assuming that a pitch of adjacent rows of apertures is PHC at a center of a perforated region of the shadow mask, PHH at a major axis end of the perforated region, and PHM at a point away from the center of the perforated region by 2/3 of a distance MH between the center of the perforated region and the major axis end along the X-axis, PHM/PHC?1.2 and PHH/PHC?1.4 are satisfied.

Abstract: The radius of curvature of an outer surface of a panel useful portion is 10,000 mm or more. Assuming that a length of a perforated region of a shadow mask in an X-axis (major axis) direction is 2L, s is a variable satisfying 0<s<1, a sagging amount difference of the useful portion at a point of X=sL with respect to a point of X=0 on the X axis and a sagging amount difference of the perforated region at a point of X=L with respect to the point of X=sL on the X axis are ?Z01(s) and ?Z02(s), respectively, a sagging amount difference of the useful portion at the point of X=sL with respect to the point of X=0 on the long side and a sagging amount difference of the perforated region at the point of X=L with respect to the point of X=sL on the long side are ?Z11(s) and ?Z12(s), respectively, when ?(s) represented by ?(s)=(?Z01(s)/?Z11(s))/(?Z02(s)/?Z12(s)) is defined, d?(s)/ds?0.4 is satisfied in at least a portion in a range of 0.2?s?0.8.

Abstract: The radius of curvature of the outer surface of a panel is 10,000 mm or more, and a shadow mask is made of a material containing 95% or more of iron. A sagging amount change curve along a curve C1 on the surface of the shadow mask, which a plane passing through a center P0 of a useful area of the shadow mask and parallel to a tube axis and a major axis crosses, satisfies a particular Condition 1. Assuming that an intersection between the curve C1 and a useful area end of the shadow mask is a major axis end PL, a distance from the center P0 to the major axis end PL along a major axis is W, and a point on the curve C1 away from the center P0 by ?×W in the major axis direction is P1, a sagging amount change curve along a curve C2 on the surface of the shadow mask, which a plane passing through the point P1 and parallel to the tube axis and the minor axis crosses, satisfies a particular Condition 2.

Abstract: A shadow mask has a major axis H and a minor axis V that intersect at right angles with each other, and a curvature along the major axis is set to satisfy the following relationships, Cxm0<Cxmv, and Cxmd<Cxmh where Cxm0 is a curvature at an origin O where the major axis and the minor axis intersect at right angles, Cxmv is a curvature at a point (0, Ymvi) that is located towards a long side from a point of at least ¾ of a distance from the origin on the minor axis to an end of an effective dimension, Cxmh is a curvature at a point (Xmhi, 0) that is located in a region of 2/4 to ¾ of a distance from the origin on the major axis to an end of an effective dimension, and Cxmd is a curvature at a coordinate point (Xmhi, Ymvi).