Abstract: A variable capacity turbocharger includes a housing, a turbine impeller at least partially located in the housing, a scroll flow path located in the housing and encircling the turbine impeller, a first nozzle ring and a second nozzle ring facing each other in the housing, a nozzle flow path located between the first nozzle ring and the second nozzle ring and fluidly coupling the scroll flow path to the turbine impeller, a gap formed between the first nozzle ring and the housing, and a bearing hole located in the first nozzle ring and including an opening adjacent to the gap. The gap is located on an opposite side of the first nozzle ring to the nozzle flow path. Additionally, the gap is connected to the scroll flow path.

Abstract: A parallel operation system of transmission amplifiers enable the parallel running by the two distortion compensation amplifiers using the digital pre-distorter system and to provide a parallel operation system of the transmission amplifiers that makes it possible to switch to respective single running easily. The parallel operation system includes first and second transmission amplifiers which receive common input signals for outputting amplified signals from respective ones; and a coupling unit which combines outputs of the first and second transmission amplifiers, to provide as its output; the first and second transmission amplifiers each having a main amplifier; and a modulation unit disposed on the input side of the main amplifier; wherein the output of one of the modulation units included in the first and second transmission amplifiers is fed in common to the main amplifiers included in the first and second transmission amplifiers.

Abstract: It is an object of the invention to implement a tester simulation system capable of finding margins of respective expected value determining timings in a short time, and a tester simulation method using the same. The invention is an improvement of a tester simulation system for executing a test of a device under test by use of a tester by running a simulation using a DUT model for simulating an operation of the device under test, and a tester model for simulating an operation of the tester. The tester simulation system is characterized in comprising a margin analyzing means for analyzing margins of respective expected value determining timings on the basis of output data of the DUT model.

Abstract: An optical semiconductor device includes an optical semiconductor element, a semiconductor region, and a buried layer. The optical semiconductor element is formed on a semiconductor substrate. The semiconductor region opposes the optical semiconductor element and essentially surrounds the optical semiconductor element to form walls. The buried layer is arranged between the walls of the semiconductor region and the optical semiconductor element and formed by vapor phase epitaxy. In this optical semiconductor device, a distance between the wall of the semiconductor region and a side wall of the optical semiconductor element is larger in a portion in which the growth rate of the vapor phase epitaxy in a horizontal direction from the side wall of the optical semiconductor element and the wall of the semiconductor region is higher.

Abstract: An optical semiconductor device includes an optical semiconductor element, a semiconductor region, and a buried layer. The optical semiconductor element is formed on a semiconductor substrate. The semiconductor region opposes the optical semiconductor element and essentially surrounds the optical semiconductor element to form walls. The buried layer is arranged between the walls of the semiconductor region and the optical semiconductor element and formed by vapor phase epitaxy. In this optical semiconductor device, a distance between the wall of the semiconductor region and a side wall of the optical semiconductor element is larger in a portion in which the growth rate of the vapor phase epitaxy in a horizontal direction from the side wall of the optical semiconductor element and the wall of the semiconductor region is higher.

Abstract: An optical semiconductor device includes an optical semiconductor element, a semiconductor region, and a buried layer. The optical semiconductor element is formed on a semiconductor substrate. The semiconductor region opposes the optical semiconductor element and essentially surrounds the optical semiconductor element to form walls. The buried layer is arranged between the walls of the semiconductor region and the optical semiconductor element and formed by vapor phase epitaxy. In this optical semiconductor device, a distance between the wall of the semiconductor region and a side wall of the optical semiconductor element is larger in a portion in which the growth rate of the vapor phase epitaxy in a horizontal direction from the side wall of the optical semiconductor element and the wall of the semiconductor region is higher.

Abstract: A parallel operation system of transmission amplifiers enable the parallel running by the two distortion compensation amplifiers using the digital pre-distorter system and to provide a parallel operation system of the transmission amplifiers that makes it possible to switch to respective single running easily. The parallel operation system includes first and second transmission amplifiers which receive common input signals for outputting amplified signals from respective ones; and a coupling unit which combines outputs of the first and second transmission amplifiers, to provide as its output; the first and second transmission amplifiers each having a main amplifier; and a modulation unit disposed on the input side of the main amplifier; wherein the output of one of the modulation units included in the first and second transmission amplifiers is fed in common to the main amplifiers included in the first and second transmission amplifiers.

Abstract: An optical semiconductor device includes an optical semiconductor element, a semiconductor region, and a buried layer. The optical semiconductor element is formed on a semiconductor substrate. The semiconductor region opposes the optical semiconductor element and essentially surrounds the optical semiconductor element to form walls. The buried layer is arranged between the walls of the semiconductor region and the optical semiconductor element and formed by vapor phase epitaxy. In this optical semiconductor device, a distance between the wall of the semiconductor region and a side wall of the optical semiconductor element is larger in a portion in which the growth rate of the vapor phase epitaxy in a horizontal direction from the side wall of the optical semiconductor element and the wall of the semiconductor region is higher.

Abstract: A wireless device that performs transmission of multiple wireless channels arranged within the used wireless frequency band at prescribed frequency intervals. Multiple wireless channels are divided into two systems, odd-numbered and even-numbered with gaps of one, or into two or more systems with gaps of two or more. Included are transmission amplifiers that transmit in common for each system, multiple band elimination filters connected in cascades to reduce the adjacent-channel leakage power in each system, and circulators that compose the transmission signals of each system. Transmission is done from an antenna via a transmission-reception signal splitter.

Abstract: An optical semiconductor device includes an optical semiconductor element, a semiconductor region, and a buried layer. The optical semiconductor element is formed on a semiconductor substrate. The semiconductor region opposes the optical semiconductor element and essentially surrounds the optical semiconductor element to form walls. The buried layer is arranged between the walls of the semiconductor region and the optical semiconductor element and formed by vapor phase epitaxy. In this optical semiconductor device, a distance between the wall of the semiconductor region and a side wall of the optical semiconductor element is larger in a portion in which the growth rate of the vapor phase epitaxy in a horizontal direction from the side wall of the optical semiconductor element and the wall of the semiconductor region is higher.

Abstract: A heat insulation chamber according to the present invention is a heat insulation chamber which is made of heat insulating material and forms an inner chamber for accommodating an electronic part. This heat insulation chamber achieves coupling between the electronic part accommodated in the inner chamber formed within a cabinet and the outside of the cabinet by a radio transmission path or a coupling path by static coupling or inductive coupling. A thermostatic chamber and a cryostat according to the present invention comprise the aforementioned heat insulation chamber, a heat exchanger mounted in the heat insulation chamber, and a thermoregulator which maintains the temperature of the inner chamber accommodating the electronic part at an operating temperature of the electronic part through the heat exchanger.

Abstract: The present invention relates to a feed-forward amplifying device suitable for radio communication systems such as digital automobile telephone.

Abstract: A feedforward amplifier having a distortion detection loop and a distortion elimination loop is provided that achieves increased accuracy, improved response, and stable operation. A variable attenuator is placed in front of a detector in a loop output stage, and the amount of attenuation in the variable attenuator is set large during a transient response period during the rising of the amplifier, and set small during a steady-state condition. The detection of the transition to the steady-state condition is accomplished, for example, by comparing the detector output with a prescribed threshold value. The width of perturbation is set large during a transient response period, and set small during a steady-state condition.

Abstract: A plastic magnet injection molding machine comprising a pair of exciting coils respectively embedded into a fixed plate and a movable plate along with respective seats and a metal mold including ferromagnetic central members and non-magnetic peripheral members is provided. With such an arrangement, the machine can anisotropically process magnet powder with enhanced efficiency by energizing the coils. Both the fixed plate 2 and the movable plate 4 of the machine are made of ferromagnetic metal. The exciting coils 7, 8 are respectively embedded into the plates at the oppositely disposed sides thereof along with the non-magnetic annular seats 9, 10 surrounding the respective exciting coils. The fixed mold 12 and the movable mold 13 of the metal mold 11 of the machine include respective central members 14, 15 made of ferromagnetic metal. The central members 14, 15 of the fixed and movable molds are respectively made to abut corresponding central portions 2a, 4a of the fixed plate 2 and the movable plate 4.

Abstract: An optical semiconductor device includes an optical semiconductor element, a semiconductor region, and a buried layer. The optical semiconductor element is formed on a semiconductor substrate. The semiconductor region opposes the optical semiconductor element and essentially surrounds the optical semiconductor element to form walls. The buried layer is arranged between the walls of the semiconductor region and the optical semiconductor element and formed by vapor phase epitaxy. In this optical semiconductor device, a distance between the wall of the semiconductor region and a side wall of the optical semiconductor element is larger in a portion in which the growth rate of the vapor phase epitaxy in a horizontal direction from the side wall of the optical semiconductor element and the wall of the semiconductor region is higher.

Abstract: An adhesive composition which comprises:(A) 100 parts by weight of a polyorganosiloxane represented by the formula (I): ##STR1## (wherein R.sup.1 s may be the same or different from each other and each represent a monovalent hydrocarbon group or a halogen-substituted hydrocarbon group; and n is a positive integer);(B) 0.5 to 10 parts by weight of a tetraalkoxysilane represented by the following formula:R.sup.2.sub.a Si(OR.sup.3).sub.4-a (II)(wherein R.sup.2 represents an alkyl group having 1 to 3 carbon atoms, a phenyl group or a vinyl group; R.sup.3 represents an alkyl group having 1 to 4 carbon atoms or an alkoxy-substituted alkyl group having 3 to 6 carbon atoms; and a is 0 or 1),or a partially hydrolyzed condensate thereof; and(C) 0.1 to 15 parts by weight of a trialkoxysilane represented by the formula (III):R.sup.4 (R.sup.5).sub.b Si(OR.sup.6).sub.3-b (III)(wherein R.sup.4 represents a substituted or unsubstituted aminoalkyl group; R.sup.

Abstract: A member communication system which includes a radio base station connected to an exchange for establishing a communication interface with a mobile terminal such as a car telephone set where the number of output carriers of a modulation apparatus to be inputted to an amplification apparatus is controlled so as to be decreased in response to failure of an amplification circuit or circuits so that an increase in intermodulation distortion is eliminated and the necessity for each amplification circuit to have a superfluous saturation output is eliminated, thereby reducing power consumption.

Abstract: A feed-forward amplifier of a type preventing unwanted waves from being outputted in an initial operation suitable to a use in a radio transmitter-receiver in a radio communication system, aimed to reduce a loss in the course from an output of a main amplifier to an output of the apparatus by implementing an output control during the initial operation in the front stage of the main amplifier without switches having been heretofore used, further reducing a power consumption of the apparatus.

Abstract: In a feed forward amplifier, an RF amplifier is supplied with an input RF signal at an input terminal for amplifying the same; a distortion extraction loop supplied with the input RF signal and further with the output RF signal from the RF amplifier is for extracting non-linear distortion components formed in the output RF signal as a result of amplification in the RF amplifier; a variable phase shifter is provided in the distortion extraction loop for varying a phase of the input RF signal; a variable attenuator is provided in the distortion extraction loop for attenuating an amplitude of the input RF signal that has been supplied to the distortion extraction loop; and a distortion extraction circuit is provided in the distortion extraction loop for producing a distortion output signal that includes non-linear components; further, a control circuit is supplied with the input signal and with the distortion output signal for extracting a main signal component contained in the distortion output signal.

Abstract: A loop testable radio transmitter/receiver includes a transmission system which includes a transmission frequency converting unit and a transmission signal filter unit. A receiving system is provided, including a receiving signal filter and a receiving frequency converter. The transmitter/receiver further includes a transmitter/receive sharing unit, a transmission signal looping unit for attenuating the transmission signal of the transmission system and for looping back it to the receiving system, and a shifter arranged to the output side of the receiving frequency converting unit in the receiving system for converting an intermediate frequency of a signal converted by the receiving frequency converting unit into the receiving input frequency of a modulator/demodulator.