Abstract: The piezoelectric element is a piezoelectric element including, on a substrate in the following order, a lower electrode layer, a piezoelectric film containing a perovskite-type oxide as a main component, and an upper electrode layer, in which at least a region of the upper electrode layer closest to a side of the piezoelectric film is composed of an oxide conductive layer containing In, and regarding an interface region between the piezoelectric film and the oxide conductive layer of the upper electrode layer, in an intensity profile of binding energy, which is acquired by an X-ray photoelectron spectroscopy measurement, a peak intensity ratio ?/? satisfies ?/??0.25, wherein a is a peak intensity of binding energy derived from a 3d5/2 orbital of In bonded to oxygen, and ? is a peak intensity of binding energy derived from a 3d5/2 orbital of In bonded to an OH group.

Abstract: In a piezoelectric element including, on a substrate in the following order, a lower electrode layer, a piezoelectric film, and an upper electrode layer, the upper electrode layer includes an oxide conductive layer, has an interface layer containing a constituent element of the oxide conductive layer and an OH group, between the piezoelectric film and the oxide conductive layer of the upper electrode layer, where the interface layer has an amorphous structure and has a thickness of 1 nm or more and 5 nm or less, and in a case where a peak intensity of binding energy derived from a 1s orbital of oxygen bonded to a metal is denoted as ?, and a peak intensity of binding energy derived from a 1s orbital of oxygen constituting the OH group is denoted as ?, a peak intensity ratio ?/? is 0.35 or more.

Abstract: There is provided a piezoelectric laminate including, in the following order, a lower electrode layer and a piezoelectric film containing a Pb-containing perovskite-type oxide, in which the piezoelectric film contains an oxygen atom 18O having a mass number of 18 in oxygen as a constituent element in excess of a natural abundance ratio. There are also provided a piezoelectric laminate, a piezoelectric element, and a manufacturing method for a piezoelectric laminate.

Abstract: There is provided a piezoelectric laminate has, on a substrate in the following order, a lower electrode layer and a piezoelectric film containing a perovskite-type oxide as a main component. The piezoelectric film has an oxygen-deficient region in a region in contact with the lower electrode layer. In a case where an average value of oxygen amounts in a region centrally located among three regions obtained by dividing the piezoelectric film into three equal parts in a thickness direction is denoted as a first average oxygen amount, and an average value of oxygen amounts in the oxygen-deficient region is denoted as a second average oxygen amount, a ratio R of the second average oxygen amount to the first average oxygen amount is less than 0.97. A thickness of the oxygen-deficient region is 120 nm or more and is ? or less of a thickness of the entire piezoelectric film.

Abstract: The piezoelectric laminate and the piezoelectric element have, on a substrate in the following order, a lower electrode layer and a piezoelectric film containing a perovskite-type oxide, in which the lower electrode layer contains a Ta element, contains a Ta nitride on a side closest to the piezoelectric film in a thickness direction of the lower electrode layer, and includes a region where a content of the Ta element changes in the thickness direction, and the change in the content of the Ta element in the thickness direction is continuous.

Abstract: The piezoelectric laminate and the piezoelectric element have, on a substrate in the following order, a lower electrode layer and a piezoelectric film containing a perovskite-type oxide, in which the lower electrode layer includes the metal layer containing Ni and a surface layer containing a Ni oxide or a Ni oxynitride, and in the lower electrode layer, the surface layer is arranged on the side closest to the piezoelectric film.

Abstract: An object of the present invention is to provide a resonant sensor having excellent sensitivity and selectivity with respect to a component to be detected that is contained at a low concentration in the system. A resonant sensor of the present invention has a receiving layer that contains a polymer having a repeating unit represented by Formula (1). In Formula, R1 represents an alkyl group. A plurality of R1's may be the same as or different from each other. R2 represents a hydrogen atom, an alkyl group, or an aryl group.

Abstract: A gas detection method using a gas detection element obtained by laminating a fixed support, a first electrode (2), a dielectric sensor (3), a second electrode (4), and a gas adsorption film (5), in this order, the method including: a step of applying a first signal resonantly driving the dielectric sensor (3) between electrodes of the first electrode (1) and the second electrode (3), and detecting gas adsorbed on the gas adsorption film based on a change of a resonant frequency of the dielectric sensor; and a step of heating the dielectric sensor (3) by applying a second signal between the electrodes after the detection of gas and desorbing gas adsorbed in the gas adsorption film; a gas detection system capable of performing the method; and a gas desorption method appropriate for applying this gas detection method.

Abstract: The present invention provides a sensor having excellent sensitivity and selectivity with respect to a ketone-based compound. This sensor according to the present invention has a receiving layer including a polymer having a repeating unit represented by Formula (1), and detects a ketone-based compound.

Abstract: An object of the present invention is to provide a resonant sensor having excellent sensitivity and selectivity with respect to a component to be detected that is contained at a low concentration in the system. A resonant sensor of the present invention has a receiving layer that contains a polymer having a repeating unit represented by Formula (1). In Formula, R1 represents an alkyl group. A plurality of R1's may be the same as or different from each other. R2 represents a hydrogen atom, an alkyl group, or an aryl group.

Abstract: A gas detection method using a gas detection element obtained by laminating a fixed support, a first electrode (2), a dielectric sensor (3), a second electrode (4), and a gas adsorption film (5), in this order, the method including: a step of applying a first signal resonantly driving the dielectric sensor (3) between electrodes of the first electrode (1) and the second electrode (3), and detecting gas adsorbed on the gas adsorption film based on a change of a resonant frequency of the dielectric sensor; and a step of heating the dielectric sensor (3) by applying a second signal between the electrodes after the detection of gas and desorbing gas adsorbed in the gas adsorption film; a gas detection system capable of performing the method; and a gas desorption method appropriate for applying this gas detection method.

Abstract: Provided are an insect detection method that includes detecting an intrinsic gas emitted by an insect using a gas sensor including a gas adsorption membrane, the gas sensor being selected from a resonant sensor, an electrical resistance sensor, and a field effect transistor sensor; a gas sensor for insect detection and a gas sensor array for insect detection, which are suitable to be used for this method; and an electric machine product having the gas sensor or gas sensor array mounted therein.

Abstract: There is provided a method of manufacturing a semiconductor element including: forming a semiconductor film of which a principal constituent is an oxide semiconductor; forming a first insulation film on a surface of the semiconductor film; applying a heat treatment in an oxidizing atmosphere; and, forming a second insulation film on a surface of the first insulation film, wherein a thickness of the first insulation film and a temperature of the heat treatment in the third step are adjusted such that, if the thickness of the first insulation film is represented by Z (nm), the heat treatment temperature is represented by T (° C.) and a diffusion distance of oxygen into the first insulation film and the semiconductor film is represented by L (nm), the relational expression 0<Z<L=8×10?6×T3?0.0092×T2+3.6×T?468±0.1 is satisfied.

Abstract: There is provided a method of fabricating a field effect transistor including: forming a first oxide semiconductor film on a gate insulation layer disposed on a gate electrode; forming a second oxide semiconductor film on the first oxide semiconductor film, the second oxide semiconductor film differing in cation composition from the first oxide semiconductor film and being lower in electrical conductivity than the first oxide semiconductor film; applying a heat treatment at over 300° C. in an oxidizing atmosphere; forming a third oxide semiconductor film on the second oxide semiconductor film, the third oxide semiconductor film differing in cation composition from the first oxide semiconductor film and being lower in electrical conductivity than the first oxide semiconductor film; applying a heat treatment in an oxidizing atmosphere; and, forming a source electrode and a drain electrode on the third oxide semiconductor film.

Abstract: There is provided an amorphous oxide semiconductor material including an amorphous oxide semiconductor including In, Ga and Zn, wherein when In:Ga:Zn=a:b:c denotes an element composition ratio of the oxide semiconductor, the element composition ratio is defined by the range of a+b=2 and b<2 and c<4b?3.2 and c>?5b+8 and 1?c?2.

Abstract: There is provided a method of manufacturing a semiconductor element including: forming a semiconductor film of which a principal constituent is an oxide semiconductor; forming a first insulation film on a surface of the semiconductor film; applying a heat treatment in an oxidizing atmosphere; and, forming a second insulation film on a surface of the first insulation film, wherein a thickness of the first insulation film and a temperature of the heat treatment in the third step are adjusted such that, if the thickness of the first insulation film is represented by Z (nm), the heat treatment temperature is represented by T (° C.) and a diffusion distance of oxygen into the first insulation film and the semiconductor film is represented by L (nm), the relational expression 0<Z<L=8×10?6×T3?0.0092×T2+3.6×T?468±0.1 is satisfied.

Abstract: There is provided a method of fabricating a field effect transistor including: forming a first oxide semiconductor film on a gate insulation layer disposed on a gate electrode; forming a second oxide semiconductor film on the first oxide semiconductor film, the second oxide semiconductor film differing in cation composition from the first oxide semiconductor film and being lower in electrical conductivity than the first oxide semiconductor film; applying a heat treatment at over 300° C. in an oxidizing atmosphere; forming a third oxide semiconductor film on the second oxide semiconductor film, the third oxide semiconductor film differing in cation composition from the first oxide semiconductor film and being lower in electrical conductivity than the first oxide semiconductor film; applying a heat treatment in an oxidizing atmosphere; and, forming a source electrode and a drain electrode on the third oxide semiconductor film.

Abstract: A thin film transistor includes at least a gate electrode, a gate insulating film, an active layer, a source electrode and a drain electrode are provided on a substrate, with the source electrode and the drain electrode being provided on the active layer. The active layer is configured of an amorphous oxide semiconductor. A first amount of moisture present in the gate insulating film is smaller than a second amount of moisture present in the active layer.

Abstract: A method of manufacturing an electronic device includes: preparing a film-attached substrate including a substrate, and an oxide semiconductor film containing In, Ga, and Zn and a metal film containing at least one of W or Mo provided in this order on the substrate; and wet-etching the metal film of the film-attached substrate using an etching liquid of which a main component is hydrogen peroxide under conditions such that an etching selection ratio between the metal film and the oxide semiconductor film (etching rate of the metal film/etching rate of the oxide semiconductor film) is 100 or higher.

Abstract: A piezoelectric device includes a lower electrode, a piezoelectric film and an upper electrode laminated in this order on a support. An oxide film containing a material that forms a lower electrode is formed on a side surface of the piezoelectric film. The piezoelectric device is produced such that an upper electrode and a piezoelectric film are patterned by dry-etching through a mask formed on a side of the upper electrode of the piezoelectric device member and thereafter a side surface of the patterned piezoelectric film (a film adhered to a side wall) is oxidized to form an oxide film.