Abstract: A substrate processing method includes: increasing a temperature of a substrate by heating the substrate; after the increasing the temperature of the substrate, forming a liquid film of a pre-wetting liquid on a first surface of the substrate by supplying the pre-wetting liquid to the first surface of the substrate while heating and rotating the substrate at a first rotational speed; after the forming the liquid film, processing the first surface of the substrate with a chemical liquid by supplying the chemical liquid to the first surface of the substrate while heating and rotating the substrate at a second rotational speed that is lower than the second rotational speed; and after the processing the first surface of the substrate, decreasing the temperature of the substrate.

Abstract: A substrate processing method includes: increasing a temperature of a substrate by heating the substrate; after the increasing the temperature of the substrate, forming a liquid film of a pre-wetting liquid on a first surface of the substrate by supplying the pre-wetting liquid to the first surface of the substrate while heating and rotating the substrate at a first rotational speed; after the forming the liquid film, processing the first surface of the substrate with a chemical liquid by supplying the chemical liquid to the first surface of the substrate while heating and rotating the substrate at a second rotational speed that is lower than the second rotational speed; and after the processing the first surface of the substrate, decreasing the temperature of the substrate.

Abstract: A substrate processing apparatus includes: a processing chamber in which a substrate is processed with a processing liquid; a nozzle having a discharge port from which the processing liquid is discharged, the discharge port being formed in a distal end portion of the nozzle; a nozzle bath including an accommodation chamber formed therein, wherein the distal end portion of the nozzle is accommodated in the accommodation chamber at a standby time at which the processing liquid is not supplied to the substrate; a circulation line configured to return the processing liquid, which is discharged from the nozzle to the nozzle bath, to the nozzle; and a first restraint part configured to restrain a gas from flowing between an outside of the nozzle bath and the processing liquid present inside the nozzle bath when the processing liquid discharged from the nozzle to the nozzle bath is circulated to the nozzle.

Abstract: A substrate processing method includes: supplying a pre-wet liquid to a substrate while rotating the substrate, and forming a liquid film of the pre-wet liquid on a surface of the substrate; supplying a chemical liquid at a first flow rate to the substrate while the substrate is being rotated at a first rotation speed, and processing the substrate with the chemical liquid to form a liquid film of the chemical liquid having a first thickness on the surface of the substrate; and supplying the chemical liquid to the substrate at a second supply flow rate while the substrate is being rotated at a second rotation speed, and performing a second chemical liquid processing on the substrate with the chemical liquid to form a liquid film of the chemical liquid having a second thickness on the surface of the substrate.

Abstract: A substrate processing method includes: increasing a temperature of a substrate by heating the substrate; after the increasing the temperature of the substrate, forming a liquid film of a pre-wetting liquid on a first surface of the substrate by supplying the pre-wetting liquid to the first surface of the substrate while heating and rotating the substrate at a first rotational speed; after the forming the liquid film, processing the first surface of the substrate with a chemical liquid by supplying the chemical liquid to the first surface of the substrate while heating and rotating the substrate at a second rotational speed that is lower than the second rotational speed; and after the processing the first surface of the substrate, decreasing the temperature of the substrate.

Abstract: Provided is a substrate liquid processing apparatus that processes a substrate with a processing liquid. The substrate liquid processing apparatus includes: a processing liquid storage unit configured to store the processing liquid therein; a processing liquid heating unit configured to heat the processing liquid, a controller configured to control the processing liquid heating unit; a temperature sensor; and a concentration sensor connected to the controller. The controller is configured to: measure a concentration of the processing liquid with the concentration sensor, measure a temperature of the processing liquid with the temperature sensor, calculate a boiling point corresponding to the measured concentration of the processing liquid, and control the output of the processing liquid heating unit, based on the boiling point and the measured temperature of the processing liquid.

Abstract: There is provided a substrate processing apparatus including: a nozzle configured to eject a processing liquid onto a substrate; a standby section having an opening, wherein the nozzle is inserted into the opening to stand by in the standby section; a supply path through which the processing liquid is supplied to the nozzle; a discharge path through which the processing liquid is discharged from the standby section; a circulation path formed by connecting the nozzle, the standby section, the supply path, and the discharge path; and an atmospheric-blocking mechanism provided in the circulation path to block an inside of the circulation path and a surrounding of the substrate from each other.

Abstract: A substrate processing apparatus includes: a processing chamber in which a substrate is processed with a processing liquid; a nozzle having a discharge port from which the processing liquid is discharged, the discharge port being formed in a distal end portion of the nozzle; a nozzle bath including an accommodation chamber formed therein, wherein the distal end portion of the nozzle is accommodated in the accommodation chamber at a standby time at which the processing liquid is not supplied to the substrate; a circulation line configured to return the processing liquid, which is discharged from the nozzle to the nozzle bath, to the nozzle; and a first restraint part configured to restrain a gas from flowing between an outside of the nozzle bath and the processing liquid present inside the nozzle bath when the processing liquid discharged from the nozzle to the nozzle bath is circulated to the nozzle.

Abstract: Disclosed is a substrate processing apparatus (a substrate processing method, and a computer readable storage medium having a substrate processing program stored therein) of cleaning an etched substrate with a polymer removing liquid, in which any of isopropyl alcohol vapor, water vapor, deionized water and isopropyl alcohol, ammonia water, and ammonia water and isopropyl alcohol is supplied to the substrate before the substrate is cleaned with the polymer removing liquid.

Abstract: The present invention provides a chemical-liquid mixing method and a chemical-liquid mixing apparatus capable of sufficiently generating a peroxomonosulfuric acid that is effective in removing a resist from a substrate, when a sulfuric acid and a hydrogen peroxide solution are mixed with each other. At first, an inner tank 10 is filled up with a sulfuric acid and the sulfuric acid overflowing from the inner tank 10 is allowed to flow into an outer tank 12. Then, a hydrogen peroxide solution is supplied into the inner tank 10 and the hydrogen peroxide solution is allowed to flow into the outer tank 12 whereby the two kinds of liquids of the hydrogen peroxide solution and the sulfuric acid are stored in the outer tank 12. Simultaneously when the hydrogen peroxide solution flows into the outer tank 12, a return pump 16 is activated.

Abstract: The present invention provides a chemical-liquid mixing method and a chemical-liquid mixing apparatus capable of sufficiently generating a peroxomonosulfuric acid that is effective in removing a resist from a substrate, when a sulfuric acid and a hydrogen peroxide solution are mixed with each other. At first, an inner tank 10 is filled up with a sulfuric acid and the sulfuric acid overflowing from the inner tank 10 is allowed to flow into an outer tank 12. Then, a hydrogen peroxide solution is supplied Into the inner tank 10 and the hydrogen peroxide solution is allowed to flow into the outer tank 12 whereby the two kinds of liquids of the hydrogen peroxide solution and the sulfuric acid are stored in the outer tank 12. Simultaneously when the hydrogen peroxide solution flows into the outer tank 12, a return pump 16 is activated.

Abstract: Provided is a substrate liquid processing apparatus that processes a substrate with a processing liquid. The substrate liquid processing apparatus includes: a processing liquid storage unit configured to store the processing liquid therein; a processing liquid heating unit configured to heat the processing liquid, a controller configured to control the processing liquid heating unit; a temperature sensor; and a concentration sensor connected to the controller. The controller is configured to: measure a concentration of the processing liquid with the concentration sensor, measure a temperature of the processing liquid with the temperature sensor, calculate a boiling point corresponding to the measured concentration of the processing liquid, and control the output of the processing liquid heating unit, based on the boiling point and the measured temperature of the processing liquid.

Abstract: The present invention provides a chemical-liquid mixing method and a chemical-liquid mixing apparatus capable of sufficiently generating a peroxornonosulfuric acid that is effective in removing a resist from a substrate, when a sulfuric acid and a hydrogen peroxide solution are mixed with each other. At first, an inner tank 10 is filled up with a sulfuric acid and the sulfuric acid overflowing from the inner tank 10 is allowed to flow into an outer tank 12. Then, a hydrogen peroxide solution is supplied into the inner tank 10 and the hydrogen peroxide solution is allowed to flow into the outer tank 12 whereby the two kinds of liquids of the hydrogen peroxide solution and the sulfuric acid are stored in the outer tank 12. Simultaneously when the hydrogen peroxide solution flows into the outer tank 12, a return pump 16 is activated.

Abstract: Disclosed is a substrate processing apparatus (a substrate processing method, and a computer readable storage medium having a substrate processing program stored therein) of cleaning an etched substrate with a polymer removing liquid, in which any of isopropyl alcohol vapor, water vapor, deionized water and isopropyl alcohol, ammonia water, and ammonia water and isopropyl alcohol is supplied to the substrate before the substrate is cleaned with the polymer removing liquid.

Abstract: The present invention provides a chemical-liquid mixing method and a chemical-liquid mixing apparatus capable of sufficiently generating a peroxornonosulfuric acid that is effective in removing a resist from a substrate, when a sulfuric acid and a hydrogen peroxide solution are mixed with each other. At first, an inner tank 10 is filled up with a sulfuric acid and the sulfuric acid overflowing from the inner tank 10 is allowed to flow into an outer tank 12. Then, a hydrogen peroxide solution is supplied into the inner tank 10 and the hydrogen peroxide solution is allowed to flow into the outer tank 12 whereby the two kinds of liquids of the hydrogen peroxide solution and the sulfuric acid are stored in the outer tank 12. Simultaneously when the hydrogen peroxide solution flows into the outer tank 12, a return pump 16 is activated.

Abstract: The present invention provides a chemical-liquid mixing method and a chemical-liquid mixing apparatus capable of sufficiently generating a peroxomonosulfuric acid that is effective in removing a resist from a substrate, when a sulfuric acid and a hydrogen peroxide solution are mixed with each other. At first, an inner tank 10 is filled up with a sulfuric acid and the sulfuric acid overflowing from the inner tank 10 is allowed to flow into an outer tank 12. Then, a hydrogen peroxide solution is supplied into the inner tank 10 and the hydrogen peroxide solution is allowed to flow into the outer tank 12 whereby the two kinds of liquids of the hydrogen peroxide solution and the sulfuric acid are stored in the outer tank 12. Simultaneously when the hydrogen peroxide solution flows into the outer tank 12, a return pump 16 is activated.

Abstract: Provided are a substrate liquid processing apparatus, a substrate liquid processing method, and a computer readable storage medium having a substrate liquid processing program stored therein that can prevent the occurrence of the electrostatic breakdown caused by the discharge of electric charges in a substrate. The substrate liquid processing apparatus processes a circuit-forming surface of the substrate with a chemical liquid. Furthermore, prior to processing the substrate with the chemical liquid, the substrate liquid processing apparatus performs an anti-static process for an surface opposite to the circuit-forming surface of the substrate by an anti-static liquid, thereby emitting the electric charges on the substrate.

Abstract: In a liquid processing apparatus configured to remove, from a substrate including a first film and a second film formed above the first film, the first film and the second film, a first chemical-liquid supply part supplies, to a substrate W, a first liquid for dissolving the first film, a second chemical-liquid supply part supplies a second chemical liquid for weakening the second film, and a fluid supply part serving also as an impact giving part gives a physical impact to the second film so as to break the second film and supplies a fluid for washing away debris of the broken second film. A control device controls the respective parts such that, after the second liquid has been supplied and then the fluid has been supplied from the fluid supply part, the first chemical liquid is supplied.

Abstract: Provided are a substrate liquid processing apparatus, a substrate liquid processing method, and a computer readable storage medium having a substrate liquid processing program stored therein that can prevent the occurrence of the electrostatic breakdown caused by the discharge of electric charges in a substrate. The substrate liquid processing apparatus processes a circuit-forming surface of the substrate with a chemical liquid. Furthermore, prior to processing the substrate with the chemical liquid, the substrate liquid processing apparatus performs an anti-static process for an surface opposite to the circuit-forming surface of the substrate by an anti-static liquid, thereby emitting the electric charges on the substrate.

Abstract: In a liquid processing apparatus configured to remove, from a substrate including a first film and a second film formed above the first film, the first film and the second film, a first chemical-liquid supply part supplies, to a substrate W, a first liquid for dissolving the first film, a second chemical-liquid supply part supplies a second chemical liquid for weakening the second film, and a fluid supply part serving also as an impact giving part gives a physical impact to the second film so as to break the second film and supplies a fluid for washing away debris of the broken second film. A control device controls the respective parts such that, after the second liquid has been supplied and then the fluid has been supplied from the fluid supply part, the first chemical liquid is supplied.