Abstract: A cable includes a plurality of stranded wires substantially arranged annularly and each formed by twisting a plurality of conductor wires, and an inclusion disposed substantially at a center of the plurality of stranded wires. The inclusion includes spiral grooves, each of which being provided for fitting each of the stranded wires thereinto, that are each shaped according to a part of an outer surface of the stranded wires and separated by a dividing wall provided for preventing two adjacent stranded wires of the plurality of stranded wires from contacting each other.

Abstract: A cable having a cable structure comprising a stranded wire formed by stranding a plurality of stranded conductors and an inclusion that is more deformable than the stranded conductors, wherein a plurality of stranded conductors are arranged on a circumference of the inclusion.

Abstract: A sensor or actuator includes a piezoelectric thin film device including a lower electrode, a piezoelectric thin film and an upper electrode, and a voltage detecting device connected between the lower and upper electrodes of the piezoelectric thin film device. The piezoelectric thin film is formed of an alkali niobium oxide-based perovskite material expressed by (K1-xNax)NbO3 (0<x<1), and a dependency of the piezoelectric constant d31 of the piezoelectric thin film on applied electric field [=|(d31 under 70 kV/cm)?(d31 under 7 kV/cm)|/|d31 under 70 kV/cm|] is 0.20 or less.

Abstract: A substrate has a first thermal expansion coefficient and a piezoelectric thin film has a second thermal expansion coefficient. The piezoelectric thin film is mainly composed of a potassium sodium niobate (K,Na)NbO3 with a perovskite structure. A curvature radius of a warping of the substrate provided with the piezoelectric thin film due to difference between the first and the second thermal expansion coefficients is 10 m or more at room temperature. The piezoelectric thin film has a thickness of 0.2 ?m to 10 ?m. The piezoelectric thin film is oriented in one of plane orientations (001), (110), and (111).

Abstract: A piezoelectric thin film element includes a bottom electrode, a piezoelectric layer and a top electrode on a substrate. The piezoelectric layer includes as a main phase a perovskite-type oxide represented by (NaxKyLiz)NbO3 (0<x<1, 0<y<1, 0<z<0.2, x+y+z=1), and the bottom electrode includes a surface roughness of not more than 0.86 nm in arithmetic mean roughness Ra or not more than 1.1 nm in root mean square roughness Rms.

Abstract: A piezoelectric thin film device according to the present invention comprises a lower electrode, a piezoelectric thin film and an upper electrode, in which the piezoelectric thin film is formed of an alkali niobium oxide-based perovskite material expressed by (K1-xNax)NbO3 (0<x<1), and in which dependency of the piezoelectric constant d31 of the piezoelectric thin film on applied electric field [=|(d31 under 70 kV/cm)?(d31 under 7 kV/cm)|/|d31 under 70 kV/cm|] is 0.20 or less.

Abstract: A substrate has a first thermal expansion coefficient and a piezoelectric thin film has a second thermal expansion coefficient. The piezoelectric thin film is mainly composed of a potassium sodium niobate (K,Na)NbO3 with a perovskite structure. A curvature radius of a warping of the substrate provided with the piezoelectric thin film due to difference between the first and the second thermal expansion coefficients is 10 m or more at room temperature.

Abstract: A piezoelectric substance has a substrate, an electrode formed on the substrate, and a piezoelectric film formed on the electrode. The piezoelectric film is formed of crystals having a main phase of (NaxKyLiz)NbO3 (0<x<1, 0<y<1, 0?z?0.1, x+y+z=1). The piezoelectric film is a polycrystalline thin film preferentially oriented to either or both of <001> and <110> crystalline axes in the direction normal to the substrate surface, and the axes of its crystals oriented to each crystalline axis are also formed in the same direction in the in-plane direction of the substrate.

Abstract: A piezoelectric thin film element includes a substrate, a lower electrode, a piezoelectric thin film, and an upper electrode. The lower electrode, the piezoelectric thin film and the upper electrode are formed on the substrate. The piezoelectric thin film includes a polycrystal thin film including crystal grains, an alkali niobium oxide based perovskite structure represented by a general formula: (K1-xNax)NbO3 (0.4<x<0.7), a film thickness of not less than 1 ?m and not more than 10 ?m, a columnar structure configured by the crystal grains, a majority of the crystal grains including a shape in a cross-section direction thereof longer than in a plane direction of the substrate, and an average crystal grain size of not less than 0.1 ?m and not more than 1.0 ?m in the plane direction of the substrate.

Abstract: To smoothly deliver a thermal energy required in an active site of a catalyst carried on a carrier. A method of manufacturing a catalyst carrier of the present invention includes the steps of: forming a mixed thin film in which at least metal and ceramics are mixed on a metal base, by spraying aerosol, with metal powders and ceramics powders mixed therein, on the metal base; and making the mixed thin film porous, by dissolving the metal of the mixed thin film into acid or alkaline solution to remove this metal.

Abstract: A piezoelectric thin film device according to the present invention comprises a lower electrode, a piezoelectric thin film and an upper electrode, in which the piezoelectric thin film is formed of an alkali niobium oxide-based perovskite material expressed by (K1-xNax)NbO3 (0<x<1), and in which dependency of the piezoelectric constant d31 of the piezoelectric thin film on applied electric field [=|(d31 under 70 kV/cm)?(d31 under 7 kV/cm)|/|d31 under 70 kV/cm|] is 0. 20 or less.

Abstract: A piezoelectric thin film device according to the present invention comprises a lower electrode, a piezoelectric thin film and a upper electrode, in which the piezoelectric thin film is formed of an alkali niobium oxide-based perovskite material expressed by (K1-xNax)NbO3 (0 <x<1), and in which a (001)KNN plane diffraction peak of the piezoelectric thin film indicates an angle 2? from 22.1° to 22.5° in an X-ray diffraction 2?/? measurement to a surface of the piezoelectric thin film, and the (001)KNN plane diffraction peak occupies 80% or more of diffraction peaks of the piezoelectric thin film.

Abstract: A substrate has a first thermal expansion coefficient and a piezoelectric thin film has a second thermal expansion coefficient. The piezoelectric thin film is mainly composed of a potassium sodium niobate (K,Na)NbO3 with a perovskite structure. A curvature radius of a warping of the substrate provided with the piezoelectric thin film due to deference between the first and the second thermal expansion coefficients is 10 m or more at room temperature.

Abstract: A piezoelectric thin-film element formed with a niobate lithium potassium sodium thin-film having a well-developed Perovskite structure and having an excellent piezoelectric characteristic. The piezoelectric thin-film 4 is a dielectric thin-film composed of a alkaline-niobic oxide represented by (Nax1Ky1Liz1) NbO3 (0<x1<1, 0<y1<1, 0?z1<1, x1+y1+z1=1) and having a Perovskite structure, and the base dielectric thin film 6 composed of a alkaline-niobic oxide represented by (Nax2Ky2Liz2) NbO3 (0<x2<1, 0<y2<1, 0?z2<1, x2+y2+z2=1) and having a Perovskite structure is provided between the lower electrode 3 and the piezoelectric thin-film 4.

Abstract: A piezoelectric film formed above a Si substrate. The piezoelectric film is formed of a potassium sodium niobate expressed by a general formula (K,Na)NbO3 with perovskite structure. A film thickness of the piezoelectric film is within a range from 0.3 ?m to 10 ?m. An intermediate film is formed between the Si substrate and the piezoelectric film. The intermediate film generates a stress in a compressive direction in the piezoelectric film.

Abstract: A piezoelectric substance has a substrate, an electrode formed on the substrate, and a piezoelectric film formed on the electrode. The piezoelectric film is formed of crystals having a main phase of (NaxKyLiz)NbO3 (0<x<1, 0<y<1, 0?z?0.1, x+y+z=1). The piezoelectric film is a polycrystalline thin film preferentially oriented to either or both of <001> and <110> crystalline axes in the direction normal to the substrate surface, and the axes of its crystals oriented to each crystalline axis are also formed in the same direction in the in-plane direction of the substrate.

Abstract: A piezoelectric thin-film element formed with a niobate lithium potassium sodium thin-film having a well-developed Perovskite structure and having an excellent piezoelectric characteristic. The piezoelectric thin-film 4 is a dielectric thin-film composed of a alkaline-niobic oxide represented by (Nax1Ky1Liz1) NbO3 (0<x1<1, 0<y1<1, 0?z1<1, x1+y1+z1=1) and having a Perovskite structure, and the base dielectric thin film 6 composed of a alkaline-niobic oxide represented by (Nax2Ky2Liz2) NbO3 (0<x2<1, 0<y2<1, 0?z2<1, x2+y2+z2=1) and having a Perovskite structure is provided between the lower electrode 3 and the piezoelectric thin-film 4.

Abstract: A transparent electrode is provided on a glass substrate, and an amorphous silicon layer is provided on the transparent electrode. A nickel layer as a metal catalyst element is provided in or so as to contact with the surface of the amorphous silicon layer, followed by heat treatment to crystallize the amorphous silicon layer, thereby forming a p-type polycrystalline silicon layer. This polycrystalline silicon layer is crystallographically oriented and has high crystallinity. The polycrystalline silicon layer is used as a seed crystal to form a p-type polycrystalline silicon layer which is crystallographically oriented and, at the same time, has high crystallinity. Further, an i-type polycrystalline silicon layer and an n-type polycrystalline silicon layer are successively formed on the polycrystalline silicon layer.

Abstract: Concave and convex are formed on the substrate 1, the amorphous silicon layer 4 is formed on the metallic catalyst 3 dispersed and arranged in a dotted shape in the concave portion of the concave and convex, the crystal phases 5 having respective orientations from the metallic catalyst 3 are grown, further the crystal phases 5 are integrated with each other by continuing heat treatment and the polycrystalline silicon layer 6 is formed. A crystalline silicon semiconductor device and its method for fabrication which are costly advantageous and capable of efficiently forming the polycrystalline silicon layer of a predetermined thickness needed as a semiconductor device are provided.

Abstract: A plurality of linear catalytic metal element portions are arranged at predetermined intervals just on or just beneath an amorphous silicon layer, and, in this state, the amorphous silicon layer is heat treated to crystallize the amorphous silicon layer and consequently to form a polycrystalline silicon layer. This construction can realize the provision of a method for the formation of an evenly oriented, high-quality crystalline silicon layer in a large area, and a crystalline silicon semiconductor device produced by this method.