Abstract: The present invention pertains to a fungicide that causes little environmental pollution and has excellent safety, a fungicide product having a fungicide layer containing said fungicide, and a fungicidal coating containing said fungicide, the fungicide being represented by formula (1) Ln2xFe2(1-x)O3 (in formula (1), Ln is a rare earth element selected from the group consisting of lanthanum, praseodymium, neodymium and yttrium; and x is a number that is at least 0.45 and is less than 1.00).

Abstract: Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode.

Abstract: Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode.

Abstract: Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode.

Abstract: Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode.

Abstract: Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode.

Abstract: Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode.

Abstract: A spout-equipped container (100) that is used to refill a refillable container with a content material includes a refill container spout (1) and a flexible container body portion (2). The container body portion (2) contains the content material. The refill container spout (1) includes a tubular nozzle portion (11) that brings the inside and outside of the container body portion (2) into communication with each other, and a fixing portion (19) that is fixedly attached to the container body portion (2). The nozzle portion (11) includes a throttle projection (14) that protrudes toward a center of the nozzle portion (11) on an inner surface (11c) side in a lower portion (C) that is one of three equal parts obtained by dividing the nozzle portion in a height direction of the nozzle portion. The throttle projection (14) forms, on a leading end side in a protrusion direction of the throttle projection (14), a flow path through which the content material passes.

Abstract: Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode.

Abstract: A coating apparatus for forming a high-resistance film on the inner surface of the neck of the funnel of a cathode ray tube has a nozzle that can be inserted into the neck. The nozzle, which is provided for applying a material liquid to the inner surface of the neck, has a jet hole inclined toward the direction of gravity. The material liquid applied through the jet hole thus inclined scarcely flows upwardly on the inner surface of the neck. The liquid therefore forms a high-resistance film having a uniform thickness on the inner surface of the neck of the funnel. Having a uniform thickness, the high-resistance film inhibits the charge-up of the neck potential, reducing the convergence drift caused by the charge-up of the neck potential.

Abstract: A cathode ray tube according to the invention comprises an internal conductive film arranged on the inner wall surface of the envelope and extending from the funnel section to the neck section and a high resistance conductive film arranged in the neck section to contact the internal conductive film at an end of thereof and surround part of the electron gun assembly. The high resistance conductive film shows an electric resistance higher than that of the internal conductive film. Additionally, in a cathode ray tube according to the invention, the electric resistance of the high resistance conductive film in terms of per unit length along the axis of the tube is lower at and near the contact region held in contact with the corresponding end of the internal conductive film than at and near the opposite end of the high resistance conductive film.

Abstract: A high-resistance film having a plurality of pores and a resistance of 10.sup.10 to 10.sup.14 .OMEGA. is formed on the inner wall of the neck from a position where the high-resistance film contacts the inner conductive film to at least part of the inner wall surrounding at least the space between the grid farthest from a cathode to the grid second farthest from the cathode.

Abstract: Disclosed is a color cathode ray tube including an in-line electron gun, in which a high-resistance film whose resistance R at T.degree.C. has a resistance-temperature characteristic represented by d(Log R(T))/dT.gtoreq.-0.01 at least at a temperature ranging from 20.degree. C. to 40.degree. C. and is approximately 5.times.10.sup.13 .OMEGA. or less at about 25.degree. C. is formed on the inner wall of the neck.

Abstract: The electron gun assembly for cathode ray tube, has the structure in which the first, second and third grids are arranged in the traveling direction of an electron beam emitted from cathodes, and so is the fourth grid to which a anode voltage is applied, a suppressing ring is provided to be adjacent to the second and third grids, a dynamic focus voltage which is varied in synchronism with the deflection of the electron beam is applied to the first and third grids, and the first and second grids are connected to each other by means of the resistor provided adjacent thereto.