Abstract: In a composite sensor, an arrangement region of thermal image sensors and an arrangement region of range image sensors are arranged so as to overlap each other as seen in the mounting direction. This makes it possible to acquire thermal and range images coaxially, thereby suppressing image misalignment between the thermal and range images. In the composite sensor, a seal body formed by mounting the first and second substrates on top of each other seals a space about the thermal image sensors in a vacuum state. This can prevent the heat occurring about the range image sensors from affecting the thermal image sensor side. In addition, the substrate arranged with the thermal image sensors and the substrate arranged with the range image sensors are separate from each other, which can secure a degree of freedom in designing.

Abstract: In a composite sensor, an arrangement region of thermal image sensors and an arrangement region of range image sensors are arranged so as to overlap each other as seen in the mounting direction. This makes it possible to acquire thermal and range images coaxially, thereby suppressing image misalignment between the thermal and range images. In the composite sensor, a seal body formed by mounting the first and second substrates on top of each other seals a space about the thermal image sensors in a vacuum state. This can prevent the heat occurring about the range image sensors from affecting the thermal image sensor side. In addition, the substrate arranged with the thermal image sensors and the substrate arranged with the range image sensors are separate from each other, which can secure a degree of freedom in designing.

Abstract: An infrared detector 1 having a bolometer element 11 and a reference element 21 is provided with a bolometer thin film 22 supported on a surface of a substrate 10while spaced apart from the surface of the substrate 10, a metal film 23 for heat dissipation formed on a surface of the bolometer thin film 22 via an insulating film 31, wherein the surface of the bolometer thin film 22 faces the substrate 10, and a plurality of metal columns 25 connected thermally with the metal film 23 for heat dissipation and the substrate 10. Since heat generated from a photodetecting portion 22aby infrared rays is efficiently dissipated to the substrate 10 via the insulating film 31, the metal film 23 for heat dissipation, the metal columns 25, and a metal film 24 for heat dissipation on the side of the substrate, only temperature variation caused by variation in use environment can be measured accurately, and downsizing can be achieved while reducing the influence of temperature variation in use environment.

Abstract: The infrared ray absorbing film 2 is provided with a first layer 21 containing TiN and a second layer 22 containing an Si based compound, converting energy of infrared ray made incident from the second layer 22 to heat. TiN is high in absorption rate of infrared ray over a wavelength range shorter than 8 ?m, while high in reflection rate of infrared ray over a wavelength range longer than 8 ?m. Therefore, if an Si based compound layer excellent in absorption rate of infrared ray over a longer wavelength range is laminated on a TiN layer, infrared ray over a wavelength range lower in absorption rate on the TiN layer can be favorably absorbed on the Si based compound layer, and also infrared ray in an attempt to transmit the Si based compound layer can be reflected on a boundary surface of the TiN layer and returned to the Si based compound layer.

Abstract: In an infrared sensor (1) having a bolometer element (11) and a reference element (21), the reference element (21) comprises a bolometer film (22), a substrate-side insulating film (31) formed on the substrate-side surface of the bolometer film (22), a heat dissipation film (23) made of amorphous silicon formed on the substrate-side surface of the bolometer film (22) with the substrate-side insulating film (31) interposed therebetween, and a plurality of heat dissipation columns (25) made of amorphous silicon thermally connected to the heat dissipation film (23) and a substrate (10), while the bolometer film (22) and substrate-side insulating film (31) are formed such as to extend over a side face of the heat dissipation film (23) intersecting a surface of the substrate (10). Thus configured infrared sensor (1) can efficiently reduce the influence of temperature changes in the environment in use, while being made smaller.

Abstract: In an infrared sensor (1) having a bolometer element (11) and a reference element (21), the reference element (21) comprises a bolometer film (22), a substrate-side insulating film (31) formed on the substrate-side surface of the bolometer film (22), a heat dissipation film (23) made of amorphous silicon formed on the substrate-side surface of the bolometer film (22) with the substrate-side insulating film (31) interposed therebetween, and a plurality of heat dissipation columns (25) made of amorphous silicon thermally connected to the heat dissipation film (23) and a substrate (10), while the bolometer film (22) and substrate-side insulating film (31) are formed such as to extend over a side face of the heat dissipation film (23) intersecting a surface of the substrate (10). Thus configured infrared sensor (1) can efficiently reduce the influence of temperature changes in the environment in use, while being made smaller.

Abstract: An infrared detector (1) having a bolometer element (11) and a reference element (21) is provided with a bolometer thin film (22) supported on a surface of a substrate (10) while spaced apart from the surface of the substrate (10), a metal film (23) for heat dissipation formed on the substrate (10)-side surface of the bolometer thin film (22) through an insulating film (31), and a plurality of metal columns (25) connected thermally with the metal film (23) for heat dissipation and the substrate (10). Since heat generated from a light receiving portion (22a) by infrared rays is dissipated efficiently to the substrate (10) through the insulating film (31), the metal film (23) for heat dissipation, the metal columns (25), and a metal film (24) for heat dissipation on the side of the substrate, only temperature variation caused by variation in use environment can be measured accurately, and downsizing can be achieved while reducing the influence of temperature variation in use environment efficiently.

Abstract: The infrared ray absorbing film 2 is provided with a first layer 21 containing TiN and a second layer 22 containing an Si based compound, converting energy of infrared ray made incident from the second layer 22 to heat. TiN is high in absorption rate of infrared ray over a wavelength range shorter than 8 ?m, while high in reflection rate of infrared ray over a wavelength range longer than 8 ?m. Therefore, if an Si based compound layer excellent in absorption rate of infrared ray over a longer wavelength range is laminated on a TiN layer, infrared ray over a wavelength range lower in absorption rate on the TiN layer can be favorably absorbed on the Si based compound layer, and also infrared ray in an attempt to transmit the Si based compound layer can be reflected on a boundary surface of the TiN layer and returned to the Si based compound layer.