Patents by Inventor Fumiko Yamashita
Fumiko Yamashita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10923329Abstract: An apparatus for processing reaction products that are deposited when an etching target film contained in a target object to be processed is etched is provided with: a processing chamber; a partition plate; a plasma source; a mounting table; a first processing gas supply unit; a second processing gas supply unit. The processing chamber defines a space, and the partition plate is arranged within the processing chamber and divides the space into a plasma generating space and a substrate processing space, while suppressing permeation of ions and vacuum ultraviolet rays. The plasma source generates a plasma in the plasma forming space. The mounting table is arranged in the substrate processing space to mount the target object thereon.Type: GrantFiled: September 11, 2019Date of Patent: February 16, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Eiichi Nishimura, Akitaka Shimizu, Fumiko Yamashita, Daisuke Urayama
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Publication number: 20200111646Abstract: An apparatus for processing reaction products that are deposited when an etching target film contained in a target object to be processed is etched is provided with: a processing chamber; a partition plate; a plasma source; a mounting table; a first processing gas supply unit; a second processing gas supply unit. The processing chamber defines a space, and the partition plate is arranged within the processing chamber and divides the space into a plasma generating space and a substrate processing space, while suppressing permeation of ions and vacuum ultraviolet rays. The plasma source generates a plasma in the plasma forming space. The mounting table is arranged in the substrate processing space to mount the target object thereon.Type: ApplicationFiled: September 11, 2019Publication date: April 9, 2020Applicant: TOKYO ELECTRON LIMITEDInventors: Eiichi NISHIMURA, Akitaka SHIMIZU, Fumiko YAMASHITA, Daisuke URAYAMA
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Patent number: 9882124Abstract: An etching method is provided for etching a multilayer film material that includes a metal laminated film having an insulating layer arranged between a first magnetic layer and a second magnetic layer. The etching method includes an etching step of generating a plasma by supplying a first gas to a processing chamber and etching the metal laminated film using the generated plasma. The first gas is a gas containing PF3 gas.Type: GrantFiled: February 9, 2015Date of Patent: January 30, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Eiichi Nishimura, Akitaka Shimizu, Fumiko Yamashita
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Patent number: 9691643Abstract: An etching apparatus includes a controller configured to control a high frequency power supply to supply a high frequency power to a mounting table for etching a polymer layer formed on a base layer placed on the mounting table, using plasma generated from a predetermined gas supplied from a gas supply source by the high frequency power, the polymer layer having a periodic pattern of a first polymer and a second polymer formed by self-assembling the first polymer and the second polymer of a block copolymer that is capable of being self-assembled, the high frequency power being set for etching the polymer layer using the generated plasma such that the second polymer is removed and a pattern of the first polymer is formed for subsequently etching the base layer using the pattern of the first polymer as a mask.Type: GrantFiled: September 29, 2014Date of Patent: June 27, 2017Assignee: Tokyo Electron LimitedInventors: Eiichi Nishimura, Tadashi Kotsugi, Fumiko Yamashita
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Patent number: 9660182Abstract: A plasma processing method of etching a multilayered material having a structure where a first magnetic layer 105 and a second magnetic layer 103 are stacked with an insulating layer 104 therebetween is performed by a plasma processing apparatus 10 including a processing chamber 12 where a processing space S is formed; and a gas supply unit 44 of supplying a processing gas into the processing space, and includes a first etching process where the first magnetic layer is etched by supplying a first processing gas and generating plasma, and the first etching process is stopped on a surface of the insulating layer; and a second etching process where a residue Z is removed by supplying a second processing gas and generating plasma. The first magnetic layer and the second magnetic layer contain CoFeB, the first processing gas contains Cl2, and the second processing gas contains H2.Type: GrantFiled: April 22, 2013Date of Patent: May 23, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Takashi Sone, Daisuke Urayama, Masato Kushibiki, Nao Koizumi, Wataru Kume, Eiichi Nishimura, Fumiko Yamashita
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Patent number: 9419211Abstract: A gas for an etching process and a treatment process of a metal stacked film in which an insulating layer is interposed between two layers of magnetic materials can be optimized. An etching method of etching a multilayered film including a metal stacked film in which an insulating layer is interposed between a first magnetic layer and a second magnetic layer includes etching the metal stacked film with plasma generated by supplying a gas containing at least C, O, and H into a processing chamber; and treating the metal stacked film with plasma generated by supplying a gas containing at least a CF4 gas into the processing chamber.Type: GrantFiled: October 29, 2013Date of Patent: August 16, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Eiichi Nishimura, Masato Kushibiki, Nao Koizumi, Takashi Sone, Fumiko Yamashita
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Patent number: 9412618Abstract: A pattern forming method of forming a pattern on an underlying layer of a target object includes forming a block copolymer layer, which includes a first polymer and a second polymer and is configured to be self-assembled, on the underlying layer; processing the target object to form a first region containing the first polymer and a second region containing the second polymer in the block copolymer layer; etching the second region partway in a thickness direction thereof in a capacitively coupled plasma processing apparatus after the processing of the target object; generating secondary electrons from an upper electrode of the plasma processing apparatus by applying a negative DC voltage to the upper electrode and irradiating the secondary electrons onto the target object, after the etching of the second region; and additionally etching the second region in the plasma processing apparatus after the irradiating of the secondary electrons.Type: GrantFiled: April 9, 2014Date of Patent: August 9, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Shinya Morikita, Eiichi Nishimura, Fumiko Yamashita
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Publication number: 20160203998Abstract: Provided is a method of etching an etching target layer of a workpiece. The method includes forming a self-assemblable block copolymer layer containing a first polymer and a second polymer on an intermediate layer formed on the etching target layer; processing the workpiece to form a first region containing the first polymer and a second region containing the second polymer, from the block copolymer layer; after the processing the workpiece, forming a mask by etching the second region and the intermediate layer just below the second region; after the forming the mask, forming a protective film on the mask by generating plasma of a processing gas containing silicon tetrachloride gas and oxygen gas within a processing container of a plasma processing apparatus that accommodates the workpiece; and after the forming the protective film, etching the etching target layer.Type: ApplicationFiled: September 2, 2014Publication date: July 14, 2016Applicant: TOKYO ELECTRON LIMITEDInventors: Toshikatsu TOBANA, Fumiko YAMASHITA
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Publication number: 20160042970Abstract: A pattern forming method of forming a pattern on an underlying layer of a target object includes forming a block copolymer layer, which includes a first polymer and a second polymer and is configured to be self-assembled, on the underlying layer; processing the target object to form a first region containing the first polymer and a second region containing the second polymer in the block copolymer layer; etching the second region partway in a thickness direction thereof in a capacitively coupled plasma processing apparatus after the processing of the target object; generating secondary electrons from an upper electrode of the plasma processing apparatus by applying a negative DC voltage to the upper electrode and irradiating the secondary electrons onto the target object, after the etching of the second region; and additionally etching the second region in the plasma processing apparatus after the irradiating of the secondary electrons.Type: ApplicationFiled: April 9, 2014Publication date: February 11, 2016Inventors: Shinya Morikita, Eiichi Nishimura, Fumiko Yamashita
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Patent number: 9245764Abstract: This semiconductor device manufacturing method is provided with: a film-forming step wherein a silicon nitride layer or a silicon oxide layer is formed such that a side wall portion of a silicon-containing layer, which is formed on a substrate and patterned, is covered with the silicon nitride layer or the silicon oxide layer; and a plasma etching step wherein the silicon-containing layer is selectively removed, and the silicon nitride layer or the silicon oxide layer formed on the side wall portion is left. In the plasma etching step, an etching gas containing SF6 gas is used.Type: GrantFiled: November 16, 2012Date of Patent: January 26, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Eiichi Nishimura, Tadashi Kotsugi, Fumiko Yamashita, Kenji Adachi
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Patent number: 9234083Abstract: A method for causing a first polymer and a second polymer of a block copolymer to be self-assembled on an underlayer film and forming a periodic pattern in a guide layer is provided. The method includes a first etching process of etching the second polymer by plasma generated from a first gas, a first film deposition process of depositing a first protective film on surfaces of the first polymer and the guide layer except for an etched portion of the second polymer by plasma generated from a second gas after the first etching process, and a second etching process of further etching the second polymer by the plasma generated from the first gas after the first film deposition process.Type: GrantFiled: March 21, 2013Date of Patent: January 12, 2016Assignee: Tokyo Electron LimitedInventors: Eiichi Nishimura, Fumiko Yamashita, Satoko Niitsuma
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Patent number: 9208997Abstract: A method of etching a copper layer of a target object including, on the copper layer, a mask having a pattern to be transferred onto the copper layer is provided. The method includes etching the copper layer by using plasma of a first gas containing a hydrogen gas; and processing the target object by using plasma of a second gas containing a hydrogen gas and a gas (hereinafter, referred to as “deposition gas”) that is deposited on the target object. Further, the etching of the copper layer by using plasma of the first gas and the processing of the target object by using plasma of the second gas are repeated alternately.Type: GrantFiled: October 21, 2013Date of Patent: December 8, 2015Assignee: TOKYO ELECTRON LIMITEDInventors: Eiichi Nishimura, Masato Kushibiki, Takashi Sone, Akitaka Shimizu, Fumiko Yamashita
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Patent number: 9177781Abstract: A plasma processing method in which performing a plasma etching on metal layers formed on a substrate is conducted to form a pattern having the metal layers in a stacked structure, and then a deposit containing a metal that forms the metal layers and being deposited on a sidewall portion of the pattern is removed, the method includes: forming a protective layer by forming an oxide or chloride of the metal on sidewall portions of the metal layers; removing the deposit by applying a plasma of a gas containing fluorine atoms; and reducing the oxide or chloride of the metal by applying a plasma containing hydrogen after forming the protective layer and removing the deposit.Type: GrantFiled: July 8, 2011Date of Patent: November 3, 2015Assignees: TOKYO ELECTRON LIMITED, KABUSHIKI KAISHA TOSHIBAInventors: Shigeru Tahara, Eiichi Nishimura, Fumiko Yamashita, Hiroshi Tomita, Tokuhisa Ohiwa, Hisashi Okuchi, Mitsuhiro Omura
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Patent number: 9165784Abstract: Disclosed is a substrate processing method capable of preventing an etching rate from being deteriorated when a high aspect ratio hole or trench is formed on an oxide film. When a high aspect ratio hole or trench is formed on an oxide film by etching the oxide film formed on a wafer using a hard mask layer having an opening and made of silicon, the oxide film corresponding to the opening is etched using plasma generated from a processing gas containing a C4F6 gas and a methane gas. Subsequently, a reactive product generated by the etching and deposited on an inner surface of the hole of the oxide film is ashed with plasma generated from a processing gas containing an oxygen gas, and the etching and the ashing processes are repeated in sequence.Type: GrantFiled: March 23, 2012Date of Patent: October 20, 2015Assignee: TOKYO ELECTRON LIMITEDInventors: Eiichi Nishimura, Masato Kushibiki, Fumiko Yamashita
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Patent number: 9150969Abstract: In a method of etching a metal layer of an object to be processed, the metal layer is etched by ion sputtering etching while forming a protective film containing carbon on a surface of a mask of the object. The object is exposed to an oxygen plasma after etching the metal layer. The object is exposed to hexafluoroacetylacetone after exposing the object to the oxygen plasma.Type: GrantFiled: March 4, 2014Date of Patent: October 6, 2015Assignee: TOKYO ELECTRON LIMITEDInventors: Eiichi Nishimura, Fumiko Yamashita, Koyumi Sasa
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Publication number: 20150214474Abstract: An etching method is provided for etching a multilayer film material that includes a metal laminated film having an insulating layer arranged between a first magnetic layer and a second magnetic layer. The etching method includes an etching step of generating a plasma by supplying a first gas to a processing chamber and etching the metal laminated film using the generated plasma. The first gas is a gas containing PF3 gas.Type: ApplicationFiled: February 9, 2015Publication date: July 30, 2015Inventors: Eiichi NISHIMURA, Akitaka SHIMIZU, Fumiko YAMASHITA
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Publication number: 20150132970Abstract: An apparatus for processing reaction products that are deposited when an etching target film contained in a target object to be processed is etched is provided with: a processing chamber; a partition plate; a plasma source; a mounting table; a first processing gas supply unit; a second processing gas supply unit. The processing chamber defines a space, and the partition plate is arranged within the processing chamber and divides the space into a plasma generating space and a substrate processing space, while suppressing permeation of ions and vacuum ultraviolet rays. The plasma source generates a plasma in the plasma forming space. The mounting table is arranged in the substrate processing space to mount the target object thereon.Type: ApplicationFiled: April 16, 2013Publication date: May 14, 2015Applicant: TOKYO ELECTRON LIMITEDInventors: Eiichi Nishimura, Akitaka Shimizu, Fumiko Yamashita, Daisuke Urayama
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Publication number: 20150079790Abstract: This semiconductor device manufacturing method is provided with: a film-forming step wherein a silicon nitride layer or a silicon oxide layer is formed such that a side wall portion of a silicon-containing layer, which is formed on a substrate and patterned, is covered with the silicon nitride layer or the silicon oxide layer; and a plasma etching step wherein the silicon-containing layer is selectively removed, and the silicon nitride layer or the silicon oxide layer formed on the side wall portion is left. In the plasma etching step, an etching gas containing SF6 gas is used.Type: ApplicationFiled: November 16, 2012Publication date: March 19, 2015Applicant: TOKYO ELECTRON LIMITEDInventors: Eiichi Nishimura, Tadashi Kotsugi, Fumiko Yamashita, Kenji Adachi
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Publication number: 20150050750Abstract: A plasma processing method of etching a multilayered material having a structure where a first magnetic layer 105 and a second magnetic layer 103 are stacked with an insulating layer 104 therebetween is performed by a plasma processing apparatus 10 including a processing chamber 12 where a processing space S is formed; and a gas supply unit 44 of supplying a processing gas into the processing space, and includes a first etching process where the first magnetic layer is etched by supplying a first processing and generating plasma, and the first etching process is stopped on a surface of the insulating layer; and a second etching process where a residue Z is removed by supplying a second processing gas and generating plasma. The first magnetic layer and the second magnetic layer contain CoFeB, the first processing gas contains Cl2, and the second processing gas contains H2.Type: ApplicationFiled: April 22, 2013Publication date: February 19, 2015Applicant: Tokyo Electron LimitedInventors: Takashi Sone, Daisuke Urayama, Masato Kushibiki, Nao Koizumi, Wataru Kume, Eiichi Nishimura, Fumiko Yamashita
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Publication number: 20150048049Abstract: A method for causing a first polymer and a second polymer of a block copolymer to be self-assembled on an underlayer film and forming a periodic pattern in a guide layer is provided. The method includes a first etching process of etching the second polymer by plasma generated from a first gas, a first film deposition process of depositing a first protective film on surfaces of the first polymer and the guide layer except for an etched portion of the second polymer by plasma generated from a second gas after the first etching process, and a second etching process of further etching the second polymer by the plasma generated from the first gas after the first film deposition process.Type: ApplicationFiled: March 21, 2013Publication date: February 19, 2015Inventors: Eiichi Nishimura, Fumiko Yamashita, Satoko Niitsuma