Abstract: An electrostatic chuck cleaning process that cleans an electrostatic chuck, equipped in a chamber, for chucking and holding a substrate. This method has a plasma etching process that performs plasma etching on the electrostatic chuck, a substrate mounting process that mounts a substrate on the electrostatic chuck that was subjected to plasma etching in the plasma etching process, and a substrate removal process that removes the substrate that was mounted on the electrostatic chuck in the substrate mounting process.

Abstract: An electrostatic chuck cleaning process that cleans an electrostatic chuck, equipped in a chamber, for chucking and holding a substrate. This method has a plasma etching process that performs plasma etching on the electrostatic chuck, a substrate mounting process that mounts a substrate on the electrostatic chuck that was subjected to plasma etching in the plasma etching process, and a substrate removal process that removes the substrate that was mounted on the electrostatic chuck in the substrate mounting process.

Abstract: An electrostatic chuck cleaning process that cleans an electrostatic chuck, equipped in a chamber, for chucking and holding a substrate. This method has (1) a plasma etching process that performs plasma etching on the electrostatic chuck, (2) a substrate mounting process that mounts a substrate on the electrostatic chuck that was subjected to plasma etching in the plasma etching process, and (3) a substrate removal process that removes the substrate that was mounted on the electrostatic chuck in the substrate mounting process.

Abstract: The present invention is a substrate support method wherein a voltage is applied to the electrostatic chuck of a substrate support apparatus equipped in a chamber, thereby using a coulomb force to adsorb and support a substrate mounted on the semiconductor chuck. This substrate support method includes (1) a voltage increasing step that increases the voltage applied to the electrostatic chuck from a base value to a first value that is required for adsorbing the substrate, and (2) a first voltage maintenance step that maintains at the first value the voltage that was increased in the voltage increasing step, and (3) the voltage is increased in steps in the voltage increasing step from the base value to the first value.

Abstract: An electrostatic chuck cleaning process that cleans an electrostatic chuck, equipped in a chamber, for chucking and holding a substrate. This method has (1) a plasma etching process that performs plasma etching on the electrostatic chuck, (2) a substrate mounting process that mounts a substrate on the electrostatic chuck that was subjected to plasma etching in the plasma etching process, and (3) a substrate removal process that removes the substrate that was mounted on the electrostatic chuck in the substrate mounting process.