Patents by Inventor Fuminori Itoh

Fuminori Itoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7968471
    Abstract: The present invention provides a process of producing a porous insulating film effective as an insulating film constituting a semiconductor device and a process of producing a porous insulating film having high adhesion to a semiconductor material, which is in contact with the upper and lower interfaces of the insulating film. Gas containing molecule vapor of at least one or more organic silica compounds, which have a cyclic silica skeleton in its molecule and have at least one or more unsaturated hydrocarbon groups bound with the cyclic silica skeleton is introduced into plasma to grow a porous insulating film on a semiconductor substrate.
    Type: Grant
    Filed: November 29, 2004
    Date of Patent: June 28, 2011
    Assignee: NEC Corporation
    Inventors: Yoshimichi Harada, Yoshihiro Hayashi, Fuminori Itoh, Kenichiro Hijioka, Tsuneo Takeuchi
  • Publication number: 20070093078
    Abstract: The present invention provides a process of producing a porous insulating film effective as an insulating film constituting a semiconductor device and a process of producing a porous insulating film having high adhesion to a semiconductor material, which is in contact with the upper and lower interfaces of the insulating film. Gas containing molecule vapor of at least one or more organic silica compounds, which have a cyclic silica skeleton in its molecule and have at least one or more unsaturated hydrocarbon groups bound with the cyclic silica skeleton is introduced into plasma to grow a porous insulating film on a semiconductor substrate.
    Type: Application
    Filed: November 29, 2004
    Publication date: April 26, 2007
    Inventors: Yoshimichi Harada, Yoshihiro Hayashi, Fuminori Itoh, Kenichiro Hijoka, Tsuneo Takeuchi
  • Patent number: 6780075
    Abstract: A method of fabricating a nano-tube that enables shortly cutting off the nano-tube without deteriorating the same and that when the nano-tube is used as the emitter can provide an improved flat-ability of the surface of the emitter, a method of manufacturing a field-emission type cold cathode that can provide an improved flat-ability of the surface of the emitter and that resultantly can cause an emission of a uniform, stable high-emission electric current, and a method of manufacturing a display device that includes a method of fabricating a nano-tube and/or a method of manufacturing a field-emission type cold cathode. The method of fabricating a nano-tube according to the present invention includes the step of radiating ions into a nano-tube and the step of oxidizing the nano-tube.
    Type: Grant
    Filed: December 22, 2000
    Date of Patent: August 24, 2004
    Assignee: NEC Corporation
    Inventors: Akihiko Okamoto, Fuminori Itoh
  • Publication number: 20010006869
    Abstract: Disclosed is a method of fabricating a nano-tube that enables shortly cutting off said nano-tube without deteriorating said same and that when said nano-tube is used as said emitter can provide an improved flat-ability of said surface of said emitter, a method of manufacturing a field-emission type cold cathode that can provide an improved flat-ability of said surface of said emitter and that resultantly can cause an emission of a uniform, stable high-emission electric current, and a method of manufacturing a display device that includes a method of fabricating a nano-tube and/or a method of manufacturing a field-emission type cold cathode. The method of fabricating a nano-tube according to said present invention includes said step of radiating ions 2 onto a nano-tube 1 and said step of oxidizing said nano-tube 1.
    Type: Application
    Filed: December 22, 2000
    Publication date: July 5, 2001
    Inventors: Akihiko Okamoto, Fuminori Itoh