Abstract: A photomask includes a resolution pattern, and a non-resolution pattern. The non-resolution pattern has a center portion and first and second side portions. The first and second side portions are each greater in distance from the resolution pattern than the center portion.

Abstract: A method of manufacturing a semiconductor device of the present invention has the steps of forming a pattern made of a processed film or a resist on a substrate, washing the pattern with a washing liquid which is a liquid including at least water, spreading an amphiphilic material that has a hydrophilic group and a hydrophobic group on the surface of the washing liquid remaining on the substrate after washing the pattern, and drying the substrate to remove the washing liquid on the substrate after spreading the amphiphilic material. When moisture is removed in the drying step, molecules of the amphiphilic material are spread on the surface of the washing liquid, so that the surface tension of the washing liquid is reduced to prevent the pattern from inclining.

Abstract: Improved efficiency of address/data communication over a memory bus. A memory-control device is located between a processor 30 and memory ranks 40a, 40b and controls access to the memory ranks 40a, 40b. A memory-management unit 10 receives and buffers access request from the processor 30 to memory ranks 40a, 40b, and issues access request to a rank-management unit 20 based on scheduling for memory management. A rank-management unit 20 connects the memory ranks 40a, 40b, receives and buffers access request from the memory-management unit 10, and gives access request to a specified memory rank based on scheduling for rank management.

Abstract: Improved efficiency of address/data communication over a memory bus. A memory-control device is located between a processor 30 and memory ranks 40a, 40b and controls access to the memory ranks 40a, 40b. A memory-management unit 10 receives and buffers access request from the processor 30 to memory ranks 40a, 40b, and issues access request to a rank-management unit 20 based on scheduling for memory management. A rank-management unit 20 connects the memory ranks 40a, 40b, receives and buffers access request from the memory-management unit 10, and gives access request to a specified memory rank based on scheduling for rank management.

Abstract: A method of manufacturing a semiconductor device of the present invention has the steps of forming a pattern made of a processed film or a resist on a substrate, washing the pattern with a washing liquid which is a liquid including at least water, spreading an amphophilic material that has a hydrophilic group and a hydrophobic group on the surface of the washing liquid remaining on the substrate after washing the pattern, and drying the substrate to remove the washing liquid on the substrate after spreading the amphophilic material. When moisture is removed in the drying step, molecules of the amphophilic material are spread on the surface of the washing liquid, so that the surface tension of the washing liquid is reduced to prevent the pattern from inclining.