Abstract: There is a highly reliable semiconductor module having a satisfactory bonding strength in the electrical bonded portion. In the semiconductor module 10, a semiconductor chip 11 is mounted on a circuit board 20. In the circuit board 20, on an insulating ceramic substrate 21 is formed a metal circuit plate 22 on which the semiconductor chip 11 is implemented. The semiconductor chip 11 and metal circuit plate 22 are connected with each other by an aluminum bonding wire 23. In the connected portion between the metal circuit plate 22 and bonding wire 23, a coating layer 24 for excellent conjunction therebetween is mounted. The coating layer 24, as shown in an enlarged diagram, is made up of a nickel (Ni) layer 241, a P-distributed palladium (Pd) layer 242, and an Au layer 243 in increasing order. To the P-distributed Pd layer 242 is added P (phosphorous) and, the P concentration on the Ni layer 241 is higher than that on the Au layer side 243.

Abstract: A ceramic substrate part comprising on its upper surface pluralities of external electrodes comprising wire-bonding electrodes, each of which comprises a primer layer based on Ag or Cu, a Ni-based lower layer, an intermediate layer based on a Pd—P alloy containing 0.4-5% by mass of P, and a Au-based upper layer formed in this order on a ceramic substrate, the upper layer containing Pd after heated by soldering, and having a Au concentration of 80 atomic % or more based on the total concentration (100 atomic %) of Au and Pd.

Abstract: A ceramic substrate part comprising on its upper surface pluralities of external electrodes comprising wire-bonding electrodes, each of which comprises a primer layer based on Ag or Cu, a Ni-based lower layer, an intermediate layer based on a Pd—P alloy containing 0.4-5% by mass of P, and a Au-based upper layer formed in this order on a ceramic substrate, the upper layer containing Pd after heated by soldering, and having a Au concentration of 80 atomic % or more based on the total concentration (100 atomic %) of Au and Pd.

Abstract: A rare earth permanent magnet consisting essentially, by weight, of 27.0-31.0 % of at least one rare earth element including Y, 0.5-2.0 % of B, 0.02-0.15 % of N, 0.25 % or less of O, 0.15 % or less of C, at least one optional element selected from the group consisting of 0.1-2.0 % of Nb, 0.02-2.0 % of Al, 0.3-5.0 % of Co, 0.01-0.5 % of Ga and 0.01-1.0 % of Cu, and a balance of Fe, and a production method thereof. The contents of rare earth element, oxygen, carbon and oxygen in the magnet are regulated within the specific ranges.

Abstract: A rare earth permanent magnet consisting essentially, by weight, of 27.0-31.0% of at least one rare earth element including Y, 0.5-2.0% of B, 0.02-0.15% of N, 0.25% or less of O, 0.15% or less of C, at least one optional element selected from the group consisting of 0.1-2.0% of Nb, 0.02-2.0% of Al, 0.3-5.0% of Co, 0.01-0.5% of Ga and 0.01-1.0% of Cu, and a balance of Fe, and a production method thereof. The contents of rare earth element, oxygen, carbon and oxygen in the magnet are regulated within the specific ranges.

Abstract: A rare earth permanent magnet consisting essentially, by weight, of 27.0-31.0% of at least one rare earth element including Y, 0.5-2.0% of B, 0.02-0.15% of N, 0.25% or less of O, 0.15% or less of C, at least one optional element selected from the group consisting of 0.1-2.0% of Nb, 0.02-2.0% of Al, 0.3-5.0% of Co, 0.01-0.5% of Ga and 0.01-1.0% of Cu, and a balance of Fe, and a production method thereof. The contents of rare earth element, oxygen, carbon and oxygen in the magnet are regulated within the specific ranges.