Patents by Inventor Fumitomo Kawahara

Fumitomo Kawahara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11380445
    Abstract: A first SiC layer formed into a tubular shape and made of a SiC material, a first groove which spirals in one direction along the outer periphery of the first SiC layer, a first SiC fiber layer made of a plurality of SiC fibers wound along the first groove, a second SiC fiber layer made of a plurality of SiC fibers wound outside of the first SiC fiber layer in a direction different from the one direction, and a second SiC layer which is made of a SiC material and which covers the first SiC layer, the first SiC fiber layer, and the second SiC fiber layer are provided. The first SiC fiber layer and the second SiC fiber layer are separated from each other at intersections of the first SiC fiber layer and the second SiC fiber layer.
    Type: Grant
    Filed: October 22, 2019
    Date of Patent: July 5, 2022
    Assignee: ADMAP INC.
    Inventor: Fumitomo Kawahara
  • Publication number: 20210253485
    Abstract: Provided is a tubular body containing SiC fibers having high thermal conductivity. The tubular body containing SiC fibers includes a SiC fiber layer wound in a tubular form, an inner SiC coating layer covering an inner surface of the SiC fiber layer, and an outer SiC coating layer covering an outer surface of the SiC fiber layer. The inner and outer SiC coating layers are bound to each other in gaps provided in the SiC fiber layer.
    Type: Application
    Filed: September 13, 2018
    Publication date: August 19, 2021
    Inventors: Fumitomo Kawahara, Shougo Tsunagi
  • Publication number: 20200139662
    Abstract: A first SiC layer formed into a tubular shape and made of a SiC material, a first groove which spirals in one direction along the outer periphery of the first SiC layer, a first SiC fiber layer made of a plurality of SiC fibers wound along the first groove, a second SiC fiber layer made of a plurality of SiC fibers wound outside of the first SiC fiber layer in a direction different from the one direction, and a second SiC layer which is made of a SiC material and which covers the first SiC layer, the first SiC fiber layer, and the second SiC fiber layer are provided. The first SiC fiber layer and the second SiC fiber layer are separated from each other at intersections of the first SiC fiber layer and the second SiC fiber layer.
    Type: Application
    Filed: October 22, 2019
    Publication date: May 7, 2020
    Inventor: Fumitomo KAWAHARA
  • Publication number: 20100212148
    Abstract: A plurality of reference holes are formed in the surface of a first substrate made of a first material, and a plurality of columnar members are each fitted in the reference holes in such a manner that at least a part of each of the columnar members projects from the surface of the first substrate. Subsequently, an electrode surface layer made of a second material is formed on the surface of the first substrate in such a manner that an end portion of each of the columnar members are exposed at the surface and then the columnar members are removed. Thus obtained is a substrate-like electrode including at least an electrode surface layer provided with through holes having a cross section matching a sectional shape of the projecting portion of the columnar members.
    Type: Application
    Filed: May 30, 2008
    Publication date: August 26, 2010
    Inventor: Fumitomo Kawahara
  • Patent number: 6474987
    Abstract: A wafer (22) is placed on an upper surface of a holder body (23), and the holder body is inserted into a plurality of holder-aimed concave recesses (14) formed on supporters (12) accommodated in a heat treatment furnace such that the holder body is held horizontally. The holder body is formed into a disk shape free of recessed cut portions, and the holder body is formed with an upwardly projecting ring-like projection (24) extending in the circumferential direction of the holder body around the axis of the holder body. The wafer holder is constituted such that the wafer is placed on the holder body while contacting with the upper surface of the projection, and such that the outer diameter of the projection is formed to be in a range of 0.5D to 0.98D wherein D is the diameter of the wafer, so that the outer periphery of the wafer is kept from contacting with the projection. Occurrence of slips in the wafer is restricted by preventing warpage of the holder body upon fabricating the holder body.
    Type: Grant
    Filed: July 9, 2001
    Date of Patent: November 5, 2002
    Assignees: Mitsubishi Materials Silicon Corporation, Mitsu Engineering & Ship Building Co., Ltd., Shinku Giken Co., Ltd.
    Inventors: Tetsuya Nakai, Katsuo Arai, Makoto Shinohara, Fumitomo Kawahara, Makoto Saito, Yasuhiko Kawamura