Abstract: A substrate for a solid-state image pickup element, comprising: an n-type silicon substrate; and an n-type epitaxial growth layer formed on a surface of the n-type silicon substrate, wherein the substrate is configured to form a solid-state image pickup element in the n-type epitaxial growth layer, the solid-state image pickup element comprising: a photoelectric converting section; and a charge transferring section having charge transfer electrodes which transfer charges produced in the photoelectric converting section, and the n-type silicon substrate has a specific resistance of 10/1,000 ?cm or less.

Abstract: An MEM unit according to the invention comprises an Si (silicon) substrate 1 having such a thickness as to transmit a visible light therethrough, an insulating layer 2 formed in contact with the upper surface of the Si substrate 1, a lower electrode layer 3 formed in contact with the upper surface of the insulating layer 2, a sacrificial layer gap 4 of a space formed in the partial region of the upper surface of the lower electrode layer 3, a movable film 5 formed on the upper surface of the lower electrode layer 3 to cover the sacrificial layer gap 4, an upper electrode 6 formed in contact with the upper part of the movable film 5, a contact hole 7 penetrating to reach the surface of the lower electrode layer 3 from the surface of the movable film 5, and a lower electrode 8 formed from the surroundings of the upper part of the contact hole 7 to the surface of the lower electrode layer 3 through the contact hole 7.

Abstract: A solid-state imaging device includes a large number of pixel portions each of which includes a photo diode 30. A part of the large number of pixel portions are pixel portions for detecting a black level. The pixel portions for detecting the black level are scattered in a region where the large number of pixel portions are arranged.

Abstract: A substrate for a solid-state image pickup element, comprising: an n-type silicon substrate; and an n-type epitaxial growth layer formed on a surface of the n-type silicon substrate, wherein the substrate is configured to form a solid-state image pickup element in the n-type epitaxial growth layer, the solid-state image pickup element comprising: a photoelectric converting section; and a charge transferring section having charge transfer electrodes which transfer charges produced in the photoelectric converting section, and the n-type silicon substrate has a specific resistance of 10/1,000 ?cm or less.

Abstract: An MEM unit according to the invention comprises an Si (silicon) substrate 1 having such a thickness as to transmit a visible light therethrough, an insulating layer 2 formed in contact with the upper surface of the Si substrate 1, a lower electrode layer 3 formed in contact with the upper surface of the insulating layer 2, a sacrificial layer gap 4 of a space formed in the partial region of the upper surface of the lower electrode layer 3, a movable film 5 formed on the upper surface of the lower electrode layer 3 to cover the sacrificial layer gap 4, an upper electrode 6 formed in contact with the upper part of the movable film 5, a contact hole 7 penetrating to reach the surface of the lower electrode layer 3 from the surface of the movable film 5, and a lower electrode 8 formed from the surroundings of the upper part of the contact hole 7 to the surface of the lower electrode layer 3 through the contact hole 7.

Abstract: A method of manufacturing a silicon single crystal substrate with the back surface thereof having deposited polycrystalline silicon. The method includes steps of depositing polycrystalline silicon on a coarsely polished silicon single crystal substrate, mirror surface finish polishing one substrate surface and carrying out a high temperature thermal treatment. The thermal treatment is carried out either prior or subsequent to the polycrystalline silicon deposition step. The thermal treatment has the effects of causing diffusion of interstitial oxygen Oi from the substrate surface to the outside and also causing contraction and vanishing of Oi precipitation nuclei in the substrate.

Abstract: A chemical vapor deposition apparatus includes a reaction tube, a substrate-holder installed in the reaction tube, the substrate-holder holding a plurality of substrates in a vertical direction, surfaces of the substrates being held horizontally, a rotating-means for rotating the substrate-holder, a heating-means for heating the substrates, a first gas-supply nozzle tube installed vertically in the reaction tube, the first gas-supply nozzle tube having a first vertical gas-emission line of a plurality of first gas-emission holes aligned in a vertical direction, and a second gas-supply nozzle tube installed vertically in the reaction tube, the second gas-supply nozzle tube having a second vertical gas-emission line, a plurality of second gas-emission holes aligned in a vertical direction, a first gas-emitting-axis of the first gas-emission holes intersecting with a second gas-emitting-axis of the second gas-emission holes at a first intersection over the substrate, the first intersection of the first and secon

Abstract: A gettering method has a step in which the back surface of a semiconductor substrate having the upper surface on which semiconductor device elements is to be formed, with a laser beam having a wavelength of 150 to 400 nm to introduce strain fields onto the back surface of the substrate. The energy density of the laser beam is from 0.5 to 10 J/cm.sup.2, and the irradiation pitch of the laser is 40 to 1500 .mu.m. The laser irradiation may be effected under the condition where an oxide film or a nitride film is formed on the back surface of the semiconductor substrate, or after the back surface of the semiconductor substrate is blasted with fine particles of silica or the like.