Abstract: The present disclosure provides a product removal apparatus, a treatment system, and a product removal method that can sufficiently remove the products deposited inside a vacuum pump and also suppress corrosion of the base material of the vacuum pump. The product removal apparatus of the present disclosure includes: a sensor for measuring the temperature of the inside of a vacuum pump, the thickness of a film of a product in a flow path in the vacuum pump, or the vibration frequency of the vacuum pump; a gas supplier for supplying a gas containing hydrogen halide, fluorine, chlorine, chlorine trifluoride, or fluorine radicals to the vacuum pump; and a control device. The control device controls the gas supplier so that the supply of the gas to the vacuum pump is stopped depending on a rate of temperature increase calculated from the temperature measured by the sensor, the film thickness, or the vibration frequency.

Abstract: An aspect of the disclosure provides a substrate drying apparatus. The substrate drying apparatus includes: a gripping part, gripping an outer periphery part of a substrate that is square; a substrate nozzle, ejecting gas to the substrate gripped by the gripping part to dry the substrate; and a gripping part nozzle, ejecting gas to the gripping part to dry the substrate. The substrate nozzle is relatively movable with respect to the substrate in a first direction, and is able to eject the gas in the first direction toward the substrate. The gripping part nozzle is relatively movable with respect to the substrate in the first direction, and is able to eject the gas in a second direction intersecting with the first direction. The gripping part nozzle is disposed behind the substrate nozzle in the first direction.

Abstract: A slit nozzle is moved by a nozzle lifting/lowering mechanism and a nozzle sliding mechanism relative to substrates held in a substantially horizontal attitude by spin chucks. A development liquid is discharged on each substrate from a discharge port of the slit nozzle such that development processing for the substrate is performed. After the development liquid is discharged, the slit nozzle is moved to a waiting position excluding positions over the substrates held by the spin chucks. In waiting pods provided at the waiting positions, cleaning processing for the slit nozzle is performed by a cleaning liquid with gas bubbles mixed therein.

Abstract: A slit nozzle is moved by a nozzle lifting/lowering mechanism and a nozzle sliding mechanism relative to substrates held in a substantially horizontal attitude by spin chucks. A development liquid is discharged on each substrate from a discharge port of the slit nozzle such that development processing for the substrate is performed. After the development liquid is discharged, the slit nozzle is moved to a waiting position excluding positions over the substrates held by the spin chucks. In waiting pods provided at the waiting positions, cleaning processing for the slit nozzle is performed by a cleaning liquid with gas bubbles mixed therein.

Abstract: A slit nozzle is moved by a nozzle lifting/lowering mechanism and a nozzle sliding mechanism relative to substrates held in a substantially horizontal attitude by spin chucks. A development liquid is discharged on each substrate from a discharge port of the slit nozzle such that development processing for the substrate is performed. After the development liquid is discharged, the slit nozzle is moved to a waiting position excluding positions over the substrates held by the spin chucks. In waiting pods provided at the waiting positions, cleaning processing for the slit nozzle is performed by a cleaning liquid with gas bubbles mixed therein.

Abstract: A slit nozzle is moved by a nozzle lifting/lowering mechanism and a nozzle sliding mechanism relative to substrates held in a substantially horizontal attitude by spin chucks. A development liquid is discharged on each substrate from a discharge port of the slit nozzle such that development processing for the substrate is performed. After the development liquid is discharged, the slit nozzle is moved to a waiting position excluding positions over the substrates held by the spin chucks. In waiting pods provided at the waiting positions, cleaning processing for the slit nozzle is performed by a cleaning liquid with gas bubbles mixed therein.