Patents by Inventor FUNAN TAN

FUNAN TAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetic tunnel junction structure and integration schemes
    Patent number: 11594675
    Abstract: A memory device is provided, the memory device comprising a contact pillar in a dielectric layer. A magnetic tunnel junction may be provided over the contact pillar. A barrier layer may be provided on a sidewall of the magnetic tunnel junction and extending over a horizontal surface of the dielectric layer. A spacer may be provided over the barrier layer.
    Type: Grant
    Filed: June 4, 2020
    Date of Patent: February 28, 2023
    Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
    Inventors: Suk Hee Jang, Funan Tan, Naganivetha Thiyagarajah, Young Seon You
  • MAGNETIC TUNNEL JUNCTION STRUCTURE AND INTEGRATION SCHEMES
    Publication number: 20210384416
    Abstract: A memory device is provided, the memory device comprising a contact pillar in a dielectric layer. A magnetic tunnel junction may be provided over the contact pillar. A barrier layer may be provided on a sidewall of the magnetic tunnel junction and extending over a horizontal surface of the dielectric layer. A spacer may be provided over the barrier layer.
    Type: Application
    Filed: June 4, 2020
    Publication date: December 9, 2021
    Inventors: SUK HEE JANG, FUNAN TAN, NAGANIVETHA THIYAGARAJAH, YOUNG SEON YOU