Abstract: A vascular sap measurement sensor includes an indicator electrode probe, a reference electrode probe, and a supporting portion. The indicator electrode probe is an ion-sensitive field effect transistor. The reference electrode probe includes a solid reference electrode, the solid reference electrode including a base layer, a silver chloride layer, and a chloride layer, the base layer being formed of an electrically conductive body, the silver chloride layer being formed on a surface of the base layer, the chloride layer being formed on a surface of the silver chloride layer. The supporting portion supports the indicator electrode probe and the reference electrode probe arranged in parallel.

Abstract: Provided are a plant water content sensor and a plant water content measuring method configured to measure a water content of a plant in a non-destructive manner. A plant water content sensor includes a water content probe, which includes a readout electrode pair made of a pair of electrodes disposed at a predetermined interval thereof, a water sensitive film, which is bridged across the pair of electrodes, and a supporting portion, which supports the water content probe. A water content of the plant is measurable by sticking the water content probe into the plant and reading out impedance or an electrostatic capacity from the readout electrode pair.

Abstract: To provide a vascular sap measurement sensor in which a flow channel that receives incoming flow of vascular sap is unlikely to be blocked by tissues of a plant. A vascular sap measurement sensor 1 includes: a trapping probe 20 for trapping vascular sap; and a support 10 that supports the trapping probe 20. A trapping flow channel 21 that receives incoming flow of the vascular sap is formed in the trapping probe 20. The trapping flow channel 21 has an inlet opening 24 formed on a side surface of the trapping probe 20. This makes it unlikely that the trapping flow channel 21 will be blocked by tissues of a plant when sticking the trapping probe 20 into the plant.

Abstract: To provide a vascular sap flow speed sensor having a size allowing measurement of the flow speed of vascular sap in a part of a plant such as a stem and capable of being manufactured at low cost. A vascular sap flow speed sensor 1 includes a heater sensor HS and a reference sensor RS. The heater sensor HS includes: a first probe unit 10a including a heat transfer plate 11 and a probe 12; a heater 20; a first temperature sensor 30a; and a first housing 40a in which the heat transfer plate 11, the heater 20, and the first temperature sensor 30a are housed. The reference sensor RS includes: a second probe unit 10b including a heat transfer plate 11 and a probe 12; a second temperature sensor 30b; and a second housing 40b in which the heat transfer plate 11 and the second temperature sensor 30b are housed. Each of the first probe unit 10a and the second probe unit 10b is made of a metallic material.

Abstract: To provide a vascular sap flow speed sensor having a size allowing measurement of the flow speed of vascular sap in a part of a plant such as a stem and capable of being manufactured at low cost. A vascular sap flow speed sensor 1 includes a heater sensor HS and a reference sensor RS. The heater sensor HS includes: a first probe unit 10a including a heat transfer plate 11 and a probe 12; a heater 20; a first temperature sensor 30a; and a first housing 40a in which the heat transfer plate 11, the heater 20, and the first temperature sensor 30a are housed. The reference sensor RS includes: a second probe unit 10b including a heat transfer plate 11 and a probe 12; a second temperature sensor 30b; and a second housing 40b in which the heat transfer plate 11 and the second temperature sensor 30b are housed. Each of the first probe unit 10a and the second probe unit 10b is made of a metallic material.

Abstract: To provide a vascular sap measurement sensor in which a flow channel that receives incoming flow of vascular sap is unlikely to be blocked by tissues of a plant. A vascular sap measurement sensor 1 includes: a trapping probe 20 for trapping vascular sap; and a support 10 that supports the trapping probe 20. A trapping flow channel 21 that receives incoming flow of the vascular sap is formed in the trapping probe 20. The trapping flow channel 21 has an inlet opening 24 formed on a side surface of the trapping probe 20. This makes it unlikely that the trapping flow channel 21 will be blocked by tissues of a plant when sticking the trapping probe 20 into the plant.

Abstract: A plant water dynamics sensor usable for measuring the dynamics of water flowing in a fine point of a plant such as a distal end of a new branch or a pedicel comprises a heater-equipped temperature probe including a temperature sensor and a heater; a temperature probe including a temperature sensor; an electrical resistance probe including an electrical resistance measurement electrode; and a support that supports the probes while the probes are aligned parallel to each other. The position of a xylem XY can be detected based on an electrical resistance measured at the electrical resistance probe, so that each of the temperature sensors can be arranged correctly in a position at a phloem PH or at the xylem XY. This facilitates attachment of a plant water dynamics sensor and water dynamics in a plant can be measured with high accuracy.

Abstract: To provide a plant water dynamics sensor usable for measuring the dynamics of water flowing in a fine point of a plant such as a distal end of a new branch or a pedicel. The plant water dynamics sensor comprises: a heater-equipped temperature probe 10 including a temperature sensor 11 and a heater 12; a temperature probe 20 including a temperature sensor 21; an electrical resistance probe 30 including an electrical resistance measurement electrode 33; and a support 80 that supports the probes 10, 20, and 30 while the probes are aligned parallel to each other. The position of a xylem XY can be detected based on an electrical resistance measured at the electrical resistance probe 30, so that each of the temperature sensors 11 and 21 can be arranged correctly in a position at a phloem PH or at the xylem XY. This facilitates attachment of a plant water dynamics sensor 1 and water dynamics in a plant can be measured with high accuracy.

Abstract: A mirror device includes a mirror (153) which is supported to be pivotable with respect to a mirror substrate (151), a driving electrode (103-1-103-4) which is formed on an electrode substrate (101) facing the mirror substrate, and an antistatic structure (106) which is arranged in a space between the mirror and the electrode substrate. This structure can fix the potential of the lower surface of the mirror and suppress drift of the mirror by applying a second potential to the antistatic structure.

Abstract: A movable beam (182a) and a movable beam (182b) each having one end fixed to a frame portion (181) of a mirror substrate (108) are provided inside the frame portion (181). The movable beam (182a) and the movable beam (182b) each having one end fixed to a corresponding to one of two opposite inner sides of the frame portion (181) are aligned at a predetermined distance on the same line in the direction in which the two sides face each other. Each of the movable beam (182a) and the movable beam (182b) has the other end displaceable in the normal line direction of the mirror substrate (108) and therefore has a cantilever structure. A mirror (183) is arranged between the movable beam (182a) and the movable beam (182b) and connected to them via a pair of connectors (109a, 109b).

Abstract: A mirror device includes a mirror (153) which is supported to be pivotable with respect to a mirror substrate (151), a driving electrode (103-1-103-4) which is formed on an electrode substrate (101) facing the mirror substrate, and an antistatic structure (106) which is arranged in a space between the mirror and the electrode substrate. This structure can fix the potential of the lower surface of the mirror and suppress drift of the mirror by applying a second potential to the antistatic structure.

Abstract: A MEMS device includes a mirror substrate (200), an electrode substrate (301) arranged so as to face the mirror substrate (200), a mirror (230) serving as a movable member rotatably supported in an opening portion of the mirror substrate (200) via support members, a driving electrode (101) arranged on an insulating film (104) on a surface of the electrode substrate (301) facing the mirror substrate (200) so as to face the mirror (230) across a gap and drive the mirror (230), and a lower electrode (103) made of a metal or a semiconductor and formed under the insulating film (104) exposed to the gap so as to be in contact with the insulating film (104).

Abstract: A mirror device includes a mirror (153) which is supported to be pivotable with respect to a mirror substrate (151), a driving electrode (103-1-103-4) which is formed on an electrode substrate (101) facing the mirror substrate, and an antistatic structure (106) which is arranged in a space between the mirror and the electrode substrate. This structure can fix the potential of the lower surface of the mirror and suppress drift of the mirror by applying a second potential to the antistatic structure.

Abstract: A total length of members (11, 13, 15, 17, 19, 21, 23, 25) formed in an X-axis direction of a spring (1) is larger than a spring length of the spring (1) and larger than a total length of members (12, 14, 16, 18, 20, 22, 24) formed in a Y-axis direction. With this arrangement, spring constants of respective axes can be increased, and a spring constant in a direction R can be set appropriately and freely within a wider range.

Abstract: A mirror device includes a mirror (153) which is supported to be pivotable with respect to a mirror substrate (151), a driving electrode (103-1-103-4) which is formed on an electrode substrate (101) facing the mirror substrate, and an antistatic structure (106) which is arranged in a space between the mirror and the electrode substrate. This structure can fix the potential of the lower surface of the mirror and suppress drift of the mirror by applying a second potential to the antistatic structure.

Abstract: When a mirror (230) rotates with a maximum angle, a distance from the rotation center of the mirror (230) to the edge of the mirror (230) along a direction horizontal to an electrode substrate (300) is larger than a distance from a perpendicular, perpendicular to the horizontal direction and extending through the rotation center, to the distal end of an electrode (340a-340d) along the horizontal direction. Even when the mirror (230) rotates to come into contact with the electrode substrate (300), since the electrode (340a-340d) does not exist at a position with which the mirror (230) comes into contact when rotating, the mirror (230) and the electrode (340a-340d) can be prevented from being electrodeposited.

Abstract: A MEMS device includes a mirror substrate (200), an electrode substrate (301) arranged so as to face the mirror substrate (200), a mirror (230) serving as a movable member rotatably supported in an opening portion of the mirror substrate (200) via support members, a driving electrode (101) arranged on an insulating film (104) on a surface of the electrode substrate (301) facing the mirror substrate (200) so as to face the mirror (230) across a gap and drive the mirror (230), and a lower electrode (103) made of a metal or a semiconductor and formed under the insulating film (104) exposed to the gap so as to be in contact with the insulating film (104).

Abstract: A movable beam (182a) and a movable beam (182b) each having one end fixed to a frame portion (181) of a mirror substrate (108) are provided inside the frame portion (181). The movable beam (182a) and the movable beam (182b) each having one end fixed to a corresponding to one of two opposite inner sides of the frame portion (181) are aligned at a predetermined distance on the same line in the direction in which the two sides face each other. Each of the movable beam (182a) and the movable beam (182b) has the other end displaceable in the normal line direction of the mirror substrate (108) and therefore has a cantilever structure. A mirror (183) is arranged between the movable beam (182a) and the movable beam (182b) and connected to them via a pair of connectors (109a, 109b).

Abstract: A total length of members (11, 13, 15, 17, 19, 21, 23, 25) formed in an X-axis direction of a spring (1) is larger than a spring length of the spring (1) and larger than a total length of members (12, 14, 16, 18, 20, 22, 24) formed in a Y-axis direction. With this arrangement, spring constants of respective axes can be increased, and a spring constant in a direction R can be set appropriately and freely within a wider range.

Abstract: When a mirror (230) rotates with a maximum angle, a distance from the rotation center of the mirror (230) to the edge of the mirror (230) along a direction horizontal to an electrode substrate (300) is larger than a distance from a perpendicular, perpendicular to the horizontal direction and extending through the rotation center, to the distal end of an electrode (340a-340d) along the horizontal direction. Even when the mirror (230) rotates to come into contact with the electrode substrate (300), since the electrode (340a-340d) does not exist at a position with which the mirror (230) comes into contact when rotating, the mirror (230) and the electrode (340a-340d) can be prevented from being electrodeposited.