Abstract: In an embodiment an optoelectronic component includes a radiation emitting semiconductor chip configured to emit primary electromagnetic radiation from a radiation emission surface, a conversion element configured to convert the primary electromagnetic radiation into electromagnetic secondary radiation, a first potting covering at least one side surface of the semiconductor chip, a second potting arranged on the first potting and an adhesion promoter with which the conversion element is fixed on the radiation emission surface of the semiconductor chip, wherein the adhesion promoter is arranged on a top surface of the first potting, wherein the first potting includes first filler particles, wherein the second potting includes second filler particles, and wherein a mass fraction of the first filler particles is greater than a mass fraction of the second filler particles per volume element.

Abstract: In an embodiment an optoelectronic component includes a radiation emitting semiconductor chip configured to emit primary electromagnetic radiation from a radiation emission surface, a conversion element configured to convert the primary electromagnetic radiation into electromagnetic secondary radiation, a first potting covering at least one side surface of the semiconductor chip, a second potting arranged on the first potting and an adhesion promoter with which the conversion element is fixed on the radiation emission surface of the semiconductor chip, wherein the adhesion promoter is arranged on a top surface of the first potting, wherein the first potting includes first filler particles, wherein the second potting includes second filler particles, and wherein a mass fraction of the first filler particles is greater than a mass fraction of the second filler particles per volume element.

Abstract: A lighting device and a method for producing a lighting device are disclosed. In an embodiment, the lighting device includes a carrier, at least one optoelectronic illuminant arranged on the carrier, the illuminant configured to emit light into an emission area and a color scattering layer located in the emission area, the color scattering layer configured to generate a color by scattering of light at a surface of the color scattering layer facing away from the illuminant.

Abstract: An optoelectronic component includes a carrier, and a light source arranged on a surface of the carrier, said light source including at least one luminous surface formed by at least one light-emitting diode, wherein a transparent converter-free spacer is arranged on the luminous surface such that a distance is formed between the luminous surface and a spacer surface of the spacer facing away from the luminous surface, and wherein the light source is potted by a potting compound such that the spacer surface is formed extending flush with a potting compound surface facing away from the surface of the carrier and a surface formed by a spacer surface and the potting compound surface is plane.

Abstract: Disclosed is a radiation-emitting semi-conductor chip (1) comprising an epitaxial semi-conductor layer sequence (3) which emits electromagnetic radiation in operation. The epitaxial semi-conductor layer sequence (3) is applied on a a transparent substrate (4), wherein the substrate (4) has a first main surface (8) facing the semi-conductor layer sequence (3), a second main surface (9) facing away from the semi-conductor layer sequence (3) and a first lateral flank (10) arranged between the first main surface (8) and the second main surface (9), and the lateral flank (10) has a decoupling structure which is formed in a targeted manner from separating tracks. Also disclosed is a method for producing the semi-conductor chip, and a component comprising such a semi-conductor chip.

Abstract: The invention relates to an optoelectronic semiconductor chip (10) comprising a carrier (2) and a semiconductor body (1) having an active layer (13) provided for generating electromagnetic radiation. Said carrier (2) has a first main surface (2A) facing the semiconductor body, a second main surface (2B) facing away from the semiconductor body, and a sidewall (2C) arranged between the first main surface and the second main surface. The carrier (2) has a structured region (21, 22, 23, 2C) for enlarging the total surface area of the sidewall, wherein the structured region has singulation traces. The invention also relates to an optoelectronic component (100) comprising such a semiconductor chip and a method for producing a plurality of such semiconductor chips are specified.

Abstract: Disclosed is a radiation-emitting semi-conductor chip (1) comprising an epitaxial semi-conductor layer sequence (3) which emits electromagnetic radiation in operation. The epitaxial semi-conductor layer sequence (3) is applied on a a transparent substrate (4), wherein the substrate (4) has a first main surface (8) facing the semi-conductor layer sequence (3), a second main surface (9) facing away from the semi-conductor layer sequence (3) and a first lateral flank (10) arranged between the first main surface (8) and the second main surface (9), and the lateral flank (10) has a decoupling structure which is formed in a targeted manner from separating tracks. Also disclosed is a method for producing the semi-conductor chip, and a component comprising such a semi-conductor chip.

Abstract: A method of producing a converter component for an optoelectronic lighting apparatus includes forming a layer stack having an injection-molded or extruded conversion layer and an injection-molded or extruded diffuser layer. A converter component for an optoelectronic lighting apparatus includes a layer stack including an injection-molded or extruded conversion layer, and an injection-molded or extruded diffuser layer.

Abstract: An optoelectronic component includes a carrier, and a light source arranged on a surface of the carrier, said light source including at least one luminous surface formed by at least one light-emitting diode, wherein a transparent converter-free spacer is arranged on the luminous surface such that a distance is formed between the luminous surface and a spacer surface of the spacer facing away from the luminous surface, and wherein the light source is potted by a potting compound such that the spacer surface is formed extending flush with a potting compound surface facing away from the surface of the carrier and a surface formed by a spacer surface and the potting compound surface is plane.

Abstract: A converter component for an opto-electronic lighting device includes an auxiliary carrier, wherein a layer stack including a base layer and a converter layer is formed on a surface of the auxiliary carrier. An opto-electronic lighting device includes a light-emitting semiconductor component and the converter component for an opto-electronic light device including an auxiliary carrier, wherein a layer stack including a base layer and a converter layer is formed on a surface of the auxiliary carrier with a removed auxiliary carrier.

Abstract: An optoelectronic component includes a carrier, and a light source arranged on a surface of the carrier, said light source including at least one luminous surface formed by at least one light-emitting diode, wherein a transparent converter-free spacer is arranged on the luminous surface such that a distance is formed between the luminous surface and a spacer surface of the spacer facing away from the luminous surface, and wherein the light source is potted by a potting compound such that the spacer surface is formed extending flush with a potting compound surface facing away from the surface of the carrier and a surface formed by a spacer surface and the potting compound surface is plane.

Abstract: A lighting device and a method for producing a lighting device are disclosed. In an embodiment, the lighting device includes a carrier, at least one optoelectronic illuminant arranged on the carrier, the illuminant configured to emit light into an emission area and a color scattering layer located in the emission area, the color scattering layer configured to generate a color by scattering of light at a surface of the color scattering layer facing away from the illuminant.

Abstract: The invention relates to an optoelectronic semiconductor chip (10) comprising a carrier (2) and a semiconductor body (1) having an active layer (13) provided for generating electromagnetic radiation. Said carrier (2) has a first main surface (2A) facing the semiconductor body, a second main surface (2B) facing away from the semiconductor body, and a sidewall (2C) arranged between the first main surface and the second main surface. The carrier (2) has a structured region (21, 22, 23, 2C) for enlarging the total surface area of the sidewall, wherein the structured region has singulation traces. The invention also relates to an optoelectronic component (100) comprising such a semiconductor chip and a method for producing a plurality of such semiconductor chips are specified.

Abstract: A method for manufacturing an optoelectronic semiconductor component, comprising: providing a semiconductor chip in a composite wafer, comprising an active side for emitting a primary radiation and a contact terminal which is arranged on the active side; depositing a coupling element on the active side; attaching a luminescence conversion element, for converting part of the primary radiation into a secondary radiation, to the coupling element.

Abstract: A method for manufacturing an optoelectronic semiconductor component, comprising: providing a semiconductor chip in a composite wafer, comprising an active side for emitting a primary radiation and a contact terminal which is arranged on the active side; depositing a coupling element on the active side; attaching a luminescence conversion element, for converting part of the primary radiation into a secondary radiation, to the coupling element.

Abstract: The invention relates to an optoelectronic component, having —a carrier (1) comprising a first main surface (Ia), —at least one optoelectronic semiconductor chip (2) having no substrate, and —a contact metallization (3a, 3b), wherein —the carrier (1) is electrically insulating, —the at least one optoelectronic semiconductor chip (2) is fastened to the first main surface (Ia) of the carrier (1) by means of a bonding material (4), particularly a solder material, —the contact metallization (3a, 3b) covers at least one area of the first main surface (Ia) free of the optoelectronic semiconductor chip (2), and —the contact metallization (3a, 3b) is electrically conductively connected to the optoelectronic semiconductor chip (2).

Abstract: A method for manufacturing an optoelectronic semiconductor component, comprising: providing a semiconductor chip in a composite wafer, comprising an active side for emitting a primary radiation and a contact terminal which is arranged on the active side; depositing a coupling element on the active side; attaching a luminescence conversion element, for converting part of the primary radiation into a secondary radiation, to the coupling element.

Abstract: A method for producing a plurality of radiation-emitting semiconductor components (10) is specified, said components each comprising at least one semiconductor chip (1) and a converter lamina (2). For this purpose, this method involves providing a plurality of semiconductor chips (1) in the wafer assembly (10a), said semiconductor chips each being suitable for emitting a primary radiation. Moreover, a plurality of converter laminae (2) are provided on a common carrier (2a), said converter laminae each being suitable for converting the primary radiation into a secondary radiation, wherein a converter lamina (2) is in each case mounted on one semiconductor chip (1) or onto a plurality of semiconductor chips (1) by means of an automated method.

Abstract: An optoelectronic module for emitting monochromatic radiation in the visible wavelength range is specified. The module has a plurality of light emitting diode chips which generate UV radiation. The UV radiation is converted into light in the visible range, for example, into green light, by a wavelength converter. The coupling-out of light from the module is optimized by the use of two selectively reflecting and transmitting filters. This module can be used as a light source in a projection apparatus.

Abstract: The invention relates to an optoelectronic component, having —a carrier (1) comprising a first main surface (Ia), —at least one optoelectronic semiconductor chip (2) having no substrate, and —a contact metallization (3a, 3b), wherein —the carrier (1) is electrically insulating, —the at least one optoelectronic semiconductor chip (2) is fastened to the first main surface (Ia) of the carrier (1) by means of a bonding material (4), particularly a solder material, —the contact metallization (3a, 3b) covers at least one area of the first main surface (Ia) free of the optoelectronic semiconductor chip (2), and —the contact metallization (3a, 3b) is electrically conductively connected to the optoelectronic semiconductor chip (2).