Abstract: A spectroscopic laser sensor based on hybrid lll-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a lll-V gain-chip, e.g., an AIGalnAsSb/GaSb based gain-chip, and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AIGal-nAsSb/GaSb based photodetectors and embedded electronics for signal processing.

Abstract: A spectroscopic laser sensor based on hybrid III-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a III-V gain-chip, e.g., an AlGaInAsSb/GaSb based gain-chip, and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AlGa1-nAsSb/GaSb based photodetectors and embedded electronics for signal processing.

Abstract: A spectroscopic laser sensor based on hybrid lll-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a lll-V gain-chip, e.g., an AIGalnAsSb/GaSb based gain-chip, and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AIGalnAsSb/GaSb based photodetectors and embedded electronics for signal processing.

Abstract: A spectroscopic laser sensor based on hybrid III-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a III-V gain-chip, e.g., an AIGalnAsSb/GaSb based gain-chip, and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AIGal-nAsSb/GaSb based photodetectors and embedded electronics for signal processing.

Abstract: A spectroscopic laser sensor based on hybrid III-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a III-V gain-chip, e.g., an AlGaInAsSb/GaSb based gain-chip and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AlGaInAsSb/GaSb based photodetectors and embedded electronics for signal processing.

Abstract: A spectroscopic laser sensor based on hybrid III-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a III-V gain-chip, e.g., an AlGaInAsSb/GaSb based gain-chip and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AlGaInAsSb/GaSb based photodetectors and embedded electronics for signal processing.

Abstract: A spectroscopic laser sensor based on hybrid lll-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a lll-V gain-chip, e.g., an AIGalnAsSb/GaSb based gain-chip, and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AIGal-nAsSb/GaSb based photodetectors and embedded electronics for signal processing.

Abstract: An on-chip broadband radiation source, and methods for its manufacture such that a photonics IC comprises an optical waveguide such as a semiconductor waveguide, a thin III-V material membrane with absorption capability for absorbing an optical pump signal induced in the waveguide. The III-V membrane comprises a LED implemented therein. The photonics IC also comprises a coupling means between the waveguide and the membrane. The device provides a broadband radiation source at a wavelength longer than the wavelength of the transferred radiation. The broadband signal can then be coupled out through the waveguide and used in the chip.

Abstract: An on-chip broadband radiation source, and methods for its manufacture such that a photonics IC comprises an optical waveguide such as a semiconductor waveguide, a thin III-V material membrane with absorption capability for absorbing an optical pump signal induced in the waveguide. The III-V membrane comprises a LED implemented therein. The photonics IC also comprises a coupling means between the waveguide and the membrane. The device provides a broadband radiation source at a wavelength longer than the wavelength of the transferred radiation. The broadband signal can then be coupled out through the waveguide and used in the chip.

Abstract: An integrated waveguide based spectrometer is described. The spectrometer comprises a sensing region for receiving multi-wavelength radiation for irradiating a sample in the sensing region, a wavelength demultiplexing element arranged for capturing said multi-wavelength radiation after interaction with the sample and for providing a number of wavelength demultiplexed radiation outputs or a number of different groups of wavelength demultiplexed radiation outputs, an integrated modulator for differently modulating the different demultiplexed radiation outputs or different groups of demultiplexed radiation outputs, and a multiplexer element for multiplexing the differently modulated demultiplexed radiation outputs or the differently grouped demultiplexed radiation outputs.

Abstract: An integrated waveguide based spectrometer is described. The spectrometer comprises a sensing region for receiving multi-wavelength radiation for irradiating a sample in the sensing region, a wavelength demultiplexing element arranged for capturing said multi-wavelength radiation after interaction with the sample and for providing a number of wavelength demultiplexed radiation outputs or a number of different groups of wavelength demultiplexed radiation outputs, an integrated modulator for differently modulating the different demultiplexed radiation outputs or different groups of demultiplexed radiation outputs, and a multiplexer element for multiplexing the differently modulated demultiplexed radiation outputs or the differently grouped demultiplexed radiation outputs.

Abstract: The present disclosure generally relates to a method of optically coupling a photonic integrated circuit and an external optical component.

Abstract: The present disclosure generally relates to a method of optically coupling a photonic integrated circuit and an external optical component.

Abstract: The present invention relates to an integrated photonic device (100) operatively coupleable with an optical element (300) in a first coupling direction. The integrated photonic device (100) comprises an integrated photonic waveguide (120) and a grating coupler (130) that is adapted for diffracting light from the waveguide (120) into a second coupling direction different from the first coupling direction. The integrated photonics device also comprises a refractive element (110) disposed adjacent the grating coupler (130) and adapted to refract the light emerging from the grating coupler (130) in the second coupling direction into the first coupling direction.

Abstract: A photonics integrated circuit for processing radiation includes a first-dimensional grating coupler for coupling in radiation, a second two-dimensional grating coupler for coupling out radiation and a waveguide structure having two distinct waveguide arms for splitting radiation received from the first grating coupler and recombining radiation in the second grating coupler. A phase shifting means furthermore is provided for inducing an additional phase shift in at least one of the two distinct waveguide arms thereby inducing a relative phase shift of ? between the two distinct waveguide arms so as to provide a TE/TM polarization switch for radiation between the first grating coupler and the second grating coupler.

Abstract: Photonic structures and methods of operating the photonic structures are disclosed. In one embodiment, the photonic structure includes a detector configured to detect radiation of a first wavelength range. The radiation of the first wavelength range is received from an external radiation guide, and the detector is substantially transparent to radiation of a second wavelength range that differs from the first wavelength range. The photonic structure further includes a coupling structure configured to free space couple out of the photonic structure radiation of the second wavelength range. The photonic structure further includes a guiding structure configured to optically guide the radiation of the second wavelength range through the detector.

Abstract: A photonics integrated circuit for processing radiation includes a first-dimensional grating coupler for coupling in radiation, a second two-dimensional grating coupler for coupling out radiation and a waveguide structure having two distinct waveguide arms for splitting radiation received from the first grating coupler and recombining radiation in the second grating coupler. A phase shifting means furthermore is provided for inducing an additional phase shift in at least one of the two distinct waveguide arms thereby inducing a relative phase shift of ? between the two distinct waveguide arms so as to provide a TE/TM polarization switch for radiation between the first grating coupler and the second grating coupler.

Abstract: Photonic structures and methods of operating the photonic structures are disclosed. In one embodiment, the photonic structure includes a detector configured to detect radiation of a first wavelength range. The radiation of the first wavelength range is received from an external radiation guide, and the detector is substantially transparent to radiation of a second wavelength range that differs from the first wavelength range. The photonic structure further includes a coupling structure configured to free space couple out of the photonic structure radiation of the second wavelength range. The photonic structure further includes a guiding structure configured to optically guide the radiation of the second wavelength range through the detector.

Abstract: The present invention relates to an integrated photonic device (100) operatively coupleable with an optical element (300) in a first coupling direction. The integrated photonic device (100) comprises an integrated photonic waveguide (120) and a grating coupler (130) that is adapted for diffracting light from the waveguide (120) into a second coupling direction different from the first coupling direction. The integrated photonics device also comprises a refractive element (110) disposed adjacent the grating coupler (130) and adapted to refract the light emerging from the grating coupler (130) in the second coupling direction into the first coupling direction.