Abstract: Digital memory devices and systems, as well as methods of operating digital memory devices, that include access circuitry to access a first subset of a plurality of memory cells associated with a current access address during a current access cycle and precharge circuitry, disposed in parallel relative to the access circuitry, to precharge in full or in part a second subset of the plurality of memory cells associated with a next precharge address during the current access cycle.

Abstract: Most semiconductor devices manufactured today, have uniform dopant concentration, either in the lateral or vertical device active (and isolation) regions. By grading the dopant concentration, the performance in various semiconductor devices can be significantly improved. Performance improvements can be obtained in application specific areas like increase in frequency of operation for digital logic, various power MOSFET and IGBT ICS, improvement in refresh time for DRAM's, decrease in programming time for nonvolatile memory, better visual quality including pixel resolution and color sensitivity for imaging ICs, better sensitivity for varactors in tunable filters, higher drive capabilities for JFET's, and a host of other applications.

Abstract: A method and architecture that overcomes the problem of latency-caused performance degradation of electronic memory systems. The method involves a “Posted Precharge,” by which an external command for Precharge is given as early as possible, such as immediately following a Read command. The execution of the Precharge is delayed by a precharge counter until all Read/Write commands are completed. By posting a precharge command on a bus at the first available opportunity, multiple pages can be open on the same bank of a memory device. As a result, access latencies are significantly reduced and efficiency of bus in electronic memory systems is significantly improved.

Abstract: A switch 100 includes a plurality of ports 101 for exchanging data. A shared memory 102 enables the exchange of data between first and second ones of the ports 101 and includes an array 202 of memory cells arranged as a plurality of rows and a single column having width equal to a predetermined word-width and circuitry 202, 204, 206, 208 for writing selected data presented at the first one of the ports 101 to a selected row in the array as a word of the predetermined word-width during a first time period and for reading the selected data from the selected row as a word of the predetermined wordwidth during a second time period for output at a second one of the ports 101.