Abstract: A device for determining radon concentration is provided. The device includes a diffusion chamber, that includes a number of openings that allow radon gas to enter and exit, and a radon sensing arrangement. The radon sensing arrangement includes at least one processing device and one or more detectors, arranged inside the diffusion chamber in such a way that no part of the diffusion chamber is located at a distance, perpendicular to the detector, of more than 20 mm from the closest part of a detector. The at least one processing device is arranged to determine the radon concentration by analyzing and processing the energy spectrum of alpha particles detected by the one or more detectors.

Abstract: The invention relates to a neutron detector (1) comprising a semiconductor detector substrate (10) and a conductive neutron converting layer (20), such as of TiB2. The neutron detector (1) thereby comprises a conductive contact made of a neutron conversion material (20).

Abstract: A device forming a high energy resolution integrated semiconductor &Dgr;E-E detector telescope is disclosed, in which is formed a very thin &Dgr;E detector portion (14) primarily fabricated from a first semiconductor wafer which is bonded/silicidized to a second semiconductor wafer forming an E detector portion (18). This &Dgr;E-E detector provides a well supported very thin &Dgr;E detector for high resolution. The very thin &Dgr;E detector portion bonded/silicidized to the E detector portion further provides between each other a buried metallic layer (16) acting as a contact common to the two detectors, which metal layer is thin and presents a low resistivity.