Abstract: A photodiodes array includes a useful layer made of CdxHg1-xTe; first doped zones each forming a PN junction with a second doped zone surrounding the first doped zones. The array includes regions located between two PN junctions, with a cadmium concentration gradient decreasing from the upper face to the lower face of the useful layer. A method of making such a photodiodes array includes producing, on the upper face of the useful layer, of a structured layer with at least one through opening, and with a cadmium concentration higher than the cadmium concentration in the useful layer; annealing the useful layer covered by the structured layer, with diffusion of cadmium atoms of the structured layer, from the structured layer to the useful layer; producing at least two PN junctions in the useful layer.

Abstract: A photodiodes array includes a useful layer made of CdxHg1-xTe; the first doped zones each forming a PN junction with a second doped zone surrounding the first doped zones. The array includes regions located between two PN junctions, with a cadmium concentration gradient decreasing from the upper face to the lower face of the useful layer. A method of making such a photodiodes array includes producing, on the upper face of the useful layer, of a structured layer with at least one through opening, and with a cadmium concentration higher than the cadmium concentration in the useful layer; annealing the useful layer covered by the structured layer, with diffusion of cadmium atoms of the structured layer, from the structured layer to the useful layer; producing at least two PN junctions in the useful layer.

Abstract: A semiconducting structure configured to receive electromagnetic radiation and transform the received electromagnetic radiation into an electric signal, the semiconductor structure including a semiconducting support within a first surface defining a longitudinal plane, a first zone with a first type of conductivity formed in the support with a second zone with a second type of conductivity that is opposite of the first type of conductivity to form a semiconducting junction. A mechanism limiting lateral current includes a third zone formed in the support in lateral contact with the second zone, the third zone having the second type of conductivity for which majority carriers are electrons. The third zone has a sufficient concentration of majority carriers to have an increase in an apparent gap due to a Moss-Burstein effect.

Abstract: A semiconducting structure configured to receive electromagnetic radiation and transform the received electromagnetic radiation into an electric signal, the semiconductor structure including a semiconducting support within a first surface defining a longitudinal plane, a first zone with a first type of conductivity formed in the support with a second zone with a second type of conductivity that is opposite of the first type of conductivity to form a semiconducting junction. A mechanism limiting lateral current includes a third zone formed in the support in lateral contact with the second zone, the third zone having the second type of conductivity for which majority carriers are electrons. The third zone has a sufficient concentration of majority carriers to have an increase in an apparent gap due to a Moss-Burstein effect.

Abstract: This photodetector capable of detecting electromagnetic radiation comprises: a doped semiconductor absorption layer for said radiation, capable of converting said radiation into charge carriers; a reflective layer that reflects the incident radiation that is not absorbed by semiconductor layer towards the latter, located underneath semiconductor layer; and a metallic structure placed on semiconductor layer that forms, with semiconductor layer, a surface Plasmon resonator so as to concentrate the incident electromagnetic radiation on metallic structure in the field concentration zones of semiconductor layer. Semiconductor zones for collecting charge carriers that are oppositely doped to the doping of semiconductor layer are formed in said semiconductor layer and have a topology that complements that of the field concentration zones.

Abstract: This photodetector comprises a doped semiconductor layer; a reflective layer located underneath semiconductor layer; a metallic structure placed on semiconductor layer that forms, with semiconductor layer, a surface plasmon resonator, a plurality of semiconductor zones formed in semiconductor layer and oppositely doped to the doping of the semiconductor layer; and for each semiconductor zone, a conductor that passes through the photodetector from reflective layer to at least semiconductor zone and is electrically insulated from metallic structure, with semiconductor zone associated with corresponding conductor thus determining an elementary detection surface of the photodetector.

Abstract: This photodetector comprises a doped semiconductor layer; a reflective layer located underneath semiconductor layer; a metallic structure placed on semiconductor layer that forms, with semiconductor layer, a surface plasmon resonator, a plurality of semiconductor zones formed in semiconductor layer and oppositely doped to the doping of the semiconductor layer; and for each semiconductor zone, a conductor that passes through the photodetector from reflective layer to at least semiconductor zone and is electrically insulated from metallic structure, with semiconductor zone associated with corresponding conductor thus determining an elementary detection surface of the photodetector.

Abstract: This photodetector capable of detecting electromagnetic radiation comprises: a doped semiconductor absorption layer for said radiation, capable of converting said radiation into charge carriers; a reflective layer that reflects the incident radiation that is not absorbed by semiconductor layer towards the latter, located underneath semiconductor layer; and a metallic structure placed on semiconductor layer that forms, with semiconductor layer, a surface Plasmon resonator so as to concentrate the incident electromagnetic radiation on metallic structure in the field concentration zones of semiconductor layer. Semiconductor zones for collecting charge carriers that are oppositely doped to the doping of semiconductor layer are formed in said semiconductor layer and have a topology that complements that of the field concentration zones.

Abstract: A two-dimensional photonic radiation detector based on a technique of hybridizing a detection chip onto a read chip through a micro-balls network making the electrical and mechanical inter-connection between two chips, the detection chip being composed of a two-dimensional structure of ixj pixels, an active layer (41) being epitaxed onto a substrate (40), each elementary photosensitive component consisting of an N/P or P/N diode formed in the active layer (41), the contact point on the N or P area being made at each pixel, the contact point on the other P or N area being common to all diodes, in which the detector includes a wide gap optically and electrically transparent intermediate layer (42) located between the active layer (41) and the substrate (40).

Abstract: A multicolor radiation detector capable of detecting at least two incident radiations with two distinct wave lengths .lambda.i1 and .lambda.s1 where wave length .lambda.s1 is greater than wave length .lambda.i1. The multicolor radiation detector includes two detection components. The first detection component is configured to detect at least the radiation with wave length .lambda.i1 and to be transparent to at least to the radiation of wave length .lambda.s1. The first detection component includes a matrix of detection pixels of n1 rows and m1 columns and a matrix of reading pixels of n1 rows and m1 columns wherein the reading pixels are transparent to the radiation with wave length .lambda.s1 in at least one portion of each pixel. The second detection component is configured to detect at least the radiation with wave length .lambda.s1. The second detection component includes a matrix of detection pixels of n2 rows and m2 columns and a matrix of reading pixels of n2 rows and m2 columns.

Abstract: Process for the hybridization and positioning of an optoelectronic component on a substrate and application of this process to the positioning of a laser diode with respect to an optical guide.