Abstract: A flash memory device can include a local row decoder circuit that is configured to drive word lines coupled to a bank of a flash memory responsive to separate read and write control signals provided thereto from outside the local row decoder circuit. Multiple local row decoder circuits can, therefore, be controlled by a single global row decoder circuit that provides the separate read and write control signals to each of the local row decoder circuits. By locating the combinatorial logic circuits used for decoding addresses in the global row decoder circuit, rather than in the local row decoder circuits, the local row decoder circuits may have reduced size, thereby allowing further reductions in the size of the flash memory device. For example, in some embodiments according to the invention, a NAND logic circuit used for address decoding is located in the global row decoder circuit, thereby allowing the area allocated to the local row decoder circuit to be reduced.

Abstract: A transmission circuit that conducts signals between integrated circuit devices includes a first driver circuit that generates a first transmit signal in response to first and second input signals, the first transmit signal being transmitted from the integrated circuit device. A first conductive line is electrically coupled to the first driver circuit and conducts the first transmit signal. A second driver circuit generates a second transmit signal in response to the first transmit signal and a third input signal, the second transmit signal being transmitted from the integrated circuit device. A second conductive line is electrically coupled to the second driver circuit and conducts the second transmit data signal. Related methods are also disclosed.

Abstract: A transmission circuit that conducts signals between integrated circuit devices includes a first driver circuit that generates a first transmit signal in response to first and second input signals, the first transmit signal being transmitted from the integrated circuit device. A first conductive line is electrically coupled to the first driver circuit and conducts the first transmit signal. A second driver circuit generates a second transmit signal in response to the first transmit signal and a third input signal, the second transmit signal being transmitted from the integrated circuit device. A second conductive line is electrically coupled to the second driver circuit and conducts the second transmit data signal. Related methods are also disclosed.

Abstract: A flash memory device can include a local row decoder circuit that is configured to drive word lines coupled to a bank of a flash memory responsive to separate read and write control signals provided thereto from outside the local row decoder circuit. Multiple local row decoder circuits can, therefore, be controlled by a single global row decoder circuit that provides the separate read and write control signals to each of the local row decoder circuits. By locating the combinatorial logic circuits used for decoding addresses in the global row decoder circuit, rather than in the local row decoder circuits, the local row decoder circuits may have reduced size, thereby allowing further reductions in the size of the flash memory device. For example, in some embodiments according to the invention, a NAND logic circuit used for address decoding is located in the global row decoder circuit, thereby allowing the area allocated to the local row decoder circuit to be reduced.

Abstract: A transmission circuit that conducts signals between integrated circuit devices includes a first driver circuit that generates a first transmit signal in response to first and second input signals, the first transmit signal being transmitted from the integrated circuit device. A first conductive line is electrically coupled to the first driver circuit and conducts the first transmit signal. A second driver circuit generates a second transmit signal in response to the first transmit signal and a third input signal, the second transmit signal being transmitted from the integrated circuit device. A second conductive line is electrically coupled to the second driver circuit and conducts the second transmit data signal. Related methods are also disclosed.

Abstract: Disclosed is a synchronous semiconductor memory device for prevent signals on activated and inactivated column selection lines from being overlapped, which comprises a memory cell array having at least two banks each divided into a plurality of blocks, each of the blocks having a plurality of memory cells arranged in form of matrix of a plurality of rows and columns; a timing register for generating an internal clock signal synchronized with an external clock signal; a column predecoder for decoding a column address for addressing one of the columns to generate a first address as block selection-information and a second address as column selection-information; a column decoder for selecting one of columns within block relevant to the first address in response to the second address synchronized with the Nth cycle (N is an integer) of the internal clock signal after disabling an addressed column at the (N-1)th cycle of the internal clock signal in response to a predetermined column disable signal; and a column

Abstract: An internal power supply generating circuit for a semiconductor memory device reduces fluctuations in the external power supply by reducing the rate at which a drive transistor is turned on and off. The circuit includes a drive transistor that generates an internal power signal by reducing the external power supply voltage responsive to a bias signal. A feedback loop generates the bias signal and slows down the rate at which the bias signal changes, thereby reducing the rate at which the drive transistor turns on and off. The feedback loop includes a comparator for comparing the internal power supply voltage to a reference voltage and a bias circuit having a pair of push-pull transistors for generating the bias signal responsive to the output of the comparator. To slow down the rate at which the bias signal changes, the bias circuit includes a resistor coupled in series with the transistors and/or a capacitor couple to the output terminal of the bias circuit.

Abstract: A mode setting circuit for generating a mode setting signal for selecting a particular operational mode in response to an input signal from a mode setting pad. The mode setting circuit includes a driver circuit for generating a mode setting signal in response to an input voltage of a mode setting pad, a first pull-down transistor for discharging a voltage at the mode setting pad, and a second pull-down transistor for discharging the voltage at the mode setting pad in response to a signal from the driver circuit. Such mode setting circuit can prevent a misoperation which may occasionally be caused by ground noises when the mode setting pad is not coupled to the supply voltage terminal. Thus, the reliability of the manufactured goods will be increased.