Abstract: The present invention relates to a backlight image sensor chip having improved chip driving performance, in which a region other than a pad region, on which a conductive pad is formed, and a sensing region, on which an optical filter is formed, is used as a region for auxiliary driving so that additional functions such as auxiliary power supply, auxiliary signal transmission and auxiliary operation control can be performed, without additional process, in the backlight image sensor chip having a restricted area, thereby improving the chip driving performance.

Abstract: A semiconductor apparatus having a heat dissipating function and electronic equipment comprising the same includes a front surface on which semiconductor devices constituting a circuit a circuit are formed; and a rear surface including a convexo-concave surface. Thus, the heat dissipation effect of the semiconductor apparatus can be maximized even without attaching a heat dissipation plate thereto.

Abstract: The present invention relates to a backlight image sensor chip having improved chip driving performance, in which a region other than a pad region, on which a conductive pad is formed, and a sensing region, on which an optical filter is formed, is used as a region for auxiliary driving so that additional functions such as auxiliary power supply, auxiliary signal transmission and auxiliary operation control can be performed, without additional process, in the backlight image sensor chip having a restricted area, thereby improving the chip driving performance.

Abstract: A method for designing a mask is disclosed. A chip region can be defined and reduced to form a parent dummy pattern. A mesh dummy pattern can be formed, and portions where the parent dummy pattern and the mesh dummy pattern overlap each other can be removed to form offspring dummy patterns.

Abstract: Provided are a mask layout method and a semiconductor device and a method for fabricating the same. The semiconductor device can include a main pattern, a first dummy pattern, and a second dummy pattern. The main pattern can be disposed on a substrate. The first dummy pattern and the second dummy pattern can be disposed around a side of the main pattern. The first dummy pattern can have an inner open region. The second dummy pattern can be disposed on the inner open region of the first dummy pattern, such that the first dummy pattern surrounds the second dummy pattern.

Abstract: A layout method for a mask can include forming a main pattern on a substrate; and forming a plurality of dummy patterns, each having a same size as another, in regions other than the region in which the main pattern is formed. According to an embodiment, the forming of the plurality of dummy patterns includes forming a plurality of mother dummy patterns separated from each other by a second spacing on the substrate; forming a plurality of child dummy patterns by dividing the plurality of mother dummy patterns into child dummy patterns; and removing the child dummy patterns interacting with the main pattern.

Abstract: A layout method for a mask can include forming a cell including a first main pattern. A second main pattern can be formed in a main chip layout, and the cell can be inserted into the main chip layout. A dummy pattern inhibiting region can be created on the basis of the first main pattern and the second main pattern. Then, plural dummy patterns having a single common shape can be formed over the entire main chip layout into which the cell is inserted. Dummy patterns that overlap with the dummy pattern inhibiting region can be removed.

Abstract: A method of forming a mask pattern from a design pattern. A method may effectively compensate for pattern distortion resulting from an optical proximity effect (OPE). A method may obtain a precise line width. A method includes a first mask design processing and a second mask design processing.

Abstract: A semiconductor device and a method for manufacturing the same. The method includes setting a pattern region, forming a series of virtual mesh lines on the pattern region, forming a plurality of patterns in the pattern region, and substituting each of the patterns with either a red (R), green (G), or blue (B) patterns in accordance with a contact rule between the virtual mesh lines. Accordingly, it is possible to enhance the pattern uniformity between a main pattern region and a dummy pattern region, and thus to secure a uniform critical dimension (CD) of each pattern. Also, the patterning process for the color filter can be automatized to minimize the amount of data required to design a pattern. Also, the designing and manufacturing processes can be simplified, meaning that they can be more rapidly and precisely achieved.

Abstract: A semiconductor device and a method for manufacturing the same. The semiconductor device includes a first main pattern formed on a substrate and a first dummy pattern formed in a parallel direction to a first main pattern on a layer on which the first main pattern is formed. Additional dummy patterns can be inserted and pattern density can be increased by the insertion of the dummy pattern in consideration of the shape and direction of the main pattern per the metal layer.

Abstract: A mask layout method, semiconductor device and method for fabricating the same using a mask created according to the subject mask layout method are provided. The semiconductor device can include a microlens main pattern on a substrate and a microlens dummy pattern at a side of the microlens main pattern. The microlens dummy pattern can be formed in plurality using a mask created by the subject mask layout method. According to an embodiment of the subject mask layout method, a microlens dummy pattern can be created by forming a base dummy pattern and removing edge areas from the base dummy pattern. The microlens dummy pattern can be created to have a substantially circular shape. In one embodiment, the substantially circular shape can be an octagon.

Abstract: Overlapping dummy patterns for a semiconductor device are disclosed. According to an embodiment, a first dummy pattern is formed on a substrate; a second dummy pattern is formed to be overlapped with the first dummy pattern; and a third dummy pattern is formed to provide an electrical connection between the first dummy pattern and the second dummy pattern.

Abstract: Provided are a mask layout method and a semiconductor device and a method for fabricating the same. The semiconductor device can include a main pattern, a first dummy pattern, and a second dummy pattern. The main pattern can be disposed on a substrate. The first dummy pattern and the second dummy pattern can be disposed around a side of the main pattern. The first dummy pattern can have an inner open region. The second dummy pattern can be disposed on the inner open region of the first dummy pattern, such that the first dummy pattern surrounds the second dummy pattern.

Abstract: A method for designing a mask is disclosed. A chip region can be defined and reduced to form a parent dummy pattern. A mesh dummy pattern can be formed, and portions where the parent dummy pattern and the mesh dummy pattern overlap each other can be removed to form offspring dummy patterns.

Abstract: A layout method for a mask can include creating dummy pattern inhibiting regions and a single dummy pattern type for a layer. A cell can be formed in which a first main pattern is formed. A second main pattern can be formed in a main chip layout, and the cell can be inserted into the main chip. A dummy pattern inhibiting region can be created on the basis of the first main pattern and the second main pattern. Then, a single dummy pattern type can be formed over the entire main chip layout. Dummy patterns that interact with the dummy pattern inhibiting region can be removed.

Abstract: A layout method for a mask can include creating dummy pattern inhibiting regions and a single dummy pattern type for a layer. A cell can be formed in which a first main pattern is formed. A second main pattern can be formed in a main chip layout, and the cell can be inserted into the main chip. A dummy pattern inhibiting region can be created on the basis of the first main pattern and the second main pattern. Then, a single dummy pattern type can be formed over the entire main chip layout. Dummy patterns that interact with the dummy pattern inhibiting region can be removed.

Abstract: A semiconductor device according to an embodiment can include a first group of dummy patterns and a second group of dummy patterns spaced apart from the first group of dummy patterns by a second spacing. The first group of dummy patterns can include a plurality of first dummy patterns formed separated from each other by a first spacing. The second group of dummy patterns can include a plurality of second dummy patterns formed separated from each other by the first spacing. The first dummy patterns and the second dummy patterns can have the same shape and size.