Abstract: One embodiment relates to an apparatus for virtual grounding of a target substrate in a charged-particle beam apparatus. A primary gun generates charged particles for a process beam that is focused on a frontside surface of the target substrate, and the target substrate is held by a stage. An electrostatic voltmeter measures a voltage potential of the target substrate, and a charge-control gun impinges a beam of charged particles to the target substrate. A feedback control loop is used to control the flood gun depending on the voltage potential measured by the electrostatic voltmeter. Other embodiments, aspects and features are also disclosed.

Abstract: One embodiment relates to a charged-particle energy analyzer apparatus. A first mesh is arranged to receive the charged particles on a first side and pass the charged particles to a second side, and a first electrode is arranged such that a first cavity is formed between the second side of the first mesh and the first electrode. A second mesh is arranged to receive the charged particles on a second side and pass the charged particles to a first side, and a second electrode is arranged such that a second cavity is formed between the first side of the second mesh and the second electrode. Finally, a third mesh is arranged to receive the charged particles on a first side and pass the charged particles to a second side, and a position-sensitive charged-particle detector is arranged to receive the charged particles after the charged particles pass through the third mesh.

Abstract: One embodiment relates to a charged-particle energy analyzer apparatus. A first mesh is arranged to receive the charged particles on a first side and pass the charged particles to a second side, and a first electrode is arranged such that a first cavity is formed between the second side of the first mesh and the first electrode. A second mesh is arranged to receive the charged particles on a second side and pass the charged particles to a first side, and a second electrode is arranged such that a second cavity is formed between the first side of the second mesh and the second electrode. Finally, a third mesh is arranged to receive the charged particles on a first side and pass the charged particles to a second side, and a position-sensitive charged-particle detector is arranged to receive the charged particles after the charged particles pass through the third mesh.

Abstract: One embodiment pertains to a method for reviewing a potential defect on a substrate from one electron image. An image of an area containing the potential defect is obtained using a charged-particle apparatus. At least three image segments within the image are determined. The three segments are transformably identical to each other, and one of said three segments includes the potential defect. Another embodiment pertains to a method for reviewing a potential defect on a substrate by obtaining an electron-beam image of a relatively large field of view containing a first image segment. The first image segment is substantially smaller than the field of view and includes a location of the potential defect. A comparison image segment within the field of view is determined. The comparison image segment is transformably identical to the first image segment. Other embodiments and features are also disclosed.

Abstract: A scanning electron beam apparatus with an Auger spectrometer. The apparatus includes at least an electron column for generating a primary electron beam, a magnetic objective lens configured to focus the primary electron beam onto a surface of a target substrate, and a spectrometer configured to detect Auger electrons emitted from the surface of the target substrate. The magnetic objective lens applies a magnetic field strength greater than 10 Gauss and less than 50 Gauss at the surface of the target substrate. Other embodiments, aspects and features are also disclosed.

Abstract: One embodiment pertains to a method for reviewing a potential defect on a substrate from one electron image. An image of an area containing the potential defect is obtained using a charged-particle apparatus. At least three image segments within the image are determined. The three segments are transformably identical to each other, and one of said three segments includes the potential defect. Another embodiment pertains to a method for reviewing a potential defect on a substrate by obtaining an electron-beam image of a relatively large field of view containing a first image segment. The first image segment is substantially smaller than the field of view and includes a location of the potential defect. A comparison image segment within the field of view is determined. The comparison image segment is transformably identical to the first image segment. Other embodiments and features are also disclosed.

Abstract: One embodiment disclosed relates to a method for automated focusing of an electron image. An EF cut-off voltage is determined. In compensation for a change in the EF cut-off voltage, a focusing condition is adjusted. Adjusting the focusing condition may comprise, for example, adjusting a wafer bias voltage in correspondence to the change in cut-off voltage. Another embodiment disclosed relates to a method for automated focusing of an electron image in a scanning electron imaging apparatus. A focusing condition of a primary electron beam in a first image plane is varied so as to maximize an intensity of a secondary electron beam through an aperture in a second image plane.

Abstract: One embodiment disclosed relates to a Wien filter for a charged-particle beam apparatus. The charged-particle beam is transmitted through the Wien filter in a first direction. A magnetic field generation mechanism is configured to generate a magnetic field in a second direction which is perpendicular to the first direction, and an electrostatic field generation mechanism is configured to generate an electrostatic field in a third direction which is perpendicular to the first and second directions. The field generation mechanisms are further configured so as to have an offset between the positions of the magnetic and electrostatic fields along the first direction. Another embodiment disclosed relates to a Wien filter type device wherein the magnetic force is approximately twice in strength compared to the electrostatic force. Other embodiments are also disclosed.

Abstract: One embodiment disclosed relates to a scanning electron beam apparatus including an objective lens, scan deflectors, de-scan deflectors, an energy-filter drift tube, and a segmented detector. The objective lens may be an immersion lens configured with a high extraction field so as to preserve azimuthal angle discrimination of the electrons scattered from the specimen surface. The de-scan deflectors may be used to compensate for the scanning of the incident electron beam. The energy-filter drift tube is configured to align the scattered electrons according to polar angles of trajectory from the specimen surface.

Abstract: One embodiment disclosed relates to a method for automated focusing of an electron image. An EF cut-off voltage is determined. In compensation for a change in the EF cut-off voltage, a focusing condition is adjusted. Adjusting the focusing condition may comprise, for example, adjusting a wafer bias voltage in correspondence to the change in cut-off voltage. Another embodiment disclosed relates to a method for automated focusing of an electron image in a scanning electron imaging apparatus. A focusing condition of a primary electron beam in a first image plane is varied so as to maximize an intensity of a secondary electron beam through an aperture in a second image plane.

Abstract: Methods and apparatus for efficiently analyzing defects in-line on a wafer by wafer basis are provided. In general terms, embodiments of the present invention provide a simple interface for setting up the entire inspection and defect analysis process in a single set up procedure. The apparatus includes an inspection station for inspecting a specimen for potential defects and a review station for analyzing a sample of the potential defects to determine a classification of such potential defects. The apparatus further includes a computer system having an application interface operable to allow a user to set up the inspection station and the review station during a same setup phase so as to allow the inspection station and the review station to then operate automatically to provide defect information for one or more specimens based on the user set up.

Abstract: One embodiment disclosed relates to a method of setting a surface charge of an area on a substrate to a desired level. The substrate is held on a stage, and a stage bias voltage applied to the stage is controlled. A flood of electrons is directed to the area. The stage bias voltage is controlled such that the surface charge of the area reaches an equilibrium at the desired level. Another embodiment disclosed relates to a method of auto-focusing a main electron beam incident upon an imaging area of a substrate. A monitor electron beam is generated and directed towards a monitoring area of the substrate at a non-perpendicular incidence angle. An in-focus band in data collected from the monitor beam is detected. The focal length of an objective lens focusing the main beam is adjusted based upon a position of the in-focus band.

Abstract: Method and apparatus for imaging at multiple perspectives of a specimen are disclosed. In one embodiment, an apparatus for generating a multi-perspective image using multiple charged particle beams (e.g., electron beams) is disclosed. In one embodiment, the apparatus generally includes a charged particle beam generator system arranged to generate and control a first charged particle beam directed substantially at a first angle towards the specimen and a second charged particle beam directed substantially at a second angle towards the specimen. The apparatus also includes an image generator arranged to generate one or more images based on charged particles emitted from the specimen in response to the first and second charged particle beams and a controller arranged to cause the charged particle beam generator to direct both the first charged particle beam and the second charged particle beam at a first area of the specimen.

Abstract: The disclosure relates to filtered e-beam inspection and review. One embodiment pertains to the filtered inspection or review of a specimen with a high aspect ratio feature. Advantageously, the energy and/or angular filtering improves the information retrievable relating to the high aspect ratio feature on the specimen. Another embodiment pertains to a method for energy-filtered electron beam inspection where a band-pass energy filtered image data is generated by determining the difference between a first high-pass energy-filtered image data set and a second high-pass energy-filtered image data set.