Patents by Inventor Gal Bruner

Gal Bruner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Analyzing a buried layer of a sample
    Patent number: 11598633
    Abstract: Analyzing a buried layer on a sample includes milling a spot on the sample using a charged particle beam of a focused ion beam (FIB) column to expose the buried layer along a sidewall of the spot. From a first perspective a first distance is measured between a first point on the sidewall corresponding to an upper surface of the buried layer and a second point on the sidewall corresponding to a lower surface of the buried layer. From a second perspective a second distance is measured between the first point on the sidewall corresponding to the upper surface of the buried layer and the second point on the sidewall corresponding to the lower surface of the buried layer. A thickness of the buried layer is determined using the first distance and the second distance.
    Type: Grant
    Filed: July 19, 2021
    Date of Patent: March 7, 2023
    Assignee: Applied Materials Israel Ltd.
    Inventors: Alexander Mairov, Gal Bruner, Yehuda Zur
  • ANALYZING A BURIED LAYER OF A SAMPLE
    Publication number: 20230019567
    Abstract: Analyzing a buried layer on a sample includes milling a spot on the sample using a charged particle beam of a focused ion beam (FIB) column to expose the buried layer along a sidewall of the spot. From a first perspective a first distance is measured between a first point on the sidewall corresponding to an upper surface of the buried layer and a second point on the sidewall corresponding to a lower surface of the buried layer. From a second perspective a second distance is measured between the first point on the sidewall corresponding to the upper surface of the buried layer and the second point on the sidewall corresponding to the lower surface of the buried layer. A thickness of the buried layer is determined using the first distance and the second distance.
    Type: Application
    Filed: July 19, 2021
    Publication date: January 19, 2023
    Applicant: Applied Materials Israel Ltd.
    Inventors: Alexander Mairov, Gal Bruner, Yehuda Zur
  • Adaptive geometry for optimal focused ion beam etching
    Patent number: 11315754
    Abstract: A method of evaluating a region of a sample that includes alternating layers of different material. The method includes milling, with a focused ion beam, a portion of the sample that includes the alternating layers of different material; reducing the milling area; and repeating the milling and reducing steps multiple times during the delayering process until the process is complete.
    Type: Grant
    Filed: April 27, 2020
    Date of Patent: April 26, 2022
    Assignee: APPLIED MATERIALS ISRAEL LTD.
    Inventors: Ilya Blayvas, Gal Bruner, Yehuda Zur, Alexander Mairov, Ron Davidescu, Kfir Dotan, Alon Litman
  • ADAPTIVE GEOMETRY FOR OPTIMAL FOCUSED ION BEAM ETCHING
    Publication number: 20210335571
    Abstract: A method of evaluating a region of a sample that includes alternating layers of different material. The method includes milling, with a focused ion beam, a portion of the sample that includes the alternating layers of different material; reducing the milling area; and repeating the milling and reducing steps multiple times during the delayering process until the process is complete.
    Type: Application
    Filed: April 27, 2020
    Publication date: October 28, 2021
    Applicant: APPLIED MATERIALS ISRAEL LTD.
    Inventors: Ilya Blayvas, Gal Bruner, Yehuda Zur, Alexander Mairov, Ron Davidescu, Kfir Dotan, Alon Litman