Patents by Inventor Gang Xue
Gang Xue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8987092Abstract: Methods for fabricating a FIN structure with a semicircular top surface and rounded top surface corners and edges are disclosed. As a part of a disclosed method, a FIN structure is formed in a semiconductor substrate. The FIN structure includes a top surface having corners and edges. The FIN structure is annealed where the annealing causes the top surface to have a semicircular shape and the top surface corners and edges to be rounded.Type: GrantFiled: April 28, 2008Date of Patent: March 24, 2015Assignee: Spansion LLCInventors: Inkuk Kang, Gang Xue, Shenqing Fang, Rinji Sugino, Yi Ma
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Patent number: 8947546Abstract: An apparatus, and an associated method, for facilitating stabilization of a recorded video sequence, formed of captured image frames. Captured image frames are cropped by a frame cropper. Cropping of an image is dependent upon lighting conditions. Upon the occurrence of a low-light, lighting condition, the amount of cropping is altered. And, when acceptable lighting conditions return, the amount of cropping is again altered, all in a manner to facilitate video stabilization.Type: GrantFiled: March 5, 2012Date of Patent: February 3, 2015Assignee: BlackBerry LimitedInventors: Brett Stuart Foster, Bryan Andrew Krawetz, Mark David Rushby, Gael Jaffrain, Sung Ho Hong, Joshua Lucien Daigle, Gang Xue
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Patent number: 8790530Abstract: A method and manufacture for charge storage layer separation is provided. A layer, such as a polymer layer, is deposited on top of an ONO layer so that the polymer layer is planarized, or approximately planarized. The ONO includes at least a first region and a second region, where the first region is higher than the second region. For example, the first region may be the portion of the ONO that is over the source/drain region, and the second region may be the portion of the ONO that is over the shallow trench. Etching is performed on the polymer layer to expose the first region of the ONO layer, leaving the second region of the ONO unexposed. The etching continues to occur to etch the exposed ONO at the first region so that the ONO layer is etched away in the first region and the second region remains unexposed.Type: GrantFiled: February 10, 2010Date of Patent: July 29, 2014Assignee: Spansion LLCInventors: Angela T. Hui, Gang Xue
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Patent number: 8742496Abstract: Methods for forming a memory cell are disclosed. A method includes forming a source-drain structure in a semiconductor substrate where the source-drain structure includes a rounded top surface and sidewall surfaces. An oxide layer is formed on the top and sidewall surfaces of the source-drain structure. The thickness of the portion of the oxide layer that is formed on the top surface of the source-drain structure is greater than the thickness of the portion of the oxide layer that is formed on the sidewall surfaces of the source-drain structure.Type: GrantFiled: June 17, 2013Date of Patent: June 3, 2014Assignee: Spansion LLCInventors: Shenqing Fang, Gang Xue, Wenmei Li, Inkuk Kang
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Patent number: 8692900Abstract: An apparatus, and an associated method, facilitates capturing an image in an electronic camera without having to wait for an image to settle or the camera to stabilize. Image frames are captured continuously. Data representing captured images is compressed. The compressed files are stored continuously, such that even before a shutter button is actuated, one or compressed image frames have already been recorded. When the shutter button is actuated, the largest of the compressed data files is selected for use, such as display, printing or transmission. Selection is made based on the size of the compressed image file.Type: GrantFiled: April 22, 2011Date of Patent: April 8, 2014Assignee: BlackBerry LimitedInventors: Dmitry Denisenkov, Gang Xue, Sung Ho Hong, Qian Wang
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Publication number: 20140060750Abstract: A peeling apparatus for peeling labels in rows from a tape-shaped release paper comprises a main body, a peeling mechanism, a driving mechanism and a sensing mechanism. The peeling mechanism locates the release paper and peels the labels in a row from the release paper when being rotating. The sensing mechanism located upon the peeling mechanism and parallel with the peeling mechanism. The labels in a row are orderly arranged from a first position to a second position on the release paper. The sensing mechanism comprises at least two detectors which are perpendicular to the peeling mechanism. When the peeled labels facing the sensing mechanism, either of the at least two detectors detects the peeled labels at the first position or the second position to generate a pause signal. The driving mechanism stops driving the peeling mechanism rotating in response to the pause signal.Type: ApplicationFiled: April 16, 2013Publication date: March 6, 2014Applicants: HON HAI PRECISION INDUSTRY CO., LTD., HONG FU JIN PRECISION INDUSTRY (ShenZhen) CO., LTDInventors: ZHAO-YONG LI, LIAN-GANG XUE
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Publication number: 20140060752Abstract: A peeling apparatus for peeling labels from a tape-shaped release paper comprises a main body, a peeling mechanism and a driving mechanism. The release paper comprises a free end without labels. The label comprises an information surface and an adhesive surface opposite to the information surface. The peeling mechanism comprises a first roller, a second roller above the first roller, and a peeling member. The main body comprises a first cantilever. The first roller sleeved on the first cantilever fixes the release paper. The second roller fixes the free end. When being rotating by the driving mechanism, the release paper moves along a first direction and turns to move along a second direction after passing the peeling mechanism. The first direction forms an angle with the second direction. Each of the labels is partly peeled from the release paper by the peeling member and the adhesive surface is upward.Type: ApplicationFiled: April 16, 2013Publication date: March 6, 2014Applicants: HON HAI PRECISION INDUSTRY CO., LTD., HONG FU JIN PRECISION INDUSTRY (ShenZhen) CO., LTDInventors: ZHAO-YONG LI, LIAN-GANG XUE
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Patent number: 8660594Abstract: The disclosure discloses a method for shielding a short message receiving function. The method includes the following steps of: storing parameters related to short-message-receiving-function-shielding in an Element File (EF) in a Subscriber Identity Model (SIM) card; performing inter-verification by utilizing the EF in the SIM-card and a Non Volatile (NV) random access memory in a data card to determine whether the SIM-card is applied to the data card; and when the SIM-card is determined to be applied to the data card, reporting the parameters related to short-message-receiving-function-shielding to a network during the process of attaching mobile terminal to the network. Compared with the conventional art, the technical solution of the disclosure can shield the short message receiving function without generating short message fee, so as to enhance the stability of the data service to a large extent and increase the flexibility for a subscriber in selecting the service type at the terminal.Type: GrantFiled: September 25, 2010Date of Patent: February 25, 2014Assignee: ZTE CorporationInventors: Yi Zhang, Gang Xue
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Patent number: 8637918Abstract: A memory and method of manufacture employing word line scaling. A layered stack, including a charge trapping component and a core polysilicon layer, is formed on a core section and a peripheral section of a substrate. A portion of the layered stack, including the core polysilicon layer is then removed from the peripheral section. A peripheral polysilicon layer, which is thicker than the core polysilicon layer of the layered stack, is next formed on the layered stack and the peripheral section. The layered stack is then isolated from the peripheral polysilicon layer by removing a portion of the peripheral polysilicon layer from the core section, and polysilicon lines are patterned in the isolated layered stack.Type: GrantFiled: November 10, 2011Date of Patent: January 28, 2014Assignee: Spansion LLCInventors: Shenqing Fang, Chun Chen, Wenmei Li, Inkuk Kang, Gang Xue, Hyesook Hong
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Publication number: 20140017055Abstract: An electronic apparatus for replacing materials for a device is mounted on a base. The electronic apparatus comprises an installing mechanism and a controlling mechanism for controlling the operations of the installing mechanism. The controlling mechanism can position materials on the device and can remove the materials from the device.Type: ApplicationFiled: March 20, 2013Publication date: January 16, 2014Applicants: HON HAI PRECISION INDUSTRY CO., LTD., HONG FU JIN PRECISION INDUSTRY (ShenZhen) CO., LTD.Inventors: Zhao-Yong LI, Lian-Gang XUE
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Publication number: 20140001537Abstract: A method for fabricating a memory device with U-shaped trap layers over rounded active region corners is disclosed. In the present invention, an STI process is performed before the charge-trapping layer is formed. Immediately after the STI process, the sharp corners of the active regions are exposed, making them available for rounding. Rounding the corners improves the performance characteristics of the memory device. Subsequent to the rounding process, a bottom oxide layer, nitride layer, and sacrificial top oxide layer are formed. An organic bottom antireflective coating applied to the charge trapping layer is planarized. Now the organic bottom antireflective coating, sacrificial top oxide layer, and nitride layer are etched, without etching the sacrificial top oxide layer and nitride layer over the active regions. After the etching the charge trapping layer has a cross-sectional U-shape appearance.Type: ApplicationFiled: September 5, 2013Publication date: January 2, 2014Applicant: Spansion LLCInventors: Shenqing FANG, Angela HUI, Shao-Yu TING, Inkuk KANG, Gang XUE
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Publication number: 20140003903Abstract: A stacking apparatus for stacking packages includes a frame, a stacking station, a first driving mechanism, and a control box. The stacking station is movably mounted to the frame, and has a first top side on which packages are arranged one at a time. The first top side is positioned on a plane. The control box controls the first driving mechanism to lower the stacking station a predetermined distance as each package stacked to make room for other packages, to enable one side of the stacked package away from the first top side to position in the plane.Type: ApplicationFiled: October 25, 2012Publication date: January 2, 2014Inventors: ZHAO-YONG LI, LIAN-GANG XUE
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Publication number: 20130277732Abstract: Methods for forming a memory cell are disclosed. A method includes forming a source-drain structure in a semiconductor substrate where the source-drain structure includes a rounded top surface and sidewall surfaces. An oxide layer is formed on the top and sidewall surfaces of the source-drain structure. The thickness of the portion of the oxide layer that is formed on the top surface of the source-drain structure is greater than the thickness of the portion of the oxide layer that is formed on the sidewall surfaces of the source-drain structure.Type: ApplicationFiled: June 17, 2013Publication date: October 24, 2013Inventors: Shenqing FANG, Gang XUE, Wenmei LI, Inkuk KANG
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Patent number: 8551858Abstract: A method for fabricating a memory device with U-shaped trap layers over rounded active region corners is disclosed. In the present invention, an STI process is performed before the charge-trapping layer is formed. Immediately after the STI process, the sharp corners of the active regions are exposed, making them available for rounding. Rounding the corners improves the performance characteristics of the memory device. Subsequent to the rounding process, a bottom oxide layer, nitride layer, and sacrificial top oxide layer are formed. An organic bottom antireflective coating applied to the charge trapping layer is planarized. Now the organic bottom antireflective coating, sacrificial top oxide layer, and nitride layer are etched, without etching the sacrificial top oxide layer and nitride layer over the active regions. After the etching the charge trapping layer has a cross-sectional U-shape appearance.Type: GrantFiled: February 3, 2010Date of Patent: October 8, 2013Assignee: Spansion LLCInventors: Shenqing Fang, Angela Hui, Shao-Yu Ting, Inkuk Kang, Gang Xue
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Publication number: 20130219505Abstract: The present invention extends to methods, systems, and computer program products for validating license servers in virtualized environments. Embodiments of the invention leverage a set of features acquired or built in cloud computing environments to facilitate a software based solution providing uniqueness and immutability of a license server hosted in the cloud. Avoiding features of the underlying hardware systems results a much more flexible and reliable platform for hosting license servers. Features of a cloud storage service can be used to create a unique ID for a license server. Security and reliability of license servers hosted in a pubic cloud environment is also improved.Type: ApplicationFiled: February 22, 2012Publication date: August 22, 2013Applicant: MICROSOFT CORPORATIONInventors: Gang Xue, Qiufang Shi
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Patent number: 8487373Abstract: Methods for forming a memory cell are disclosed. A method includes forming a source-drain structure in a semiconductor substrate where the source-drain structure includes a rounded top surface and sidewall surfaces. An oxide layer is formed on the top and sidewall surfaces of the source-drain structure. The thickness of the portion of the oxide layer that is formed on the top surface of the source-drain structure is greater than the thickness of the portion of the oxide layer that is formed on the sidewall surfaces of the source-drain structure.Type: GrantFiled: April 29, 2009Date of Patent: July 16, 2013Assignee: Spanion LLCInventors: Shenqing Fang, Gang Xue, Wenmei Li, Inkuk Kang
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Publication number: 20130059612Abstract: The disclosure discloses a method for shielding a short message receiving function. The method includes the following steps of: storing parameters related to short-message-receiving-function-shielding in an Element File (EF) in a Subscriber Identity Model (SIM) card; performing inter-verification by utilizing the EF in the SIM-card and a Non Volatile (NV) random access memory in a data card to determine whether the SIM-card is applied to the data card; and when the SIM-card is determined to be applied to the data card, reporting the parameters related to short-message-receiving-function-shielding to a network during the process of attaching mobile terminal to the network. Compared with the conventional art, the technical solution of the disclosure can shield the short message receiving function without generating short message fee, so as to enhance the stability of the data service to a large extent and increase the flexibility for a subscriber in selecting the service type at the terminal.Type: ApplicationFiled: September 25, 2010Publication date: March 7, 2013Applicant: ZTE CORPORATIONInventors: Yi Zhang, Gang Xue
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Patent number: 8384146Abstract: Methods for fabricating a semiconductor memory cell that has a spacer layer are disclosed. A method includes forming a plurality of source/drain regions in a substrate where the plurality of source/drain regions are formed between trenches, forming a first oxide layer above the plurality of source/drain regions and in the trenches, forming a charge storage layer above the oxide layer and separating the charge storage layer in the trenches where a space is formed between separated portions of the charge storage layer. The method further includes forming a spacer layer to fill the space between the separated portions of the charge storage layer and to rise a predetermined distance above the space. A second oxide layer is formed above the charge storage layer and the spacer layer and a polysilicon layer is formed above the second oxide layer.Type: GrantFiled: March 23, 2012Date of Patent: February 26, 2013Assignee: Spansion LLCInventors: Shenqing Fang, Angela Hui, Gang Xue, Alexander Nickel, Kashmir Sahota, Scott Bell, Chun Chen, Wai Lo
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Publication number: 20120327294Abstract: An apparatus, and an associated method, for a device containing a camera module. An ambient light sensor senses ambient light conditions and provides an indication of the sensed conditions to an exposure setter. The exposure setter utilizes the indication of the ambient light conditions in the selection of the initial exposure. Convergence procedures are utilized to converge the exposure settings to a final exposure setting.Type: ApplicationFiled: June 15, 2012Publication date: December 27, 2012Applicant: RESEARCH IN MOTION LIMITEDInventors: Gael Jaffrain, Gang Xue, Hong Yu Zhou
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Publication number: 20120281106Abstract: An apparatus, and an associated method, for facilitating stabilization of a recorded video sequence, formed of captured image frames. Captured image frames are cropped by a frame cropper. Cropping of an image is dependent upon lighting conditions. Upon the occurrence of a low-light, lighting condition, the amount of cropping is altered. And, when acceptable lighting conditions return, the amount of cropping is again altered, all in a manner to facilitate video stabilization.Type: ApplicationFiled: March 5, 2012Publication date: November 8, 2012Applicant: RESEARCH IN MOTION LIMITEDInventors: Brett Stuart Foster, Bryan Andrew Krawetz, Mark David Rushby, Gael Jaffrain, Sung Ho Hong, Joshua Lucien Daigle, Gang Xue