Abstract: A construction method and an application of an ovarian granulosa cell line of Oncorhynchus mykiss are provided. The construction method includes transferring a single follicle to a complete Minimum Essential Medium (MEM) containing collagenase H for digestion and transferring primary ovarian granulosa cells to 18° C. for constant temperature culture. The disclosure also provides an ovarian granulosa cell line constructed according to the construction method, and the application of the ovarian granulosa cell line in the separation and culture of fish granulosa cells, the molecular regulation mechanism of granulosa cells and the establishment of hormone metabolism cell models. The construction method of the disclosure has strong repeatability and simple operation steps, and after primary culture, the granulosa cells have good growth state and stable physiological state.

Abstract: A production method includes providing field-effect transistors; irradiating the field-effect transistors; applying a current to drains of the field-effect transistors for a duration; and applying a same voltage to gates and sources of the field-effect transistors. The voltage is a grounding voltage or a reverse voltage. The field-effect transistors can be in a reverse biased state in a case of cut-off, and electron-hole pairs can be generated at an insulating oxide layer and at an interface between the insulating oxide layer and a semiconductor substrate.

Abstract: A bidirectional IGBT device, including a cellular structure including: two MOS structures, a substrate drift layer, two highly doped buried layers operating for carrier storage or field stop, two metal electrodes, and isolating dielectrics. Each MOS structure includes: a body region, a heavily doped source region, a body contact region, and a gate structure. Each gate structure includes: a gate dielectric and a gate conductive material. The two MOS structures are symmetrically disposed on the top surface and the back surface of the substrate drift layer. The heavily doped source region and the body contact region are disposed in the body region and independent from each other, and both surfaces of the heavily doped source region and the body contact region are connected to each of the two metal electrodes. The gate dielectric separates the gate conductive material from a channel region of each of the MOS structures.

Abstract: A bidirectional IGBT device, including a cellular structure including: two MOS structures, a substrate drift layer, two highly doped buried layers operating for carrier storage or field stop, two metal electrodes, and isolating dielectrics. Each MOS structure includes: a body region, a heavily doped source region, a body contact region, and a gate structure. Each gate structure includes: a gate dielectric and a gate conductive material. The two MOS structures are symmetrically disposed on the top surface and the back surface of the substrate drift layer. The heavily doped source region and the body contact region are disposed in the body region and independent from each other, and both surfaces of the heavily doped source region and the body contact region are connected to each of the two metal electrodes. The gate dielectric separates the gate conductive material from a channel region of each of the MOS structures.